Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi2Te3 Films |
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| Authors: | Shi-Feng Zou Pei-Heng Zhou Xin Wang Jian-Liang Xie Long-Jiang Deng |
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| Affiliation: | 1.School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | In this work, Bi2Te3 films (250 nm) are fabricated on SiO2/Si substrates by radio frequency (RF) magnetron sputtering at room temperature, and the prepared films are annealed over the temperature range of 200 ℃ to 400 ℃. Crystallinity and electrical properties of the films can be tuned correspondingly. The power factors of Bi2Te3 films of 0.85 W/K2cm to 11.43 W/K2cm were achieved after annealing. The infrared reflectance measurements from 2.5 m to 5.0 m demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films. By means of plasmonic calculations, we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature. |
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| Keywords: | Heat treatment plasmonic power factors red-shift |
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