金属热处理 ›› 2020, Vol. 45 ›› Issue (9): 167-171.DOI: 10.13251/j.issn.0254-6051.2020.09.031

• 组织与性能 • 上一篇    下一篇

Hi-B钢二次再结晶退火过程中未异常长大Goss晶粒晶界特征

徐帅, 鲍思前, 柯珊珊, 雷小玲, 卢维娜   

  1. 武汉科技大学 钢铁冶金及资源利用省部共建教育部重点实验室,湖北 武汉 430081
  • 收稿日期:2020-03-29 出版日期:2020-09-25 发布日期:2020-12-29
  • 通讯作者: 鲍思前,副教授,博士,E-mail:baosiqian@163.com
  • 作者简介:徐帅(1993—),男,硕士研究生,主要研究方向为Hi—B钢的组织,E-mail:smart_Qu@qq.com
  • 基金资助:
    国家自然科学基金(51274155)

Grain boundary characteristics of non-abnormal grown Goss grains of Hi-B steel during secondary recrystallization annealing

Xu Shuai, Bao Siqian, Ke Shanshan, Lei Xiaoling, Lu Weina   

  1. Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education,Wuhan University of Science and Technology,Wuhan Hubei 430081,China
  • Received:2020-03-29 Online:2020-09-25 Published:2020-12-29

摘要: 采用中断法并结合电子背散射衍射(EBSD)技术,研究了Hi-B钢二次再结晶退火过程中大量未异常长大Goss取向晶粒的晶界特征。结果表明:未异常长大Goss取向晶粒的晶粒尺寸相较于基体晶粒和相邻晶粒并没有明显的差异性。同时未异常长大Goss取向晶粒与异常长大Goss取向晶粒周围的HE晶界和CSL晶界比例也没有明显的差异。在二次再结晶退火过程中,尺寸优势、HE晶界、CSL晶界和Goss取向偏离度都不能保证Goss取向晶粒发生异常长大。而随着退火温度的升高,Goss取向晶粒有逐渐向标准Goss晶粒取向靠拢的趋势。

关键词: Hi-B钢, 二次再结晶, Goss取向晶粒, 异常长大

Abstract: Grain boundary characteristics of non-abnormal grown Goss grains of Hi-B steel during secondary recrystallization annealing was studied by using interruption method combined with EBSD technique.The results show that the grain size of non-abnormal grown Goss oriented grains is not significantly different from that of matrix grains and adjacent grains.At the same time,the proportion of HE and CSL grain boundaries around the non-abnormal grown Goss grains has no significant difference with those of abnormal grown Goss grains.During the secondary recrystallization annealing,the size superiority,HE and CSL grain boundary,and Goss orientation deviation can't guarantee the abnormal growth of Goss oriented grains.With annealing temperature increasing,the Goss oriented grains tend to be closer to the standard Goss grains.

Key words: Hi-B steel, secondary recrystallization, Goss oriented grains, abnormal growth

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