p‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl1/2Fe1/2O2 |
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| Authors: | Chesta Ruttanapun Phumin Jindajitawat Prathan Buranasiri Adul Harnwunggmoung Anek Charoenphakdee Vittaya Amornkitbamrung |
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| Affiliation: | 1. Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Ladgrabang, Bangkok, Thailand;2. Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon Si Ayutthaya;3. Integrated Nanotechnology Research Center, Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, Thailand |
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| Abstract: | CuAl1/2Fe1/2O2 delafossite was prepared using a solid‐state reaction method to investigate its optical and electronic transport properties. CuAl1/2Fe1/2O2 formed a hexagonal delafossite structure with an R m space group. The positive Seebeck coefficient and the direct optical gap of 3.6 eV confirmed that the CuAl1/2Fe1/2O2 delafossite in a p‐type transparent conducting oxide. The fluorescence emission at 390 nm (green emission) confirmed that CuAl1/2Fe1/2O2 has a direct transition band gap. Thermogravimetric analysis indicated a weight loss of 1.2%, caused by the intercalation of O atoms, which produced hole carriers from the different ionic radii at the B sites. The electric conductivity at room temperature was thermally activated, as predicted by the small‐polaron hopping mechanism, with an activation energy of 75 meV and a charge transport energy of 61 meV. CuAl1/2Fe1/2O2 delafossite exhibited p‐type optoelectronic behavior and is a transparent conducting oxide, which may be crucial in the p‐type photonic and electrode industries. |
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