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| 等离子体刻蚀工艺中的OES监控技术 | |
| 引用本文： | 王巍,兰中文,吴志刚,孙江宏,龚云贵,姬洪,柏杨.等离子体刻蚀工艺中的OES监控技术[J].红外与激光工程,2008,37(2):326-329. |
| 作者姓名： | 王巍 兰中文 吴志刚 孙江宏 龚云贵 姬洪 柏杨 |
| 作者单位： | 1. 重庆邮电大学光电工程学院,重庆,400065 2. 电子科技大学微电子与固体电子学院,四川,成都,610054 3. 北京机械工业学院机械工程系,北京,100085 |
| 基金项目： | 国家自然科学基金 , 重庆邮电大学校科研和教改项目 |
| 摘 要： | 采用光学发射光谱(OES)原位检测技术，对等离子体刻蚀机中的等离子体状态进行实时监控，讨论了其在故障诊断、分类、刻蚀终点的判断及控制方面的应用。实验平台为在新研发的高密度等离子体刻蚀机，采用化学气体HBr/Cl2为刻蚀气体进行多晶硅刻蚀工艺实验，实验过程中所采集的OES数据通过PCA法进行分析，得到与刻蚀过程相关的特征谱线。实验结果表明：OES技术适合于深亚微米等离子体刻蚀工艺过程的终点检测及故障诊断。最后就OES技术未来发展面临的挑战进行了讨论。 |
| 关 键 词： | 等离子体刻蚀 OES 故障诊断 终点检测 |
| 文章编号： | 1007-2276(2008)02-0326-04 |
| 收稿时间： | 2007/6/5 |
| 修稿时间： | 2007年6月5日 |
Application of OES diagnostics on plasma etching |
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| WANG Wei,LAN Zhong-wen,WU Zhi-gang,SUN Jiang-hong,GONG Yun-gui,JI Hong,BAI Yang.Application of OES diagnostics on plasma etching[J].Infrared and Laser Engineering,2008,37(2):326-329. | |
| Authors: | WANG Wei LAN Zhong-wen WU Zhi-gang SUN Jiang-hong GONG Yun-gui JI Hong BAI Yang |
| Affiliation: | 1.College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China; 2.College of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; 3.Institute of Electronic Engineering,University of Electronic Science and Technology of China, Chengdu 610054 China; 4.Department of Mechanical Engineering, Beijing Institute of Machinery, Beijing 100085,China |
| Abstract: | Optical emission spectroscopy (OES), a in situ diagnostic technique, can be used to monitor the state of the plasma in real time. The applications of OES both for fault diagnostics and endpoint detection for ICP silicon plasma etching process were investigated. Based on newly developed high density plasma etcher, poly silicon etching process with etching chemistry HBr/Cl2, the OES data from the plasma etching process wasanalyzed with PCA method, and the chacracteric OES lines which related with the plasma etching were obtained. The challenge of OES technique in the future was also discussed. The results show that the OES technique is a suitable tool for fault diagnostics and endpoint detection in deep sub-micrometer etching process. |
| Keywords: | Plasma etching OES Fault diagnostic Endpoint detection |
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