| 高工作温度p-on-n中波碲镉汞红外焦平面器件研究 |
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| 引用本文： | 杨超伟,赵鹏,黄伟,秦强,何天应,李红福,浦同俊,刘艳珍,熊伯俊,李立华.高工作温度p-on-n中波碲镉汞红外焦平面器件研究[J].红外与激光工程,2022,51(12):20220150-1-20220150-5. |
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| 作者姓名： | 杨超伟 赵鹏 黄伟 秦强 何天应 李红福 浦同俊 刘艳珍 熊伯俊 李立华 |
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| 作者单位： | 昆明物理研究所，云南 昆明 650223 |
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| 摘 要： | As注入掺杂的p-on-n结构碲镉汞红外探测器件具有少子寿命长、暗电流低、R0A值高等优点，是高温器件研究的重要技术路线之一。针对阵列规模640×512、像元中心距15 μm 的As掺杂工艺制备的p-on-n中波碲镉汞焦平面器件，测试了不同工作温度下的性能和暗电流。研究结果表明，在80 K工作温度下，器件响应表现出高响应均匀性，有效像元率达99.98%；随着工作温度升高，器件盲元增多，当工作温度为150 K和180 K时，有效像元率降低至99.92%和99.32%。由于对器件扩散电流更好的抑制，器件在160~200 K温度范围内的暗电流低于Rule-07。并且当工作温度在150~180 K时（300 K的背景下），器件具有较好的信噪比，极大程度地体现了高温工作的可行性。
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| 关 键 词： | 高工作温度 碲镉汞 p-on-n As掺杂 |
| 收稿时间： | 2022-03-26 |
Research on high operating temperature p-on-n medium wave mercury cadmium telluride infrared focal plane device |
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| Affiliation: | Kunming Institute of Physics, Kunming 650223, China |
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| Abstract: | The p-on-n HgCdTe infrared detector with As ion implantation is an important technology development route for high operating temperature devices, owing to long minority carrier life, low dark current, high R0A, etc. Focus on 640×512, 15 μm pitch mid-wavelength infrared HgCdTe focal plane arrays (FPA) devices prepared by As ion implantation and doping, and analysis the performance and dark current under different temperature. The results indicate that the FPA device shows high uniform responsivity and 99.98% operability under 80 K. The number of bad pixels increase with increasing of operating temperature, and the operability decreases to 99.92% and 99.32% under 150 K and 180 K, respectively. Owing to suppression of diffusion current, the dark currents of this device operating within 160-200 K are better than the Rule-07. In addition, for a 300 K background temperature, when working at 150-180 K, tthe device shows high signal-to-noise ratio, which shows the feasibility of high operating temperature detectors. |
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