| 盖革模式雪崩光电二极管的场效应管淬灭电路设计 |
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| 引用本文： | 施向东,赖晓艳.盖革模式雪崩光电二极管的场效应管淬灭电路设计[J].红外技术,2021,43(1):56-59,78. |
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| 作者姓名： | 施向东 赖晓艳 |
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| 作者单位： | 中国空空导弹研究院，河南 洛阳 471009 |
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| 摘 要： | 雪崩光电二极管（Avalanche Photondiode，APD）是一种常用于激光探测领域的光敏元件。本文针对盖革模式雪崩光电二极管（Geiger Mode-Avalanche Photondiode，Gm-APD）工作时发生的雪崩效应，设计了一种场效应管淬灭电路（Field Effect Transistor Quenching Circuit）。首先，针对Gm-APD器件的特性建立了Gm-APD的电学模型。其次，在此模型的基础上，设计并仿真验证了场效应管淬灭电路，实现了对Gm-APD的快速淬灭。结果表明，本文设计的场效应管淬灭电路淬灭速度快、死时间短、性能较优，淬灭时间和死时间分别为21.026 ns和16.5 ns，满足激光测距成像的应用需求。
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| 关 键 词： | 盖革模式 APD 场效应管淬灭电路 激光测距成像 |
| 收稿时间： | 2020-05-06 |
Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes |
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| SHI Xiangdong,LAI Xiaoyan.Design of Field-Effect Transistor Quenching Circuit for Geiger-Mode Avalanche Photodiodes[J].Infrared Technology,2021,43(1):56-59,78. |
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| Authors: | SHI Xiangdong LAI Xiaoyan |
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| Affiliation: | Avic China Airborne Missile Academy, Luoyang 471009, China |
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| Abstract: | The avalanche photodiode(APD)is a photosensitive component commonly used in devices employed in the field of laser detection.In this study,a field-effect transistor quenching circuit is designed for a Geiger-mode(Gm)-avalanche photodiode for detecting avalanche effects.First,a circuit model of a Gm-APD was established based on the characteristics of a traditional Gm-APD device.Second,based on this model,afield-effect transistor quenching circuit was simulated to confirm the rapid quenching of the Gm-APD.Results indicated that the field-effect transistor quenching circuit in this study exhibited a high quenching speed,a short dead time,and improved performance.The quenching and death times were 21.026 and 16.5 ns,respectively,which meet the application requirements of laser ranging imaging. |
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| Keywords: | Geiger mode APD field effect transistor quenching circuit laser ranging imaging |
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