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Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Authors:Jung Ho Yoon  Kyung Min Kim  Seul Ji Song  Jun Yeong Seok  Kyung Jean Yoon  Dae Eun Kwon  Tae Hyung Park  Young Jae Kwon  Xinglong Shao  Cheol Seong Hwang
Affiliation:1. Department of Materials Science and Engineering and Inter‐university Semiconductor Research Center, Seoul National University, Seoul, Korea;2. Hewlett‐Packard Laboratories, Hewlett‐Packard Company, Palo Alto, CA, USA
Abstract:
Keywords:electroforming‐free  multilevel switching  resistive switching memory  self‐rectifying  uniformity
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