| 绝缘衬底上化学气相沉积法生长石墨烯材料 |
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| 引用本文： | 刘庆彬,蔚翠,何泽召,王晶晶,周闯杰,郭建超,冯志红.绝缘衬底上化学气相沉积法生长石墨烯材料[J].化工学报,2017,68(Z1):276-282. |
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| 作者姓名： | 刘庆彬 蔚翠 何泽召 王晶晶 周闯杰 郭建超 冯志红 |
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| 作者单位： | 河北半导体研究所专用集成电路国家级重点实验室, 河北 石家庄 050051 |
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| 基金项目： | 国家自然科学基金项目（61306006，61674131）。 |
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| 摘 要： | 利用化学气相沉积法，在Si衬底、蓝宝石衬底和SiC衬底上生长石墨烯材料，研究石墨烯的表面形貌、缺陷、晶体质量和电学特性。原子力显微镜、光学显微镜和拉曼光谱测试表明，Si3N4覆盖层可以有效抑制3C-SiC缓冲层的形成；低温生长有利于保持材料表面的平整度，高温生长有利于提高材料的晶体质量。5.08 cm蓝宝石衬底上石墨烯材料，室温下非接触Hall测试迁移超过1000 cm2·V-1·s-1，方块电阻不均匀性为2.6%。相对于Si衬底和蓝宝石衬底，SiC衬底上生长石墨烯材料的表面形态学更好，缺陷更低，晶体质量和电学特性更好，迁移率最高为4900 cm2·V-1·s-1。
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| 关 键 词： | 石墨烯 绝缘衬底 化学气相沉积 表面 形态学 电学特性 |
| 收稿时间： | 2017-04-01 |
| 修稿时间： | 2017-05-23 |
Epitaxial graphene on insulating substrates by chemical vapor deposition |
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| LIU Qingbin,YU Cui,HE Zezhao,WANG Jingjing,ZHOU Chuangjie,GUO Jianchao,FENG Zhihong.Epitaxial graphene on insulating substrates by chemical vapor deposition[J].Journal of Chemical Industry and Engineering(China),2017,68(Z1):276-282. |
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| Authors: | LIU Qingbin YU Cui HE Zezhao WANG Jingjing ZHOU Chuangjie GUO Jianchao FENG Zhihong |
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| Affiliation: | National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051, Hebei, ChinaS |
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| Abstract: | Since graphene was made by mechanical exfoliation in 2004,it has attracted great interest due to its unique properties. The growth of graphene directly on insulating substrates without catalyst has emerged as a trend for chemical vapor deposition (CVD)-graphene. This growth method offers an advantage in avoiding the post-growth transfer process. So far,many insulating substrates have been used for graphene growth by CVD,such as Si,sapphire,SiC,and other substrates. In this work,Si,sapphire and SiC substrate were chosen for graphene growth. The surface morphology,defects,crystal quality and electronics characteristic of the samples were characterized by atomic force microscopy (AFM),optic microscopy (OM),Raman spectroscopy,and Hall system. AFM and Raman results showed that 3C-SiC layer could be controlled by Si3N4 covered on Si substrate,and 2D-FWHM of material on Si substrate was between 70 cm-1 and 90 cm-1,that crystal quality was not as good as material by traditional method. Graphene was grown on a 5.08 cm sapphire substrate,the material surface morphology appeared more flat under the lower growth temperature,while the crystal quality was better under the higher temperature. The carrier mobility is above 1000 cm2·V-1·s-1 at room temperature. Compared to epitaxial graphene by Si sublimation,CVD-grown graphene on SiC substrate has a more flat surface morphology,lower defect,better crystal quality,and higher carrier mobility. The highest carrier mobility of CVD-grown graphene on SiC substrate is 4900 cm2·V-1·s-1 at room temperature. |
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| Keywords: | graphene insulating substrates chemical vapor deposition surface morphology electronics characteristic |
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