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Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices
Authors:Eun Ji Yoo  Miaoqiang Lyu  Jung‐Ho Yun  Chi Jung Kang  Young Jin Choi  Lianzhou Wang
Affiliation:1. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea;2. Nanomaterials Centre, School of Chemical Engineering and AIBN, The University of Queensland, St Lucia, Brisbane, QLD, Australia;3. Department of Physics, Myong Ji University, Yongin‐si, South Korea
Abstract:
Keywords:nonvolatile memory  organic–  inorganic hybrid perovskites  resistive switching
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