High‐Performance Near‐Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets |
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| Authors: | Jie Li Zhenxing Wang Yao Wen Junwei Chu Lei Yin Ruiqing Cheng Le Lei Peng He Chao Jiang Liping Feng Jun He |
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| Affiliation: | 1. CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, P. R. China;2. University of Chinese Academy of Sciences, Beijing, P. R. China;3. CAS Center for Excellence in Nanoscience, CAS Key Laboratory for Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China;4. State Key Lab Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, P. R. China |
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| Abstract: | As an emerging 2D layered material, Bi2O2Se has shown great potential for applications in thermoelectric and electronics, due to its high carrier mobility, near‐ideal subthreshold swing, and high air‐stability. Although Bi2O2Se has a suitable band gap for infrared (IR) applications, its photoresponse properties have not been investigated. Here, high‐quality ultrathin Bi2O2Se sheets are synthesized via a low‐pressure chemical vapor deposition method. The thickness of 90% Bi2O2Se sheets is below 10 nm and lateral sizes mainly distribute in the range of 7–11 µm. In addition, it is found that triangular sheets largely lack “O” content, even only 0.2 for Bi2O0.2Se. The near‐IR photodetection performance of Bi2O2Se nanosheets is systematically studied by variable temperature measurements. The response time, responsivity, and detectivity can approach up to 2.8 ms, 6.5 A W?1, and 8.3 × 1011 Jones, respectively. Additionally, the critical performance parameters, including responsivity, rising time, and decay time, remain at almost the same level when the temperature is changed from 80 to 300 K. These phenomena are likely due to the fact that as‐grown ultrathin Bi2O2Se sheets have no surface trap states and shallow defect energy levels. The findings indicate ultrathin Bi2O2Se sheets have great potentials for future applications in ultrafast, flexible near‐IR optoelectronic devices. |
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| Keywords: | 2D materials Bi2O2Se flexible materials near‐IR photodetectors ultrathin nanosheets |
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