| 利用CH4/H2/Ar及Cl2高密度等离子体对InSb的高速率刻蚀研究（英文） |
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| 引用本文： | 张国栋,司俊杰,王理文.利用CH4/H2/Ar及Cl2高密度等离子体对InSb的高速率刻蚀研究（英文）[J].红外与激光工程,2012,41(4):843-846. |
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| 作者姓名： | 张国栋 司俊杰 王理文 |
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| 作者单位： | 洛阳光电技术发展中心,河南 洛阳,471009 |
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| 摘 要： | 利用感应耦合等离子体(ICP)进行了InSb刻蚀研究。为了实现高的刻蚀速率同时保证光滑的刻蚀表面,研究中在CH4/H2/Ar气氛中引入了Cl2。研究发现,对InSb的刻蚀速率随Cl2含量及ICP功率的升高而线性增加。当Cl2含量增加到超过12%或ICP功率大于900 W时,刻蚀表面变得粗糙,而易引起刻蚀损伤的直流偏压随ICP功率的升高而降低。此现象归因于刻蚀副产物InCl3在样品表面的聚集进而妨碍均匀刻蚀反应所致。当样品温度从20℃提高到120℃,刻蚀速率及表面粗糙度无明显变化。通过试验研究,实现了对InSb的高速率、高垂直度刻蚀,刻蚀速率大于500 nm/min,对SiO2掩模刻蚀选择比大于6,刻蚀表面光洁,刻蚀垂直度可达80°。
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| 关 键 词： | 感应耦合等离子体(ICP) InSb 刻蚀速率 粗糙度 侧壁倾角 |
High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2 |
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| Zhang Guodong
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Si Junjie
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Wang Liwen.High rate etching of InSb in high density plasma of CH4/H2/Ar and Cl2[J].Infrared and Laser Engineering,2012,41(4):843-846. |
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| Authors: | Zhang Guodong Si Junjie Wang Liwen |
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| Affiliation: | (Luoyang Opto-Electro Technology Development Center,Luoyang 471009,China) |
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| Abstract: | A parametric study of the etching of InSb was performed in high density plasma(HDP) using inductively coupled plasma(ICP) system.To obtain high etch rate of InSb with smooth surface,Cl2 gas was introduced to the CH4/H2/Ar gas mixture.The etch rate of InSb increased linearly with the Cl2 content and the ICP power.However,the etched surface became roughened with the Cl2 content exceeding 12% or the ICP power higher than 900 W.The roughened surfaces with higher Cl2 content or higher ICP power were both attributed to the local accumulation of the by-product InCl3 which prohibited the uniform etching.Substrate temperature ranging from 20 ℃ to 120 ℃ had almost no effect on the etch rate and the etched surface roughness.InSb to SiO2 selectivity during the ICP etching was higher than 6 and increased with the ICP power.With ICP etching condition optimized in the investigated range,etch rate of exceeding 500 nm/min with smooth etched surface and sidewall angles of about 80° were obtained. |
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| Keywords: | inductively coupled plasma(ICP) InSb etch rate roughness sidewall angle |
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