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1064nm低电压薄膜铌酸锂电光调制器
引用本文:徐伟,李志奇,郭翠娟,白晋军.1064nm低电压薄膜铌酸锂电光调制器[J].半导体光电,2023,44(5):679-684.
作者姓名:徐伟  李志奇  郭翠娟  白晋军
作者单位:天津工业大学 电子与信息工程学院, 天津 300000
基金项目:中国博士后科学基金面上基金项目(2019M661013);天津市科技计划项目(20YDTPJC01090,22YDTPJC00090).*通信作者:徐伟 E-mail:xuwei@tiangong.edu.cn
摘    要:低半波电压电光调制器是实现大规模光电集成的关键。文章提出了一种半波电压低于1.5 V的薄膜铌酸锂马赫-曾德尔(Mach-Zehnder, MZ)电光调制器,选用绝缘体上单晶薄膜铌酸锂材料作为设计基础,分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明,当调制臂长为3 mm时,该薄膜铌酸锂电光调制器具有1.05 V的低半波电压、0.319 dB的低损耗和27 dB的高消光比。同时,该调制器半波电压长度积为0.315 V·cm,调制效率高,具有与CMOS技术兼容的半波电压,有利于大规模光电集成。

关 键 词:铌酸锂  马赫-曾德尔电光调制器  多模干涉耦合器  低半波电压
收稿时间:2023/7/3 0:00:00

Low-voltage Thin Film Lithium Niobate Electro-optic Modulator for 1064nm
XU Wei,LI Zhiqi,GUO Cuijuan,BAI Jinjun.Low-voltage Thin Film Lithium Niobate Electro-optic Modulator for 1064nm[J].Semiconductor Optoelectronics,2023,44(5):679-684.
Authors:XU Wei  LI Zhiqi  GUO Cuijuan  BAI Jinjun
Affiliation:School of Electronics and Information Engineering, Tiangong University, Tianjin 300000, CHN
Abstract:The low half-wave voltage electro-optic modulator is crucial for achieving large-scale photonic integration. This article proposes a thin film lithium niobate Mach-Zehnder electro-optic modulator with a half-wave voltage below 1.5V. The design is based on a single crystal thin film lithium niobate material on an insulator. The influence of the straight waveguide, multimode interference coupler, bent waveguide, and modulation arm on the electro-optic modulator is analyzed. The results show that when the length of the modulation arm is 3mm, this thin film lithium niobate electro-optic modulator has a low half-wave voltage of 1.05V, a low loss of 0.319dB, and a high extinction ratio of 27dB. At the same time, the modulator has a half-wave voltage-length product of 0.315V·cm, high modulation efficiency, and a half-wave voltage compatible with CMOS technology, which is beneficial for large-scale photonic integration.
Keywords:lithium niobate  Mach-Zehnder electro-optic modulators  multimode interference couplers  low half-wave voltage
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