| α-Al2O3上生长GaN过程中氮化的研究 |
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| 引用本文： | 王艳艳,秦福文,马世猛,吴爱民,王叶安.α-Al2O3上生长GaN过程中氮化的研究[J].红外与激光工程,2007,36(5):721-724. |
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| 作者姓名： | 王艳艳 秦福文 马世猛 吴爱民 王叶安 |
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| 作者单位： | 大连理工大学,三束材料改性国家重点实验室,辽宁,大连,116024 |
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| 摘 要： | 在自行设计研制的电子回旋共振等离子体增强金属有机物化学气相沉积(ECR?蛳EMOCVD)装置上生长氮化镓(GaN)薄膜，以氮等离子体为氮源，三乙基镓（TEG）为镓源，蓝宝石（α?蛳Al2O3）为衬底。通过反射高能电子衍射、原子力显微镜、射线衍射实验数据分析，研究了ECR等离子体所产生的活性氢源和氮源对蓝宝石（α?蛳Al2O3）衬底的氮化作用, 结果表明：在ECR等离子体中，不掺入氢气，温度较低时可以明显提高α?蛳Al2O3衬底的氮化效果，获得平整的氮化层，且生长的氮化镓缓冲层质量是最好的。
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| 关 键 词： | 蓝宝石 氮化 氮化镓 等离子体 |
| 文章编号： | 1007-2276-（2007）05-0721-04 |
| 收稿时间： | 2006/11/10 |
| 修稿时间： | 2006-11-10 |
Nitriding of α-Al2O3 substrates in GaN films growth |
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| WANG Yan-yan,QIN Fu-wen,MA Shi-meng,WU Ai-min,WANG Ye-an.Nitriding of α-Al2O3 substrates in GaN films growth[J].Infrared and Laser Engineering,2007,36(5):721-724. |
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| Authors: | WANG Yan-yan QIN Fu-wen MA Shi-meng WU Ai-min WANG Ye-an |
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| Affiliation: | State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | GaN thin films are prepared on sapphire(α- Al2O3) substrates using self- designed electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR- PEMOCVD) system with nitrogen plasma and the triethyl gallium(TEG) as precursors. The nitrification effect of temperature ，hydrogen and nitrogen for ECR plasma on sapphire substrate(α- Al2O3) are studied by analyzing RHEED，AFM and XRD images. The results indicate that it can markedly improve the nitrification effect of sapphire substrate at low temperature without hydrogen,and obtain smooth nitrification surface, and quality of the GaN buffer is the best. |
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| Keywords: | Al2O3 Nitrification GaN Plasma |
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