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Ink‐Jet Printed CMOS Electronics from Oxide Semiconductors |
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| Authors: | Suresh Kumar Garlapati Tessy Theres Baby Simone Dehm Mohammed Hammad Venkata Sai Kiran Chakravadhanula Robert Kruk Horst Hahn Subho Dasgupta |
| Affiliation: | 1. Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Eggenstein‐Leopoldshafen, Germany;2. KIT‐TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universit?t Darmstadt (TUD), Darmstadt, Germany;3. Helmholtz Institute Ulm for Electrochemical Energy Storage (HIU), Ulm, Germany;4. Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology, Karlsruhe, Germany |
| Abstract: | Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all‐oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution‐processed/printed transistors. As a major step toward solution‐processed all‐oxide electronics, here it is shown that using a highly efficient electrolyte‐gating approach one can obtain printed and low‐voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation. |
| Keywords: | electrolyte gating ink‐jet printing oxide semiconductors printed electronics |
