| p型铸造单晶硅光注入再生后LID与LeTID的机制分析 |
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| 引用本文： | 程尚之,周春兰,王文静.p型铸造单晶硅光注入再生后LID与LeTID的机制分析[J].太阳能学报,2022,43(11):14-19. |
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| 作者姓名： | 程尚之 周春兰 王文静 |
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| 作者单位： | 1.中国科学院电工研究所太阳能光伏与热利用重点实验室,北京 100190; 2.中国科学院大学,北京 100049 |
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| 基金项目： | 国家自然科学基金面上项目（61874120） |
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| 摘 要： | 光致衰减（LID）与热辅助光诱导衰减（LeTID）是晶硅太阳电池的2种主要衰减,其典型光注入条件分别为25 ℃、1 sun（LID环境）和75 ℃、1 sun（LeTID环境）。从有效少子寿命的角度研究p型铸造单晶硅的衰减机制。200 ℃、7 suns光注入处理过程中样品少子寿命先下降后恢复,这一过程称为光注入再生处理。在LID环境下,无光注入再生处理的样品具有快速与慢速2个衰减阶段,光注入再生处理的样品只有快速衰减阶段。计算两组样品带隙中央附近的缺陷电子/空穴俘获截面比k约为7,表明其中缺陷与直拉单晶硅（Cz-Si）中的BO缺陷相同。对光注入再生处理的样品,在LeTID环境下的衰减阶段计算出k约为35,此数值与多晶硅（mc-Si）中LeTID缺陷的一致。
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| 关 键 词： | 光伏 铸造单晶硅 光致衰减 热辅助光诱导衰减 载流子寿命 缺陷 |
| 收稿时间： | 2021-02-22 |
MECHANISM ANALYSIS OF LID AND LETID OF P-TYPE CAST MONO SILICON AFTER LIGHT SOAKING REGENERATION |
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| Cheng Shangzhi,Zhou Chunlan,Wang Wenjing.MECHANISM ANALYSIS OF LID AND LETID OF P-TYPE CAST MONO SILICON AFTER LIGHT SOAKING REGENERATION[J].Acta Energiae Solaris Sinica,2022,43(11):14-19. |
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| Authors: | Cheng Shangzhi Zhou Chunlan Wang Wenjing |
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| Affiliation: | 1. Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Light induced degradation （LID） and light and elevated temperature induced degradation （LeTID） are two main degradations of crystalline silicon solar cells, with typical light soaking conditions of 25 ℃ and 1 sun （LID environment） and 75 ℃ and 1 sun （LeTID environment）, respectively. In this paper, the degradation mechanism of p-type cast mono silicon wafer was studied by the effective minority carrier lifetime. At 200 ℃ and 7 suns, the minority carrier lifetime of the sample decreased first and then recovered. This process was called the light soaking regeneration. In LID environment, the samples without light soaking regeneration had two degradation stages： fast and slow, but the samples with light soaking regeneration only had the fast degradation stage. The electron/hole capture cross-section ratio of the LID defect near the center of the bandgap was calculated to be about 7, indicating that the defect was the same as the BO defect in Czochralski silicon （Cz-Si）. For the samples with light soaking regeneration, the k is calculated to be about 35 at the maximum LeTID stage, indicating that LeTID defect in cast mono silicon is similar with that in multicrystalline silicon （mc-Si）. |
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| Keywords: | photovoltaic cast mono silicon LID LeTID carrier lifetime defects |
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