All‐Metallic Vertical Transistors Based on Stacked Dirac Materials |
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| Authors: | Yangyang Wang Zeyuan Ni Qihang Liu Ruge Quhe Jiaxin Zheng Meng Ye Dapeng Yu Junjie Shi Jinbo Yang Ju Li Jing Lu |
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| Affiliation: | 1. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, P. R. China;2. University of Colorado, Boulder, Colorado, USA;3. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, P. R. China;4. School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen, P. R. China;5. Collaborative Innovation Center of Quantum Matter, Beijing, P. R. China;6. Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA |
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| Abstract: | It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First‐principles quantum transport simulations of the all‐metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all‐metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high‐performance devices without opening their band gaps. |
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| Keywords: | Dirac materials vertical heterostructure field effect transistor density functional theory quantum transport |
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