Roll‐to‐Roll Production of Layer‐Controlled Molybdenum Disulfide: A Platform for 2D Semiconductor‐Based Industrial Applications |
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| Authors: | Yi Rang Lim Jin Kyu Han Seong Ku Kim Young Bum Lee Yeoheung Yoon Seong Jun Kim Bok Ki Min Yooseok Kim Cheolho Jeon Sejeong Won Jae‐Hyun Kim Wooseok Song Sung Myung Sun Sook Lee Ki‐Seok An Jongsun Lim |
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| Affiliation: | 1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, Republic of Korea;2. School of Electrical and Electronic Engineering, Yonsei University, Seodaemun‐gu, Seoul, Republic of Korea;3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea;4. Nano‐Surface Research Group, Korea Basic Science Institute, Daejeon, Republic of Korea;5. Department of Nanomechanics, Nano‐Convergence Mechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Yuseong‐gu, Daejeon, Republic of Korea |
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| Abstract: | A facile methodology for the large‐scale production of layer‐controlled MoS2 layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll‐to‐roll‐based thermal decomposition is developed. The resulting 50 cm long MoS2 layers synthesized on Ni foils possess excellent long‐range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS2 layers by simply adjusting the concentration of (NH4)2MoS4. Additionally, the capability of the MoS2 for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS2‐based field effect transistors exhibit unipolar n‐channel transistor behavior with electron mobility of 0.6 cm2 V?1 s?1 and an on‐off ratio of ≈10³. The MoS2‐based visible‐light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W?1. Moreover, the MoS2 layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec?1. Based on these results, it is envisaged that the cost‐effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor‐based multifaceted applications. |
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| Keywords: | field effect transistors hydrogen evolution reaction MoS2 photodetectors roll‐to‐roll production |
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