Based on the TSMC 180 nm CMOS process, a ground-switched rectifier with negative voltage was designed. The turn-off control level was reduced from 0 to a negative value, which reduced the sub-threshold current of the enable tube or changed the operating state of the enable tube from the sub-threshold region to the cut-off region. As a result, the turn-off power consumption was further reduced. The simulation results showed that, when the rectifier was enabled, the performance of the proposed ground-switched rectifier with negative voltage was almost the same as the performance of the traditional ground-switched rectifier. When the rectifier was turned off and the input voltage amplitude was 1 V, the turn-off power consumption of the proposed ground-switched rectifier was -24.0 dBm @953 MHz, which was 7.5 dBm lower than the traditional ground-switched rectifier, and 23 dBm lower than the traditional short-circuit turn-off rectifier. The power conversion efficiency was increased by 1.9 % at the same time. The results met low power standby requirements for rectifiers in RF energy harvesting systems.