A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range,voltage reference |
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| Authors: | Charalambos M Andreou Julius Georgiou |
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| Affiliation: | Department of Electrical and Computer Engineering, University of Cyprus, Nicosia, Cyprus |
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| Abstract: | A low‐voltage, low‐power, low‐area, wide‐temperature‐range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190 °C (?60 to 130 °C) while consuming only 4 μW at 0.75 V. It performs a high‐order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade‐off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18‐µm standard CMOS technology and occupies an area of 0.039 mm2. The proposed reference circuit is suitable for high‐precision, low‐energy‐budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright © 2015 John Wiley & Sons, Ltd. |
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| Keywords: | analog integrated circuits bandgap voltage reference BGR CMOS temperature curvature compensation reference circuits subthreshold low voltage low power temperature coefficient temperature drift voltage reference |
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