| 锑化物中红外单模半导体激光器研究进展 |
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| 引用本文： | 杨成奥,谢圣文,黄书山,袁野,张一,尚金铭,张宇,徐应强,牛智川.锑化物中红外单模半导体激光器研究进展[J].红外与激光工程,2018,47(5):503002-0503002(8). |
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| 作者姓名： | 杨成奥 谢圣文 黄书山 袁野 张一 尚金铭 张宇 徐应强 牛智川 |
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| 作者单位： | 1.中国科学院半导体研究所 半导体超晶格国家重点实验室,北京 100083; |
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| 基金项目： | 国家自然科学基金（61790581，61790582，61435012）;国家重点基础研究发展计划（2014CB643903） |
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| 摘 要： | 锑化物材料因为其天然的禁带宽度较小的优势，是2~4 m波段半导体光电材料和器件研究的理想体系。近年来，国内外在锑化物大功率半导体激光器方面的研究取得了很大的进展，实现了大功率单管、阵列激光器的室温工作。然而，由于锑化物材料与常见的半导体单模激光器制备工艺的不兼容性，只有少数几个研究单位和公司掌握了锑化物单模激光器的制备技术。文中介绍了锑化物单模激光器常用的侧向耦合分布反馈激光器的基本原理，分析了其设计的关键技术，回顾了锑化物单模激光器的设计方案和制备技术，并针对国内外锑化物单模激光器主要研究内容进行了总结。
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| 关 键 词： | 侧向耦合分布反馈激光器 LC-DFB 量子阱 GaSb 二阶布拉格光栅 |
| 收稿时间： | 2018-03-05 |
Research progress of antimonide infrared single mode semiconductor laser |
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| Affiliation: | 1.State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;2.College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China |
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| Abstract: | Antimonide materials are the ideal system for the semiconductor photoelectric materials and devices of 2-4 m due to its narrow bandgap. In recent years, great progress has been made in the research of antimonide high-power semiconductor lasers at home and abroad, and the room temperature operation of high-power single-tube and array lasers has been achieved. However, due to the incompatibility of antimonide materials with common fabrication technique of semiconductor single-mode lasers, only a few research institutes and companies have mastered the preparation of antimonide single-mode lasers. In this paper, the basic principle of the laterally coupled distributed feedback laser was introduced and the key technologies of the laser were briefly analyzed. The design scheme and preparation technology of the antimony single mode laser were also reviewed and summarized. |
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