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中文摘要: 微机械（MEMS）工艺和集成电路（IC）工艺中，在硅（Si）片上电铸高深宽比坡莫（NiFe）合金材料常出现脱落现象。本文提出了一种电铸NiFe合金材料的新方法，这种方法制作的合金薄膜厚度达200 时不脱落。此方法即对等离子刻蚀后的硅片溅射种子层铜（Cu），然后对种子层进行电镀，当其厚度达到约15 时，再进行NiFe合金的电铸。本文用扫描电镜、x射线衍射仪和剥离实验研究了薄膜粘附特性。研究结果表明当对种子层电镀后，随着Cu种子层厚度的增加，Cu/NiFe薄膜与基体的粘附强度增加，而薄膜的残余应力降低；同时Cu膜表面粗糙度增加，也增加了NiFe膜与Cu膜的粘附强度。
中文关键词: Si基 Cu/NiFe膜 粘附特性 剥离实验 残余应力
Abstract:In integrated circuit(IC) and micro-electro-mechanical systems(MEMS) technology, it is difficult to electroplate permalloy (NiFe) material with high aspect-ratio on the silicon (Si) substrates. In this paper, a new method was investigated, in which the main process include treating Si surface by ICP(inductively coupled plasma), electroplating copper(Cu) and electroplating permalloy (NiFe) material when the thickness of the Cu film is 15 , finally the 200 films which did not shed from the silicon (Si) was generated. The morphologies of the sputtered copper film and electroplated copper film were observed by scanning electron microscope(SEM), the residual stress in the Cu/NiFe films were analysed by x-ray diffraction(XRD), the adhesive strength of the Cu/NiFe films was measured by peel test. The analysis prove: with the increase of the copper film thickness, the residual stress of Cu/NiFe films decreases, the adhesion strength between Cu/NiFe films and Si wafer increases. At the same time the surface roughness of Cu film increases, consequently the adhesion strength NiFe films and Cu film increases.
文章编号：cg060535 中图分类号： 文献标志码：
基金项目:
ZHANG Tao 1 2 WU Yi-hui1 ZHANG Ping1 WANG Shu-rong1
1.National Key Lab of Applied Optics, Changchun Institute of Optics. Fine mechanics and Physics ,Chinese Academy of Sciences, Changchun 130033 China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039 China
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