| 特征提取在硅内部微/纳米级体缺陷检测中的应用 |
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| 引用本文： | 陈军,尤政.特征提取在硅内部微/纳米级体缺陷检测中的应用[J].激光技术,1998,22(5):290-294. |
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| 作者姓名： | 陈军 尤政 |
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| 作者单位： | 1.清华大学精密仪器与机械系, 北京, 100084 |
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| 基金项目： | 国家自然科学基金,霍英东基金 |
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| 摘 要： | 提出了一种利用特征提取来对硅中微/纳米级体缺陷的激光散射图样进行分析,以获得缺陷大小信息的分析方法.给出了该方法中第一特征值和第二特征值的定义,指出通过所提出的第一特征值及第二特征值即可迅速地判断出缺陷的大小量级所在.这种分析方法具有分析速度快,在体缺陷小于1μm时分辨率高,且可使系统实现自动化等优点.
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| 关 键 词： | 特征提取 激光散射扫描层析技术 微/纳米级体缺陷 硅 |
| 收稿时间： | 1996-12-16 |
| 修稿时间： | 1997-04-18 |
Application of character recognition in LSST |
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| Chen Jun,You Zheng,Zhou Zhaoying,Liu Xingzhan.Application of character recognition in LSST[J].Laser Technology,1998,22(5):290-294. |
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| Authors: | Chen Jun You Zheng Zhou Zhaoying Liu Xingzhan |
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| Abstract: | In this paper,after putting forward the principle of LSST in detecting micro bulk defects in silicon and some simulating results of various size of defects scattering distributions,a novel analyzing way called character recognition is developed.This paper presents the first character defined according to wave number of the laser scattering distribution,and the second character defined according to the unsymmetry of scattering optical intensity.By using the character Ⅰ,the quantity scale of bulk defects can be obtained first,and then with character Ⅱ the detailed quantity scale less than 1μm can be gained if the character Ⅰ is 1.The method has the advantages of analyzing defects size quickly and making it possible to implement automation of detecting system,etc.It is worth being used in practice. |
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| Keywords: | character recognition LSST micro/nano bulk defect silicon |
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