Artificial Synapses Emulated by an Electrolyte‐Gated Tungsten‐Oxide Transistor |
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| Authors: | Jing‐Ting Yang Chen Ge Jian‐Yu Du He‐Yi Huang Meng He Can Wang Hui‐Bin Lu Guo‐Zhen Yang Kui‐Juan Jin |
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| Affiliation: | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China;2. School of Physical Sciences, University of Chinese Academy of Science, Beijing, China;3. Collaborative Innovation Center of Quantum Matter, Beijing, China |
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| Abstract: | Considering that the human brain uses ≈1015 synapses to operate, the development of effective artificial synapses is essential to build brain‐inspired computing systems. In biological synapses, the voltage‐gated ion channels are very important for regulating the action‐potential firing. Here, an electrolyte‐gated transistor using WO3 with a unique tunnel structure, which can emulate the ionic modulation process of biological synapses, is proposed. The transistor successfully realizes synaptic functions of both short‐term and long‐term plasticity. Short‐term plasticity is mimicked with the help of electrolyte ion dynamics under low electrical bias, whereas the long‐term plasticity is realized using proton insertion in WO3 under high electrical bias. This is a new working approach to control the transition from short‐term memory to long‐term memory using different gate voltage amplitude for artificial synapses. Other essential synaptic behaviors, such as paired pulse facilitation, the depression and potentiation of synaptic weight, as well as spike‐timing‐dependent plasticity are also implemented in this artificial synapse. These results provide a new recipe for designing synaptic electrolyte‐gated transistors through the electrostatic and electrochemical effects. |
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| Keywords: | artificial synapse electrolyte gating synaptic transistor tungsten oxide films |
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