| 插入δAl/AlN缓冲层在Si(111)上生长GaN |
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| 作者姓名： | 郭伦春 王晓亮 胡国新 李建平 罗卫军 |
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| 作者单位： | Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China and Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| 摘 要： | 采用MOCVD(metal organic chemical vapor deposition)生方法,对比在AlN层上加入aAI/AIN缓冲层 和不加入aAI/AiN缓冲层两种生长结构,在Si(111)衬底上生长GaN.实验结果表明,在加入8A1/AlN缓冲层后, GaN外延层的裂纹密度得到了有效的降低,晶体质量也得到了明显的提高.通过MOCVD生长方法,利用光学显 微镜、XRD和Raman等分析测试手段,研究了aAI/AIN缓冲层对GaN外延层的影响,获得了裂纹密度小、晶体质 量高的GaN材料.
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| 关 键 词： | GaN MOCVD AlN 缓冲层 |
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