| 分子束外延InAlSb红外探测器光电性能的温度效应 |
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| 引用本文： | 陈刚,李墨,吕衍秋,朱旭波,曹先存.分子束外延InAlSb红外探测器光电性能的温度效应[J].红外与激光工程,2017,46(12):1204003-1204003(5). |
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| 作者姓名： | 陈刚 李墨 吕衍秋 朱旭波 曹先存 |
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| 作者单位： | 1.中国空空导弹研究院,河南 洛阳 471009; |
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| 基金项目： | 国家国际科技合作专项项目（2014DFR50790） |
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| 摘 要： | 采用分子束外延生长方法在InSb （100）衬底上生长p+-p+-n-n+势垒型结构的In1-xAlxSb外延层。运用X射线衍射对材料的晶体质量及Al组分进行测试和表征，InAlSb外延层的半峰宽为0.05，表明外延材料的单晶性能良好，并通过布拉格方程和维戈定律计算出Al组分为2.5%。然后将外延材料制备成多元红外探测并测得77~210 K下的光谱响应曲线，实验发现探测器的截止波长从77 K时的4.48 m增加至210 K时的4.95 m。通过数据拟合得出In0.975Al0.025Sb禁带宽度的Varshni关系式以及其参数Eg（0）、和的值分别为0.238 6 eV，2.8710-4 eV/K，166.9 K。经I-V测试发现，在110 K，-0.1 V偏压下，器件的暗电流密度低至1.0910-5 A/cm-2，阻抗为1.40104 cm2，相当于77 K下InSb探测器的性能。同时分析了温度对器件不同类型的暗电流的影响程度，并得到器件的扩散电流与产生-复合电流的转变温度约为120 K。
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| 关 键 词： | 分子束外延 InAlSb 光电特性 红外探测器 |
| 收稿时间： | 2017-04-05 |
Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy |
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| Affiliation: | 1.China Airborne Missile Academy,Luoyang 471009,China;2.Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China |
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| Abstract: | The In1-xAlxSb epitaxial layers of p+-p+-n-n+ barrier structure were grown on the InSb(100) substrate by molecular beam epitaxy. The crystal quality and Al composition of the material were measured and characterized by X-ray diffraction. The full width at half maximum of the InAlSb epitaxial layer was 0.05, indicating good performance monocrystalline epitaxial material. The Al content of 2.5% was calculated according to Bragg's formula and Vegard's law. When the InAlSb material was fabricated as an infrared detector diode and the spectral response curve was measured at 77 K to 210 K, it was found that the cutoff wavelength of the detector increased from 4.48 m at 77 K to 4.95 m at 210 K. By fitting the Varshni relation of In0.975Al0.025Sb with the experimental data of bandgap, the values of Eg(0), and are 0.238 6 eV, 2.8710-4 eV/K and 166.9 K, respectively. After the I-V test, the dark current density reached as low as 1.0910-5 A/cm-2 and the resistance area product is 1.40104 cm2 at 110 K, -0.1 V bias, which is equivalent to the performance of InSb detector at 77 K. Besides, the influence of the temperature on different types of dark current was analyzed, and the transition temperature between the diffusion current and G-R current was 120 K. |
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