中国照相市场的发展概况

通过对中国照相市场150多年的回顾，简要介绍了摄影术传入中国后，照相市场经历的初步形成、早期发展、大众化普及、彩色化和传统与数字照相共同发展的五个历史时期，叙述了照相市场的新特点和21世纪中国照相市场的发展趋势。     

甲基丙烯酸甲酯的生产与消费

分析世界甲基丙烯酸甲酯的供需关系,预测2011--2015年全球需求量年增长速度3．8％。统计国内的甲基丙烯酸甲酯的生产能力、产量、进出口量,分析了消费结构,提出了发展建议。     

甲基丙烯酸甲酯的生产与消费

分析世界甲基丙烯酸甲酯的供需关系,预测2011—2015年全球需求量年增长速度3.8%。统计国内的甲基丙烯酸甲酯的生产能力、产量、进出口量,分析了消费结构,提出了发展建议。     

环燕公司积极开拓国际市场

鹤壁环燕轮胎有限责任公司(以下简称环燕公司)多年来，视产品质量为企业生命，注重技术攻关，狠抓产品质量，始终坚持“以质取胜、诚信为本、以变应变、适者生存”的发展宗旨，通过管理创新和技术创新，不断提高管理水平和技术水平，以优质的产品、优良的服务和高度的信誉赢得了用     

2014年我国成品油市场分析及展望

从我国的成品油（汽、煤、柴）生产、库存和消费统计数据出发,分析了成品油的市场形势,讨论了外贸形势,提出了对策。     

乙醛市场分析及预测

叙述2012年国内外乙醛的生产商、生产能力、产量、消费量和消费构成,对国内外乙醛市场发展趋势进行了分析和预测。     

环氧树脂价格疯涨,下游企业告急

继双酚A的主要化工原料苯酚反倾销成立以后 ,中华人民共和国商务部在 2 0 0 4年 5月 12日发布了第19号公告 ,决定对从日本、俄罗斯、新加坡、韩国等地进口的双酚A进行反倾销调查 .加上今年国内外石油价格一路攀升 ,促使国内外化工原料行情持续升高 .上述几项原因 ,造成中国双酚     

异丁醛市场分析及预测

叙述2012年国内外异丁醛的生产商、生产能力、产量、消费量和消费构成，对国内外异丁醛市场发展趋势进行了分析和预测。     

己内酰胺市场分析及发展建议

我国自2003年6月6日起对原产于日本、比利时、德国、荷兰和俄罗斯的进口己内酰胺征收反倾销税,为国内己内酰胺的发展创造了条件.对我国己内酰胺产品的市场进行了分析,并提出了发展建议.     

己内酰胺市场分析及发展建议

我国自2003年6月6日起对原产于日本、比利时、德国、荷兰和俄罗斯的进口己内酰胺征收反倾销税,为国内己内酰胺的发展创造了条件。对我国己内酰胺产品的市场进行了分析,并提出了发展建议。     

多晶硅产业现状及发展趋势

介绍多晶硅国内生产企业的现状、市场需求、技术水平以及未来的发展趋势。     

有机硅化合物的生产现状与发展趋势

介绍了世界有机硅合物的生产现状、市场需求及发展前景。指出我国有机硅市场潜力巨大，发展有机硅大有可为，关键要扩大规模，增强实力，开发新产品，积极参与国际竞争。     

我国气相法二氧化硅的生产状况及其应用

气相法二氧化硅是高科技纳米材料。介绍其赋予材料的与众不同的性能,论述发展气相法二氧化硅的重要性,重点分析国内气相法二氧化硅的生产状况、技术状况、存在的问题和市场情况。     

Combustion of silicon powders containing organic additives in nitrogen gas under pressure: 2. Composition of combustion products

Combustion of silicon powders containing organic dopants in nitrogen gas under pressure was found to yield a mixture of α-Si₃N₄, β-Si₃N₄, SiC, and Si₂N₂O. Relative amount of these compounds in combustion product was found to depend on the pressure of nitrogen gas, type and concentration of dopants, combustion geometry, and cooling rate. The formation of α-Si₃N₄ was found to occur in the presence of oxygen-containing dopants. The type of dopant was also found to affect the morphology of product particles.      

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Nitridation behavior of silicon powder compacts of various thicknesses with Y2O3 and MgO as sintering additives

The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y₂O₃ and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si₃N₄ and β‐Si₃N₄ with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High-Temperature Decomposition and Oxidation

Volatility diagrams—isothermal plots showing the partial pressures of two gaseous species in equilibrium with the several condensed phases possible in a system—are discussed for the Si-O and Si-N systems, and extended to the Si-N-O and Si-C-O systems, in which the important ceramic constituents SiO₂, Si₃N₄, Si₂N₂O, and SiC appear as stable phases. Their use in understanding the passiveactive oxidation transitions for Si, Si₃N₄, and SiC are demonstrated.     

有机聚硅氧烷在医药中的应用进展

总结了硅橡胶、硅油、硅树脂在医药中的应用,并介绍了硅烷化技术在药物合成、蛋白质分析检测等生物工程方面的应用和一些新型抗肿瘤、抗癌的含硅药物及多孔硅膜的药物缓释体系的发展。     

Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.