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中文摘要: 深反应离子刻蚀（DRIE）工艺在目前的硅微机械的高深宽比结构加工中应用十分广泛。在这一加工过程中，存在着一些被认为对刻蚀速率和结构轮廓不利的效应，如横向刻蚀（Notching）效应。本文通过在结构旁布置牺牲结构-硅岛，利用Notching效应加工出以悬空硅作为敏感单元的风速仪，其响应时间常数和电阻温度系数（temperature coefficient of resistant， TCR）分别为1.08μs和4738 ppm/ ℃。正如本文所描述的，对于特定的微机械应用，Notching效应可以转变为一种加工优势，提高了微加工过程中的变化性。
Abstract:Deep reactive ion etching is widely used in modern silicon micro-mechanicalmanufacture with high aspect ratio of etched features. There are some effects that are usually regarded as disadvantages to etching rate and profile shape in the process, such as Notching effect. The paper fabricated suspended silicon sensing element anemometer using Notching effect by placing sacrificial silicon islands near the structure. Typical time constant measured for the sensor was 1.08μs and the Temperature Coefficient of Resistant (TCR) value of the sensing element was measured to be 4738 ppm/oC. For certain micromechanical applications, as described in this paper, Notching effect can be turned into an advantage to improve the variability of the fabrication process.
文章编号：cg12000942 中图分类号： 文献标志码：
基金项目:基于气流转子的六自由度
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