结合连续管线成型技术和粉末套管法制备SiC掺杂的MgB_2超导线材研究

结合连续管线成型技术和粉末套管方法,原位掺杂SiC制备出了20m长的单芯MgB2/Fe、MgB2/Nb/Fe线材和7芯、19芯及49芯的MgB2/Nb/Cu/Fe复合多芯线材。采用XRD和SEM分别对烧结后样品芯部进行相成分和微观结构研究,并通过TEM对SiC掺杂的机理进行了简单分析。采用四引线法对线材进行电流测量并获得临界电流密度。结果表明,线材经过不同温度保温15min的真空退火后,在800℃形成的MgB2相含量最高,其中单芯MgB2/Fe线材在4.2K,11T下Jc值超过104A/cm2,7芯复合线材在4.2K,7.5T下Jc值也达到104A/cm2,并且具有较好的热稳定性,在低场下仍可稳定通过电流。     

MgB_2超导带材的失超传播特性研究

采用原位法粉末装管工艺(In-situ)制备了MgB2/Fe/Cu单芯线材,通过X射线衍射、扫描电镜、能谱分析和物性测试仪等手段研究了热处理温度对线材微观结构及超导电性的影响。结果显示,在热处理过程中,超导芯丝与包套材料之间有Fe2B中间界面层产生。并且随着热处理温度的升高,Fe2B层厚度也逐渐增加。同时,热处理温度对线材的临界电流密度(Jc)有显著影响:在低场下(<4.5T),700℃制备线材具有高的Jc值;在高场下,750℃制备线材具有高的Jc值;800℃制备线材的Jc随磁场增加而迅速减小。微观结构分析结果表明,增加MgB2中晶界密度和改善连接性是获得高Jc线材的关键。     

日本国立材料科学研究院粉末套管法制备MgB2线材进展

日本国立材料科学研究院Kumakura领导的研究小组报道了其MgB2线材制备研究的最新进展。这个研究小组通过优化采用不锈钢作为包套材料的粉末套管法的加工工艺参数，最近获得了在4.2K，自场条件下临界电流密度(Jc)达45000A/cm2的MgB2线材，该测量结果是在未经任何热处理的MgB2线材中获得的。 更高Jc的结果可以在经过400℃至600℃热处理的线材中获得，经过热处理后线材在高场下(10T)的Jc可以提高近一个数量级，Jc在 900℃的热处理温度下开始降低。该小组的研究人员称Jc增加原因是MgB2颗粒之间的连接被增强了，而Jc在高于800℃热处理后…     

B_(10)C掺杂MgB_2/NbZr/Cu线材的超导性能研究

通过原位法粉末装管工艺制备了B10C掺杂的MgB2/NbZr/Cu超导线材。采用X射线衍射仪、扫描电子显微镜(SEM)、PPMS测试仪等测试手段检测了样品的成相情况、微观结构以及超导电性。结果显示该掺杂对MgB2/NbZr/Cu超导线材的磁通钉扎性能及临界电流密度有一定的影响:750℃/2h的热处理制度能够使C元素成为有效磁通钉扎中心,线材的磁通钉扎性能和超导电性均有所提高。20K时,MgB2/NbZr/Cu超导线材的不可逆磁场Hirr达到5.2T;在20K、2T外磁场条件下,其临界电流密度达到2×104A/cm2。     

First-principles Study on Structure and Hardness of the RuB2

采用原位法粉末装管工艺( in-situ PIT)制备了无定形碳掺杂MgB2/Nb/Cu超导线材并研究了该掺杂对MgB2微观结构及超导电性的影响.复合线材中以Nb作为阻隔层、Cu作为稳定体并采用冷拉拔工艺进行加工.研究了无定形碳掺杂对MgB2相形成、微观结构及超导电性的影响,其中掺杂量分别为MgB2-xCx(x=0.0,0.05,0.08,0.10,0.15).分别采用XRD、SQUID、SEM/EDS及传输电流测试等方法对MgB2/Nb/Cu线材进行分析测试.XRD分析结果显示,700℃热处理后的线材可以获得纯度较高的MgB2超导相;微观结果照片显示无定形碳掺杂后可以获得良好的晶粒连接性;能谱分析表明掺杂物C元素均匀的分布在MgB2基体中;通过四引线法测试了传输临界电流密度Jc,在4.2 K、5T,其Jc值高达1.4×105 A/cm2;在4.2K、10T,其Jc值为3.3×104A/cm2.     

烧结温度对MgB_2超导线材微观结构及超导电性的影响

使用干燥的B粉和Mg粉,采用分步反应法制备了SiC(40～45 nm)掺杂的MgB2/Nb/Cu超导线材。通过X射线衍射仪、扫描电子显微镜,研究了不同烧结温度对所制备样品的相组成、微观结构的影响。采用标准四引线法测定了样品的电阻温度曲线。结果表明:热处理温度对线材的微观结构有显著影响,适宜的热处理温度可提高C原子实际进入晶格取代B原子的数量。在750℃×2 h,C原子替代B的取代分数达3.73%。分步反应法制备MgB2超导线材可有效地引入B位C掺杂,从而提高线材在高磁场下的载流能力。     

提高Cu/MgB2线的传输临界电流

为使MgB2超导体能满足商业化应用的要求，必须制作出具有高不可逆线和高临界电流密度，并且在导体整个长度上具有均匀特性的坚固耐用的复合超导体。目前制作MgB2超导体常采用2种粉末装管技术(PIT)，一种是原位工艺(in-situ)，另一种是前位工艺(ex-situ)。原位工艺是将镁粉和硼粉(1∶2)混合作为线芯，反应生成MgB2，而前位工艺使用已经反应生成了MgB2的粉。MgB2超导线的不可逆线比较低，最近有实验报道认为通过对MgB2块材进行中子幅照可以改善不可逆线。奥地利大学原子能研究所最近采用原位工艺制备了Cu/MgB2线，并对样品进行了中子…     

烧结工艺对多芯MgB2线材磁通钉扎特性的影响

MgB2 超导电性的发现引起基础研究和应用研究的广泛兴趣。至今高临界电流的MgB2 块材、薄膜、线材和带材 ,都有报道。对制造电缆和磁体的实际应用而言 ,关键是开发带材和线材 ,其中最根本的是确定MgB2 的磁通钉扎特性 ,因为磁通蠕动越过钉扎中心将限制临界电流密度。为了理解磁通钉扎基本机理 ,从而提高载流能力 ,重要的是研究抵抗磁通运动的激活能。有人研究了采用先位法 (ex -situ)制备的铁基四芯MgB2 线材的磁通钉扎特性 ,采用 2根线材 ,通过测量其温度—电阻变化和电流—电压特性 ,发现其一 (B线 )在 8T高磁场下都有高的传输特性 ,…     

不同包套石墨烯掺杂MgB_2超导线材的性能

分别采用Fe和Nb作为阻隔层包套材料,通过原位粉末装管法(in-situ PIT)制备出石墨烯掺杂的MgB_2/Fe(Nb)/Cu线材和Nb包套未掺杂的MgB_2单芯线材。线材在高纯氩气保护下、670～800℃保温2 h热处理。XRD结果显示,670℃热处理的线材其主相均为MgB_2超导相,其中Fe包套线材中含有Fe_2B杂相。3种线材的微观结构显示,未掺杂线材基体中的孔洞相对较大,而石墨烯掺杂的Fe、Nb包套线材基体中的孔洞相对较小。线材样品的拉伸结果显示,热处理前由于加工硬化,3种线材的拉伸应变值远远低于热处理后的拉伸应变值,其中铁包套线材的硬化最为严重,但无论是否热处理,Fe包套样品的强度都是最大的。样品的四引线法传输性能测试显示,670℃热处理Nb包套掺杂线材的临界电流密度(J_c)在4.2 K,2 T、4 T、6 T范围内均高于Fe包套掺杂线材的J_c,石墨烯掺杂线材(Nb、Fe包套)在2 T具有更好的传输性能,Nb包套掺杂线材的J_c最高可达到4.59×10~5 A/cm~2。当外加磁场大于4 T后,2种包套的掺杂线材的J_c均低于未掺杂的线材,Fe包套样品的超导性能降低更大,显示其掺杂未全部进入晶格,导致其在高场下磁通钉扎作用下降。     

轧制与拉伸对NbTiTa/Cu多芯复合线超导性能的影响

利用Nb47Ti和Ta片作为原料,经过3次挤压并结合拉伸和轧制2种不同工艺,通过时效热处理制备出了NbTiTa/Cu超导线材.通过标准四引线法测量了2种线材在4.2 K下的超导性能.结果表明,采用拉伸法制备的NbTiTa线材具有更高的临界电流密度,φ1.0 mm的超导线材Jc在4.2 K、8 T下,超导性能达到791 A/mm2.通过对线材的微观组织观察表明:在相同条件下,采用拉伸后的试样芯径大小均匀、铜比均匀、芯丝排列整齐且间距相等.     

Structural, mechanical and corrosion properties of TiOxNy/ZrOxNy multilayer coatings

Results on the deposition and characterization of TiO_xN_y/ZrO_xN_y multilayers, with bilayer periods of 20 and 400 nm, are presented. The coatings were deposited on TiNiNb alloy substrates by the pulsed magnetron sputtering method. The elemental composition, hardness, adhesion and corrosion resistance of the coatings were analyzed.As resulted from the XPS analysis, the individual layers consisted of a mixture of titanium or zirconium oxynitrides and corresponding oxides. X-ray analysis revealed that the coatings were amorphous. Only slight differences between the microhardness and adhesion values of the coatings with small and large bilayer period Λ were found. The experiments also showed that the multilayered coatings improved the corrosion resistance of the uncoated alloy and reduced the amount of ion release in artificial body fluids.     

MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Zinc-blende B_xAl_1−xAs and B_xAl_1−x−yIn_yAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of B_xAl_1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained B_xAl_1−xAs alloys. AFM measurements show that RMS roughness of B_xAl_1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of B_xAl_1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk B_xAl_1−x−yIn_yAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.     

High strength and good ductility of casting Al-Cu alloy modified by PrxOy and LaxOy

A modified Al-Cu alloy with high tensile strength and ductility of about 574.0 MPa and 10.4%, respectively, was obtained by adding multiple rare earth oxides (Pr_xO_y and La_xO_y) as modifier. Compared with the unmodified Al-Cu alloy, the tensile strength and ductility of the modified sample were increased by 24.3% and 42.5%, respectively. The improvement both in the strength and ductility may attribute to the finer crystal grains and dendrites, more homogeneously distributed θ′ phase precipitates and the intermetallic compounds formed at the crystal grain boundaries as well as in the space of the dendrites.     

Hydrothermal synthesis of superconductors Ba1−xKxBiO3 and double perovskites Ba1−xKxBi1−yNayO3

Superconductors Ba_1−xK_xBiO₃ and body-centered double perovskites Ba_1−xK_xBi_1−yNa_yO₃ have been selectively synthesized by a facile hydrothermal route. The appropriate ratio and adding sequence of initial reagents, alkalinity, reaction temperature and time are the critical factors that influence the crystal growth of the compounds. The purity and homogeneity of the crystals were detected by the ICP, SEM, EDX and TEM studies. Magnetic measurements show that the superconducting transition temperatures T_C of Ba_1−xK_xBiO₃ decrease from 22 K (for x = 0.35) to 8 K (for x = 0.55) with increasing the K doping level.     

铸造CAD／CAE／ES／PDM／ERP一体化及集成技术研究

详细阐述了支持铸造工艺设计、工艺优化、工艺信息管理、企业管理的系统研究与应用特点,在此基础上提出了基于PDM平台的铸造CAD／CAE／ES／PDM／ERP一体化框架体系,在华铸实验室现有软件体系（华铸CAE／CAD／PDM／ERP）及应用的基础上,设计与实现了一体化系统关键点及其集成技术。最后,以若干实际案例来证明本研究一体化系统的实用性。     

生物医用NiTi形状记忆合金腐蚀研究进展

镍钛形状记忆合金(NiTi-SMA)具有较好的耐腐蚀和机械性能,在口腔和临床医学中有着大量而广泛的应用。NiTi-SMA腐蚀后释放Ni²⁺会引发细胞毒性和过敏反应,进一步提高NiTi-SMA的耐蚀性是目前生物医学材料领域发展的核心之一。本文对近年来国内外有关口腔医学和临床医学中常用NiTi-SMA的腐蚀研究现状进行了总结,同时也对NiTi-SMA增材制造及表面改性技术进行了评述,以期为开发高性能抗腐蚀生物医用NiTi-SMA提供一定的指导意义。     

Li掺杂Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3高熵陶瓷的制备及介电性能研究

近年来,在高熵合金基础上发展起来的高熵陶瓷逐渐引起了研究者的广泛关注,其出现为开发高性能的无机非金属材料提供了新的设计思路。本文采用固相法制备了BaMO3基钙钛矿型高熵陶瓷Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3 (x = 0, 2.3%, 5.3%, 8.3%, 11.3%),并研究了Li含量对高熵陶瓷物相结构、微观形貌及介电性能的影响。结果表明,Li含量对陶瓷结构的影响不大,陶瓷均保持立方钙钛矿结构,且无杂相产生;陶瓷的晶粒尺寸相对较均匀。当x = 0时,即B位七元等摩尔比Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li1/7)O3高熵陶瓷,其介电常数达到了最大值2920 (@100 Hz),相较于已报道的不掺Li的六元高熵钙钛矿陶瓷Ba(Ti1/6Sn1/6Zr1/6Hf1/6Nb1/6Ga1/6)O3提升了近50倍。     

Thermoelectric properties of Sn1−x−yTiySbxO2 ceramics

Thermoelectric properties of Sn_1−x−yTi_y Sb_xO₂ ceramics were investigated in detail. The addition of Sb into SnO₂ matrix increased the electric conductivity, σ. The increase in the σ value should be caused by the increase in the carrier concentration. The Seebeck coefficients of all the samples were negative, which means that these samples have n-type conduction. The samples of this study have porous structure. The maximum Z value of all the samples measured in this study was 2.4 × 10⁻⁵ K⁻¹.     

Ti/Mn(0.8-x)SnxIr0.2O2电极的电容性能研究

采用热分解法制备了Ti/Mn_(0.8-x)SnxIr_0.2O_2三元氧化物电极材料。通过扫描电子显微镜,X射线衍射、循环伏安和交流阻抗谱等分析了Ti/Mn_(0.8-x)Sn_xIr_0.2O_2电极材料的组织结构和电容性能。结果表明:随SnO_2含量增加,氧化物涂层中正方结构Mn_3O_4相逐渐减少,正方结构SnO_2相逐渐增加。与锰铱二元氧化物相比,SnO_2的加入可明显改善电极材料在0~0.5 V区间的电流响应,并促进氧化锰活性的发挥,但在一定程度上也抑制了氧化铱的活性。SnO_2的加入也改变了电极材料的电荷转移电阻、弛豫时间常数、以及不同频率下的电容响应速度。相比其它电极材料,Ti/Ir_0.2Mn_0.6Sn_0.2O_2电极材料在低频范围(≤1 Hz)有更好的电容响应和更高的活性,因而获得最高的比电容值。     

Magnetic phase diagrams of the TbRh2−xPdxPdxSi2 and TbRu2−xPdxSi2 systems

The a.c. susceptibility and high field magnetization on TbRh_2−xPd_xPd_xSi₂ and TbRu_2−xPd_xSi₂ compounds were investigated up to 140 kOe. The (T,x) magnetic phase diagrams were determined. For both systems, an increase in the Pd content causes a decrease in the Néel temperature and changes the magnetization curves.