Charge‐Trapping‐Induced Non‐Ideal Behaviors in Organic Field‐Effect Transistors |
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| Authors: | Hio‐Ieng Un Peng Cheng Ting Lei Chi‐Yuan Yang Jie‐Yu Wang Jian Pei |
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| Affiliation: | 1. Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Center of Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, China;2. Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing, China;3. Department of Chemical Engineering, Stanford University, Stanford, CA, USA |
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| Abstract: | ![]()
Organic field‐effect transistors (OFETs) with impressively high hole mobilities over 10 cm2 V?1 s?1 and electron mobilities over 1 cm2 V?1 s?1 have been reported in the past few years. However, significant non‐ideal electrical characteristics, e.g., voltage‐dependent mobilities, have been widely observed in both small‐molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor‐unrelated, charge‐trapping‐induced non‐ideality in OFETs is reported, and a revised model for the non‐ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping‐induced non‐ideality exists in OFETs with different types of charge carriers (p‐type or n‐type), different types of dielectric materials (inorganic and organic) that contain different functional groups (? OH, ? NH2, ? COOH, etc.). As fas as it is known, this is the first report for the non‐ideal transport behaviors in OFETs caused by semiconductor‐independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non‐ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs. |
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| Keywords: | charge trapping non‐ideal behavior organic field‐effect transistors scanning Kelvin probe microscopy |
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