| 熔融石英玻璃衬底的平面研磨加工实验研究 |
| |
| 引用本文： | 阎秋生,李基松,潘继生.熔融石英玻璃衬底的平面研磨加工实验研究[J].金刚石与磨料磨具工程,2019,39(1):60-65. |
| |
| 作者姓名： | 阎秋生 李基松 潘继生 |
| |
| 作者单位： | 广东工业大学 机电工程学院,广州,510006;广东工业大学 机电工程学院,广州,510006;广东工业大学 机电工程学院,广州,510006 |
| |
| 基金项目： | NSFC-广东联合基金(No.U1801259)广东省研究生教育创新计划项目(No.2018JGXM35，No.2018SFKC15)。 |
| |
| 摘 要： | 熔融石英玻璃衬底的研磨加工是其超光滑抛光加工的基础工序。采用游离磨料对熔融石英玻璃进行单面粗研和精研加工，研究磨料质量分数、研磨盘转速、研磨液流量和研磨时间对石英玻璃表面质量和材料去除率的影响。结果表明:粗研过程中，随着磨料质量分数、研磨盘转速、研磨液流量的增大，工件材料去除率先增大后减小；随着加工时间的延长，表面粗糙度Ra逐渐达到稳定水平。在磨料质量分数4%、研磨液流量20 mL/min、研磨盘转速60 r/min、加工30 min时，熔融石英玻璃衬底的表面粗糙度Ra达 0.11 μm。在熔融石英玻璃衬底的精研过程中，选用平均粒径3 μm的CeO2加工50 min后的表面粗糙度Ra最低，为4.11 nm。
|
| 关 键 词： | 熔融石英玻璃 游离磨料 研磨 材料去除率 表面粗糙度 |
Experimental research on plane lapping of fused silica glass substrate |
| |
| YAN Qiusheng,LI Jisong,PAN Jisheng.Experimental research on plane lapping of fused silica glass substrate[J].Diamond & Abrasives Engineering,2019,39(1):60-65. |
| |
| Authors: | YAN Qiusheng LI Jisong PAN Jisheng |
| |
| Affiliation: | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| |
| Abstract: | The lapping of fused silica glass substrate is a basic process of its super smooth polishing. Free abrasive was used in rough grinding and fine finishing fused quartz glass on one side. The effects of abrasive mass fraction, rotation speed of grinding disc, flow rate of grinding fluid and grinding time on surface quality and material removal rate of fused quartz glass were studied. The results show that the material removal rate increases first and then decreases with the increase of abrasive mass fraction, grinding disc speed and grinding fluid flow rate. With the extension of processing time, the surface roughness Ra gradually reaches a stable level. The surface roughness Ra of fused quartz glass substrate reaches 0.11 μm at conditions of the mass fraction of abrasive particles 4%, the flow rate of abrasive fluid 20 mL/min, the speed of abrasive disc 60 r/min and the processing time 30 min. When fine finishing fused silica glass substrates, the surface roughness Ra of the substrates is the lowest after 50 minutes processing with 3 μm-sized CeO2 particles, which is 4.11 nm. |
| |
| Keywords: | |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《金刚石与磨料磨具工程》浏览原始摘要信息 |
|
点击此处可从《金刚石与磨料磨具工程》下载全文 |
|
