| 分子动力学仿真过程中硅晶体位错模型的构建 |
| |
| 引用本文： | 郭晓光,张亮,金洙吉,郭东明.分子动力学仿真过程中硅晶体位错模型的构建[J].中国机械工程,2013,24(17):2285-2289. |
| |
| 作者姓名： | 郭晓光 张亮 金洙吉 郭东明 |
| |
| 作者单位： | 大连理工大学精密与特种加工教育部重点实验室,大连,116021 |
| |
| 基金项目： | 国家自然科学基金资助项目(50905025)
National Natural Science Foundation of China（No. 50905025） |
| |
| 摘 要： | 基于位错形成机理,在单晶硅晶体结构基础上描述了硅晶体位错形成的过程。应用偶极子模型,构建了60°滑移位错芯和螺旋位错芯,进而得到硅晶体含有60°滑移位错的模型和含有螺旋位错的模型。对含有螺旋位错的硅晶体模型进行了分子动力学仿真计算,分析了含有螺旋位错的硅晶体超精密磨削的加工过程,研究了含有螺旋位错缺陷的硅晶体纳米级磨削机理。
|
| 关 键 词： | 分子动力学仿真 滑移位错 螺旋位错 硅晶体 纳米级磨削 |
Building Silicon Crystal Dislocation Models for Molecular Dynamics Simulation |
| |
| Guo Xiaoguang,Zhang Liang,Jin Zhuji,Guo Dongming.Building Silicon Crystal Dislocation Models for Molecular Dynamics Simulation[J].China Mechanical Engineering,2013,24(17):2285-2289. |
| |
| Authors: | Guo Xiaoguang Zhang Liang Jin Zhuji Guo Dongming |
| |
| Affiliation: | Key Laboratory for Precision & Non-traditional Machining of Ministry of Education,Dalian University of Technology,Dalian,Liaoning,116021 |
| |
| Abstract: | According to the dislocation formation mechanism and the silicon crystal structure,the silicon crystal dislocations were analyzed.The slip dislocation and
spiral dislocation models of the silicon crystal were built based on the dipole model
which ensured that the dislocation models satisfied the periodic boundary conditions.
And the silicon spiral dislocation model was introduced into the MD simulation of the silicon grinding.From the MD simulation results, the basic properties and grinding mechanism are obtained. |
| |
| Keywords: | molecular dynamics(MD) simulation slip dislocation screw dislocation monocrystal silicon nanometer grinding |
|
| 点击此处可从《中国机械工程》浏览原始摘要信息 |
|
点击此处可从《中国机械工程》下载全文 |
