| 无基片空间合成的220 GHz三次倍频电路研究 |
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| 引用本文： | 胡南.无基片空间合成的220 GHz三次倍频电路研究[J].红外与激光工程,2019,48(2):225002-0225002(4). |
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| 作者姓名： | 胡南 |
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| 作者单位： | 1.北京星英联微波科技有限责任公司,北京 100084 |
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| 摘 要： | 基于四阳极结同向串联型GaAs平面肖特基二极管，设计并实现了无基片空间合成的220 GHz三次倍频电路。采用四支肖特基二极管协同工作，在脊波导小片上下两侧各倒装焊接两支肖特基二极管，构成上下反向结构。采用场路结合的方式，对倍频电路的倍频效率进行了仿真。仿真结果显示输入功率为300 mW，输出频率为213~229 GHz时，倍频效率大于3%；采用E波段功率放大器推动三次倍频电路，获得了倍频器输出功率。测试数据表明，驱动功率为300 mW时，输出频率为213~229 GHz时，输出功率大于5 dBm，倍频效率为1%~2%。
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| 关 键 词： | 太赫兹 无基片 GaAs平面肖特基二极管 空间合成 |
| 收稿时间： | 2018-09-05 |
Research on no-substrate space-combined 220 GHz tripler frequency multiplier circuit |
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| Affiliation: | 1.A-INFO Inc.,Beijing 100084,China |
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| Abstract: | A 220 GHz tripler frequency multiplier using no-substrate and space combined structure was designed and realized based on four anodes in parallel-series GaAs planar Schottky diodes. Four Schottky diodes was adopted and divided into two groups. One group with two Schottky diodes placed in the same direction was flip-chiped on the top surface of the slab waveguide metal film and the other group on the bottom surface composed anti-series structure. The efficiency of the circuit was stimulated combined of EM simulator and circuit simulator. The stimulated efficiency was bigger than 3% over the band of 213 GHz to 229 GHz with the input power of 300 mW. An E-band power amplifier was used to drive the circuit to get the output power of the multiplier. The measured output power was bigger than 5 dBm over the band of 213 GHz to 229 GHz with the input power of 300 mW. The efficiency was 1% to 2%. |
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