Dual band infrared detectors are one of the important development directions of the third generation focal plane detectors.Type II superlattice materials are one of the preferred materials for the preparation of dual colour infrared detectors due to their excellent photoelectric properties.In this paper,the research progress in the structure design,material epitaxy,readout circuit design,chip processing and modularization of mid and long wave dual colour Type II superlattice devices are introduced.The 640×512 mid and long wave dual color type II superlattice infrared detector with good performance is produced,the main index is of 20μmpixel center spacing spacing,simultaneous readout,3.5 ～ 4.8 μ m for medium wave band,7.5 ～ 9.5 μ m for long wave band,noise equivalent temperature difference of 28.8 mK for medium wave and 38.8 mK for long wave,and non uniformity of 4.52% for medium wave and 7.89% for long wave in response rate,blind element rate of 1.2% for medium wave and 1.3% for long wave.The imaging demonstration is completed with good imaging quality,laying a foundation for the engineering application of dual color infrared detector.