| 金掺杂碲镉汞外延材料生长及拉曼光谱研究 |
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| 引用本文： | 王仍,焦翠灵,徐国庆,陆液,张可峰,杜云辰,李向阳,张莉萍,邵秀华,林杏潮.金掺杂碲镉汞外延材料生长及拉曼光谱研究[J].红外与激光工程,2014,43(9):3046-3050. |
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| 作者姓名： | 王仍 焦翠灵 徐国庆 陆液 张可峰 杜云辰 李向阳 张莉萍 邵秀华 林杏潮 |
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| 作者单位： | 1.中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 |
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| 基金项目： | 国家自然科学基金(11304335);中国科学院三期创新项目(Q-ZY-87/Q-ZY-88) |
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| 摘 要： | 采用气相外延技术生长金掺杂的Hg1-xCdxTe 薄膜材料，通过高低温退火工艺有效控制p 型Hg1-xCdxTe 材料的电学参数，利用傅里叶光谱仪、金相显微镜以及拉曼光谱技术对薄膜材料进行表征。通过常规光伏器件的制作工艺，利用金掺杂材料初步研制了短波器件，器件性能较好黑体DP* 可达4.67E+11/(cmHz1/2W-1)。
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| 关 键 词： | 气相外延 Hg1-xCdxTe 晶体 拉曼光谱 |
| 收稿时间： | 2014-01-15 |
Growth and Raman spectrum of Au-doped Hg1-xCdxTe epitaxial crystals |
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| Affiliation: | 1.Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | Au -doped Hg1-xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1-xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1-xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E+11/(cmHz1/2W-1). |
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