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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016)
Authors:Zhihao Yu  Zhun‐Yong Ong  Yiming Pan  Yang Cui  Run Xin  Yi Shi  Baigeng Wang  Yun Wu  Tangsheng Chen  Yong‐Wei Zhang  Gang Zhang  Xinran Wang
Affiliation:1. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China;2. Institute of High Performance Computing, Singapore, Singapore;3. National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, P. R. China;4. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, P. R. China
Abstract:
Keywords:interface  mobility  molybdenum disulfide (MoS2)  phonon transport
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