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表面粗化提高倒装AlGaInP发光二极管的光提取效率
引用本文:刘自可,高伟,徐晨,邹德恕,秦园,郭靖,沈光池.表面粗化提高倒装AlGaInP发光二极管的光提取效率[J].半导体学报,2010,31(11):114011-3.
作者姓名:刘自可  高伟  徐晨  邹德恕  秦园  郭靖  沈光池
基金项目:国家重点基础研究发展计划
摘    要:对发光二极管进行表面粗化能够大幅度的提高其光提取效率。利用晶片键合技术并采用湿法刻蚀的办法粗化n面AlGaInP表面制作了一种带表面粗化的倒装薄膜发光二极管。刻蚀后的表面形貌呈现金字塔状。270μm x 270μm管芯裸装在TO-18金属管座上,在20mA的注入电流下,粗化了的LED-I光强达到了315mcd,输出光功率达到了4.622mW,比没有粗化的LED-II的光功率高1.7倍。光功率增加的原因在于粗化后形成的这种金字塔状表面,其不但减少了背部镜面系统和半导体-空气接触面的反射,而且能有效的将光从LED中散射出去。

关 键 词:铝镓铟磷,发光二极管,金属键合,表面粗化
修稿时间:6/29/2010 9:27:04 AM

Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening
Liu Zike,Gao Wei,Xu Chen,Zou Desu,Qin Yuan,Guo Jing and Shen Guangdi.Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening[J].Chinese Journal of Semiconductors,2010,31(11):114011-3.
Authors:Liu Zike  Gao Wei  Xu Chen  Zou Desu  Qin Yuan  Guo Jing and Shen Guangdi
Affiliation:Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
Abstract:
Keywords:AlGaInP  light-emitting diodes (LEDs)  metal bonding  surface roughening  
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