| 王杰,耿欣,张超.氧化钨基半导体气体传感器的研究进展[J].材料导报,2016,30(1):14-18, 32 |
| 氧化钨基半导体气体传感器的研究进展 |
| Advance in Tungsten Oxide-based Semiconductor Gas Sensors |
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| DOI：10.11896/j.issn.1005-023X.2016.01.003 |
| 中文关键词: 氧化钨 气体传感器 气敏性能 |
| 英文关键词: tungsten oxide, gas sensor, sensing properties |
| 基金项目:国家自然科学基金青年科学基金(51402255);江苏省基础研究计划-青年基金(BK20140487) |
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| 中文摘要: |
| 近年来,氧化钨(WO3)基半导体气体传感器由于可用来检测低浓度二氧化氮、二氧化硫、臭氧和氨气等气体而受到广泛关注。将WO3基材料分为4类:纯WO3材料、氧化物-WO3复合材料、贵金属-WO3复合材料和有机物-WO3复合材料,总结近年来中外文献中WO3基材料对不同气体的响应性能,展现近年来国内外WO3基半导体气体传感器的研究进展。最后根据已有的工作进展,提出合成新型纳米材料、降低工作温度、提高传感器选择性应成为WO3基半导体气体传感器下一阶段的研究重点。 |
| 英文摘要: |
| WO3-based semiconductor gas sensor attracts much attention nowadays. It is widely used for detection of NO2, O3, H2S, NH3, etc. WO3-based semiconductor gas sensors are categorized into four types:pure WO3, composite oxide, noble metal activated metal oxides and polymer-metal oxides. This review presents new advancements in sensing properties of these WO3-based gas sensors. Based on the published results, it is suggested that the development of new nanostructured materials, reduction in working temperature and improvement in selectivity should be emphasized for the future work on WO3-based gas sensors. |
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