Microstructure and optical characterization of nanometric silicon films prepared by pulsed laser ablation

The effect of laser energy density, during pulsed laser ablation, on the microstructure and optical properties of silicon films has been investigated using techniques such as atomic force microscopy, scanning electron microscopy, X-ray diffraction, and UV–visible absorption/transmission spectroscopy. The thickness of prepared films increases with increase in laser energy density. The crystallite size and hence the crystallinity of prepared films have been estimated by X-ray diffraction and found to be dependent on laser energy density. The transmittance of films changes with laser energy density. The absorption coefficient of films has been found to be?>10⁴?cm^?1 in wavelength region 450–1100?nm. The band gap of silicon films has been determined as 2.27, 2.11, and 1.90?eV corresponding to laser energy density of 1.5, 2.5, and 3.5?J?cm^?2, respectively.     

脉冲激光沉积有机薄膜

脉冲激光沉积(PLD)技术是一门新兴的薄膜制备技术,在无机薄膜的制备和研究方面取得了令人满意的成果,技术也比较成熟.但利用脉冲激光沉积技术制备和研究有机膜方面的工作开展较晚,工作也比较少,尚未形成一个比较系统的体系.因此开展有机薄膜的脉冲激光沉积研究将具有重要的意义.     

激光测距系统中光学屏蔽膜系的研究

针对激光测距系统中光咱成像受电磁波干扰影响测量质量的问题，本文分析了比较了金属光学薄膜与ITO薄膜的光学屏蔽特性。采用磁控反应溅射的方法在关键光学零件表面制备了ITO膜，经过性能测试表明：ITO膜可以满足现代激光测距的光路屏蔽要求。     

激光刻图在制造 a-Si 光伏器件中的应用

描述了在集成型 a-Si 光伏器件的制造中,利用高功率激光束进行刻图的新方法。作为激光刻图中材料除去的模型,被刻蚀材料的蒸汽压对材料除去会带来很大的影响。在制备 a-Si 光伏器件中,侧边接触的器件结构对激光刻图技术是很合适的。激光的平均功率或激励电流,重复频率、焦距和扫描速度是激光刻图技术的基本参数。我们列出了刻蚀 TCO、a-Si 和背电极薄膜的一些刻蚀条件,可以发现要刻蚀不同的薄膜,需控制这些条件以达到最佳化。     

The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition

The preferred (110) oriented aluminum nitride (AlN) thin films have been prepared by pulsed laser deposition on p-Si (100) substrates. The films were characterized with X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscope (AFM). The results indicate that the AlN thin films are well-crystallized when laser energy is higher than 300 mJ/puls. The AFM images show that the surface roughness of the deposited AlN thin films gradually increases with increasing laser energy, but the surface morphologies are still very smooth. The crystallinity and morphology of the thin films are found to be strongly dependent on the laser energy.     

Synthesis of fluorinated diamond films using a laser technique

A laser chemical vapour deposition process for growing fluorinated diamond thin films on two bearing materials, SiC and 440 C stainless steel, is described. The type of laser, carbon feedstock, laser-precursor gas interactions, and deposition conditions have been established. Raman spectroscopy analysis revealed that the films deposited on SiC consisted of a mixture of diamond and graphite, while the films on 440 C steel were composed of diamond, diamond-like carbon and graphite. The feasibility of diamond formation using laser light-gas interactions is explained.     

激光低温沉积金刚石膜

用ＸｅＣｌ紫外与ＣＯ２红外复合激光化学气相沉积方法，在３４０℃硅衬底上沉积成高纯金刚石膜。     

KrF excimer laser crystallization of silicon thin films

A KrF excimer laser operating at 249 nm has been employed to crystallize silicon thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) and by RF magnetron sputtering on Corning glass and SiO₂. All films display a substantial improvement in crystallinity after ELC with the optimum laser fluence for as-deposited ECR films being higher than for sputtered films. This is probably related to the presence of Si-H_x bonds in the former. A pronounced bimodality in the Raman spectra of some amorphous, as-deposited ECR samples has been observed after laser crystallization where, in addition to the peak at 520cm^-1, a strong peak at 509cm^-1 is also present. Such behavior has not been reported previously to our knowledge in ELC silicon films. Interestingly, the XRD spectra of these samples do not exhibit any peaks suggesting the films are composed of nano-grain material. The dehydrogenation of ECR films by ELC has been demonstrated to be substantial, the hydrogen content typically decreasing from ~30 at % in an as-deposited film to ~10 at % after a single low fluence laser shot. Raman spectroscopy has shown that the film bonding changes from predominantly Si-H₂ to Si-H after ELC. Electrical resistivity measurements of phosphorus-doped films show a controllable and repeatable change with laser fluence. The results in this paper show that it is possible to crystallize and controllably change the electrical characteristics of ECR PECVD produced silicon thin films by ELC.     

Laser Induced Periodic Structures on Polymer Surfaces

Subhalf micron (0.2 nm) space and amplitude linear periodic structures and an array of dot images are obtained with the Nd:YAG laser irradiation on Kapton polyimide films, poly(ethylene terephthalate) films, spin-coated polyimide films and others. Different from the excimer laser irradiation, which requires a polarizer, our solid state Nd:YAG laser source provides polarized beams without a polarizer with advantage over excimer laser irradiation. AFM and SEM studies have been carried out. XPS studies of laser exposed areas indicate no significant chemical reactions took place on exposed areas.     

Laser patterning with beam shaping on indium tin oxide thin films of glass/plastic substrate

In this research the laser beam shaper component has been used to obtain top-hat intensity distribution laser beam to perform line scribing and to perform electrode patterning on Indium thin oxide (ITO) thin films deposited on glass and plastic substrate. ITO films were removed with third harmonic Nd:YAG laser processing system. The pulse duration, laser output power, pulse repetition rate and scanning speed parameters of straight line patterning and electrode patterning on different types of substrates were discussed, respectively. The experimental results are measured by optical microscope and scanning electron microscope to evaluate the processing parameters and surface properties of ITO thin films.     

沉积时间对脉冲激光沉积法制备ZnO薄膜性能的影响

采用脉冲激光沉积技术(PLD)在氧气气氛中以高纯Zn为(99.999%)靶材,在单晶硅和石英衬底表面成功生长了ZnO薄膜.通过X射线衍射仪、表明轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了ZnO薄膜的沉积时间对其性能的影响.结果表明,采用PLD法在室温下可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,但室温下沉积的ZnO薄膜的发射性能较差,沉积时间的延长不能改善薄膜的发光性能.     

Low Temperature Synthesis of Diamond Films by CVD of Combined Lasers

Diamond films have been synthesized by means of LCVD through combined effects of a XeCl ultraviolet laser and an infrared CO2 laser. A special apparatus has been developed. The conditions of synthesis and the roles played by both lasers were studied. High-purity diamond films were deposited on Si substrates at 340℃.     

Structural, morphological, and mechanical properties of amorphous carbon and carbon nitride thin films deposited by reactive and ion beam assisted laser ablation

Amorphous carbon nitride thin films have been prepared on Si (100) wafers by nitrogen ion beam assisted Nd:YAG laser ablation techniques. Amorphous carbon and carbon nitride films have also been prepared by the conventional laser ablation techniques for comparison. Raman spectroscopy and spectroscopic ellipsometry have been performed for the films to analyze structural properties, atomic force microscopy to observe surface morphologies, and scratch, acoustic emission, and Vicker hardness test to examine mechanical properties. The amorphous carbon nitride films deposited by the ion beam assisted laser ablation techniques had generally better mechanical properties compared to the amorphous carbon films and amorphous carbon nitride films deposited in N₂ atmosphere. The amorphous carbon nitride films deposited at optimum ion beam current of 10 mA and laser power density of 1.7 × 10⁹ W/cm² showed excellent mechanical properties: root mean square surface roughness of 0.33 nm, friction coefficient of 0.02–0.08, the first crack and critical load of 11.5 and 19.3 N respectively, and Vicker hardness of 2300 [Hv]. It is considered that the films have high potential for protective coatings for microelectronic devices such as magnetic data storage media and heads.     

Dynamics of STO heteroepitaxial growth by pulsed laser deposition

The heteroepitaxial growth dynamics of STO thin films on (100) LaAlO₃ substrate by pulsed laser deposition has been studied. The laser energy density was found to be an important factor to determine the growth mechanics. High laser energy density is benefit to two dimensional layer-by-layer growth. Island growth prevails at low substrate temperature. STO thin films deposited at low oxygen partial pressure showed pellicular square grains. High oxygen partial pressure resulted in spherical STO grains. Step-terrace on substrate surface acts as a preferential nucleation site for adatoms, which leads to step-flow growth. STO thin films with atomic flat surface has been prepared on step-terraced substrate.     

Deposition of CdS thin films onto Si(111) substrate by PLD with femtosecond pulse

The effect of laser fluence (laser incident energy in the range of 0.5-1.5 mJ/pulse with the same laser spot size of 0.5 mm × 0.7 mm) on the structural quality and optical properties synthesized by femtosecond pulsed-laser deposition has been studied. The structural quality and optical properties of the deposited CdS thin films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence measurement. The studies revealed an improvement in the structural quality and optical properties of the CdS thin films with increasing the laser fluence in some range. However, too high laser fluence could lead to the structural quality and optical properties of the CdS thin films to degrade. We defined the optimum laser incident energy was around 1.2 mJ/pulse. And the kinetic energy of the plasma produced by femtosecond laser strongly affects the structure and properties of the deposited CdS thin films.     

Pore formation in thin nickel films under laser irradiation

Porous nickel films have been prepared using irradiation with nanosecond laser pulses, and their microstructure has been studied by transmission electron microscopy. The pores produced in the nickel films by nanosecond laser pulses are shown to be unfaceted and to be located in the grain bulk.     

Thin films of semiconductors and dielectrics produced by laser evaporation

Thin films of several III–V and II–VI compounds as well as of some dielectrics have been vacuum-deposited using a focused beam of a CO₂ or ruby laser to evaporate these materials. The crystallinity, morphology and the chemical composition of the produced thin films have been examined by various analytical methods. Films produced by the ruby laser were in most cases polycrystalline and stoichiometric, while films produced by the CO₂ laser were amorphous and non-stoichiometric. Different mechanisms of evaporation leading to the observed differences in characteristics of thin films are discussed.     

A growth rate, structure and surface morphology study of Si1-x-yGexCy films deposited by ArF-LCVD in tilted geometry

Ge, SiGe, SiC and SiGeC films were grown by ArF-Excimer laser induced chemical vapor deposition. The results demonstrate that in ArF-LCVD a fine and effective control of both the deposition rate, film properties and surface morphology is possible without altering the gas composition and pressure, by changing exclusively the distance between laser beam and substrate surface or by the fact of irradiating or not the films. Different distances have been achieved by tilting the sample 30° with respect to the beam, a geometry simultaneously producing both, an irradiated and a no irradiated zone in the same film.The extensive characterisation of these films was carried out through different techniques in order to see the influence of the irradiation geometry on composition, microstructure and roughness. The evaluation of the deposition rate and the XPS results revealed different growth rate behaviour along the film without considerable variations in composition. AFM proved the small roughness of the films and its strong dependence on the laser beam to substrate distance. Raman spectroscopy and XRD were used to determine the main structural properties. Additional information about surface morphology was also obtained through SEM.For pure Ge, some more studies have been performed due to the tendency of these films to show significant changes, especially in growth rate and roughness, both when the laser irradiated the samples and when temperature, pressure and laser power were varied.     

Characterization of pulsed laser deposited zinc oxide

The pulsed laser deposition of zinc oxide films (ZnO) has been studied as a function of laser wavelength, and substrate temperature. Optical emission spectroscopy of the laser produced plume was used to characterize the deposition process. The deposited films were characterized by X-ray diffractometry, Auger electron spectroscopy, and scanning electron microscopy. Highly textured (002) ZnO films deposited at substrate temperatures of 300 °C with laser wavelengths of 532 nm and 248 nm. However, the energy fluence of 248 nm radiation controls the degree of texturing, allowing highly textured films to be deposited at room temperature.     

Controlling the phase composition of cadmium sulfide films during pulsed laser deposition

Thin cadmium sulfide films grown by pulsed laser deposition on crystalline and amorphous substrates have been shown to consist of a mixture of a cubic (sphalerite structure) and a hexagonal (wurtzite structure) phase. We have demonstrated the possibility of controlling the percentages of the hexagonal and cubic phases in cadmium sulfide films by varying pulsed laser deposition parameters. Varying the deposition parameters allows one to control the optical and structural parameters and surface morphology of thin cadmium sulfide films.