| 低压力下环保型络合剂和氧化剂对铝合金化学机械抛光的影响 |
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| 引用本文： | 朱玉广,王永光,钮市伟,谢雨君,雷翔宇.低压力下环保型络合剂和氧化剂对铝合金化学机械抛光的影响[J].金刚石与磨料磨具工程,2020,40(1):74-78. |
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| 作者姓名： | 朱玉广 王永光 钮市伟 谢雨君 雷翔宇 |
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| 作者单位： | 苏州大学 机电工程学院, 江苏 苏州 215006 |
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| 基金项目： | 苏州市重点研发产业化项目;国家自然科学基金面上项目 |
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| 摘 要： | 在低平坦化压力下用壳寡糖(COS)环保型络合剂及H2O2氧化剂化学机械抛光铝合金，用原子力显微镜观测抛光后的表面质量，并用X射线光电子能谱仪分析其表面的钝化膜元素，用纳米压痕仪分析钝化膜的力学性能，研究COS及H2O2对铝合金CMP的作用机理。结果表明:H2O2质量分数为2%时，材料去除率随COS含量的增加而增大，当COS质量分数为0.32%时，材料的去除速率达861 nm/min，表面粗糙度最低为2.50 nm；COS质量分数为0.50%时，材料去除率随H2O2含量的增加先增大后减小，当H2O2质量分数为1.2%时，材料的抛光去除速率达840 nm/min，同时其表面粗糙度为3.52 nm。加入COS络合剂会在铝合金表面形成主要成分为Al-COS、Al2O3和Al(OH)3的弱钝化膜。
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| 关 键 词： | 化学机械抛光 铝合金 壳寡糖 环保 弱钝化 |
Effect of environmental friendly complexing agent and oxidant on CMP of aluminium alloy under low pressure |
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| ZHU Yuguang,WANG Yongguang,NIU Shiwei,XIE Yujun,LEI Xiangyu.Effect of environmental friendly complexing agent and oxidant on CMP of aluminium alloy under low pressure[J].Diamond & Abrasives Engineering,2020,40(1):74-78. |
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| Authors: | ZHU Yuguang WANG Yongguang NIU Shiwei XIE Yujun LEI Xiangyu |
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| Affiliation: | School of Mechanical and Electric Engineering, Soochow University, Suzhou 215006, Jiangsu, China |
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| Abstract: | Effects of oxidizer hydrogen peroxide(H 2 O 2)and complexing agent chitosan oligosaccharide(COS)on material removal of aluminium alloy were investigated in alkaline slurry by using atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS)and nanoindentation tests.In addition,the chemical effect of H 2 O 2 and COS occurred in CMP process was discussed.The results show that the material removal rate increased as the COS concentration increased when the mass concentration of H 2 O 2 was 2%.It can obtain remarkably smooth surface R a=2.5 nm and 861 nm/min removal rate when the mass concentration of COS reached 0.32%.The material removal rate was enhanced by the increase of H 2 O 2 concentration when the mass concentration of COS was 0.5%.After reaching the maximum value,the material removal rate began to decrease.The surface roughness was 3.52 nm and the material removal rate was 840 nm/min when the mass concentration of H 2 O 2 reached 1.2%.A weak passive layer is mainly consisted by Al-COS、Al 2 O 3 and Al(OH)3 when COS was added. |
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| Keywords: | chemical mechanical polishing(CMP) aluminum alloy chitosan oligosaccharide(COS) environment friendly weak passivation |
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