| 锑化铟红外焦平面阵列探测器的热应力结构优化 |
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| 引用本文： | 张江风,刁云飞,张晓玲,孟庆端.锑化铟红外焦平面阵列探测器的热应力结构优化[J].红外技术,2021,43(12):1202-1206. |
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| 作者姓名： | 张江风 刁云飞 张晓玲 孟庆端 |
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| 作者单位： | 河南科技大学 电气工程学院，河南 洛阳 471023 |
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| 摘 要： | 在液氮冲击实验中，锑化铟红外焦平面阵列探测器中各层材料之间线膨胀系数的不同将导致热失配产生，过大的热失配应力将引起锑化铟芯片断裂失效。为了降低热失配对锑化铟芯片的影响，基于弹性多层体系热应力计算理论，借鉴平衡复合物结构设计方法，优化平衡复合物结构上表面的热应变，使得平衡复合物结构中硅读出电路上表面的热应变尽可能接近锑化铟芯片下表面的热应变，从而大幅降低锑化铟芯片中的热应力。考虑器件加工工艺成熟度，经一系列计算表明:当硅读出电路的厚度取25 μm时，平衡复合物结构中硅读出电路上表面的热应变与InSb芯片下表面的热应变最为接近，此时锑化铟芯片中的拉应力最小。锑化铟芯片中拉应力的大幅降低，将为消减液氮冲击中锑化铟芯片的碎裂几率提供可以信赖的结构设计方案和实现途径。
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| 关 键 词： | 红外焦平面阵列探测器 热失配 热应变 平衡复合物结构 |
| 收稿时间： | 2020-09-12 |
Thermal Stress Structural Optimization of InSb Infrared Focal Plane Array Detector |
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| Affiliation: | School of Electrical Engineering, Henan University of Science and Technology, Luoyang 471023, China |
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| Abstract: | In liquid nitrogen shock experiments, a thermal mismatch occurs owing to the difference in the linear expansion coefficients of the layered In antimonide infrared focal plane array detector, and the excessive thermal mismatch stress fractures the InSb chip. Based on the calculation theory of the thermal stress suitable for the elastic multilayer system, employing the design method of a balanced composite structure is considered to be effective in reducing the impact of the thermal mismatch on the InSb chip. Accordingly, we optimize the thermal strain on the upper surface of the balanced composite structure. In other words, the optimization involved making the thermal strain on the upper surface of the Readout circuit in the balanced composite structure as close as possible to the thermal strain on the lower surface of the InSb chip. Consequently, the reduced thermal mismatch reduces the thermal stress in the InSb chip. Considering the maturity of the device processing technology, the thickness of the readout circuit is set at 25 μm, which is the thinnest sheet of the readout circuit fabricated in our lab using the chemical mechanical polishing method. For the defined thickness (25 μm) of the readout circuit, the calculation results indicate that the thermal strain on the upper surface of the readout circuit is the closest to the thermal strain on the lower surface of the InSb chip. When these two structures are glued together by the underfill, the tensile stress accumulated in the InSb chip is the smallest. The significant reduction in the tensile stress in the InSb chip provides a reliable structural design scheme and an implementation approach to reduce the fragmentation probability of the InSb chip in the liquid nitrogen impact. |
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