| LBIC技术研究InGaAs线列探测器串音及光敏感区 |
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| 引用本文： | 吕衍秋,乔辉,韩冰,唐恒敬,吴小利,李雪,龚海梅.LBIC技术研究InGaAs线列探测器串音及光敏感区[J].红外与激光工程,2007,36(5):708-710. |
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| 作者姓名： | 吕衍秋 乔辉 韩冰 唐恒敬 吴小利 李雪 龚海梅 |
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| 作者单位： | 1. 中国科学院上海技术物理研究所,传感技术国家重点实验室,上海,200083;中国科学院研究生院,北京,100039
2. 中国科学院上海技术物理研究所,传感技术国家重点实验室,上海,200083 |
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| 摘 要： | 利用激光诱导电流技术研究了InGaAs台面探测器的相邻探测器间的串音和光敏感区。用分子束外延方法生长掺杂InGaAs的PIN InP/InGaAs/InP 外延材料，制备了256×1正照射台面InGaAs线列探测器。测试结果表明，InGaAs线列探测器相邻探测器间没有串音，虽然台面结构周围吸收层已被腐蚀，但因为少数载流子的侧向收集，扩大了有效光敏感区。
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| 关 键 词： | 激光诱导电流技术 InGaAs 探测器 串音 光敏感区 |
| 文章编号： | 1007-2276（2007）05-0708-03 |
| 收稿时间： | 2006/11/15 |
| 修稿时间： | 2006-11-15 |
Crosstalk and photoactive area of InGaAs linear detector by LBIC technique |
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| LV Yan-qiu,QIAO Hui,HAN Bing,TANG Heng-jing,WU Xiao-li,LI Xue,GONG Hai-mei.Crosstalk and photoactive area of InGaAs linear detector by LBIC technique[J].Infrared and Laser Engineering,2007,36(5):708-710. |
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| Authors: | LV Yan-qiu QIAO Hui HAN Bing TANG Heng-jing WU Xiao-li LI Xue GONG Hai-mei |
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| Affiliation: | 1 .State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai 200083, China; 2.Graduate School of the Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | The crosstalk and photoactive area of neighbor mesa InGaAs detectors are studied by LBIC technique. Based on doped-InGaAs MBE-grown PIN InP/InGaAs/InP epitaxial materials, 256×1 front- illuminated mesa InGaAs detector arrays are made . Measurement results show that there are no crosstalk between neighbor mesa InGaAs detectors. Photoactive area of InGaAs detector is extended because of the side- collecting of minority carriers, though absorbing layer around mesa structure was etched. |
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| Keywords: | LBIC technique InGaAs Detector Crosstalk Photoactive area |
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