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基于宽禁带氮化物的微腔光频梳进展(特邀)
引用本文:孙长征,郑焱真,熊兵,汪莱,郝智彪,王健,韩彦军,李洪涛,罗毅.基于宽禁带氮化物的微腔光频梳进展(特邀)[J].红外与激光工程,2022,51(5):20220270-1-20220270-7.
作者姓名:孙长征  郑焱真  熊兵  汪莱  郝智彪  王健  韩彦军  李洪涛  罗毅
作者单位:清华大学 电子工程系,北京 100084
基金项目:国家重点研发计划(2021YFB2800604);国家自然科学基金(61975093)
摘    要:微腔光频梳在光谱测量、微波光子学、光学原子钟和相干光通信等领域具有重要的应用。宽禁带氮化物半导体材料,如氮化铝(AlN)和氮化镓(GaN)等属于非中心对称晶体,具有二阶和三阶光学非线性系数,宽带的透明窗口以及与蓝宝石衬底较高的折射率差,使其成为研究非线性光子器件的理想平台。文中介绍了氮化物微腔的特性,同时对基于氮化物微腔光梳的相关研究进展,包括AlN微腔中的宽谱光频梳产生和光学参量振荡、GaN微腔中的孤子光频梳产生等进行了介绍和展望。

关 键 词:氮化铝    氮化镓    光频梳    光学微腔
收稿时间:2022-03-10

Advances in III-nitride-based microresonator optical frequency combs (Invited)
Affiliation:Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract:Chip-scale optical frequency combs based on microresonators have great potentials in spectroscopy, microwave photonics, optical atomic clocks and coherent optical communications. The non-centrosymmetric wurtzite crystal structure of aluminum nitride (AlN) and gallium nitride (GaN) allows them to exhibit both second- and third-order nonlinear optical coefficients, together with wide transparency window and large refractive index contrast against sapphire substrate, making III-nitrides an attractive platform for nonlinear photonics. The basic properties of AlN and GaN microresonators as well as recent advances in III-nitride-based microresonator frequency combs are presented, including broadband frequency comb generation and optical parametric oscillation in AlN microresonators, and soliton microcomb generation in GaN microresonators.
Keywords:
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