Ultrafast Growth of High‐Quality Monolayer WSe2 on Au |
| |
| Authors: | Yang Gao Yi‐Lun Hong Li‐Chang Yin Zhangting Wu Zhiqing Yang Mao‐Lin Chen Zhibo Liu Teng Ma Dong‐Ming Sun Zhenhua Ni Xiu‐Liang Ma Hui‐Ming Cheng Wencai Ren |
| |
| Affiliation: | 1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, P. R. China;2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, P. R. China;3. Department of Physics, Southeast University, Nanjing, P. R. China;4. Tsinghua‐Berkeley Shenzhen Institute, Shenzhen, P. R. China |
| |
| Abstract: | The ultrafast growth of high‐quality uniform monolayer WSe2 is reported with a growth rate of ≈26 µm s?1 by chemical vapor deposition on reusable Au substrate, which is ≈2–3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter‐size single‐crystal WSe2 domains in ≈30 s and large‐area continuous films in ≈60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm2 V?1 s?1 and ON/OFF ratio up to 9 × 106 at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate. |
| |
| Keywords: | chemical vapor deposition monolayers ultrafast growth WSe2 |
|
|
