离子注入制备SixMn1-x稀磁半导体的X射线衍射

把1×1016/cm2的200 kev Mn离子注入p型Si单晶(100)片中,在N2气氛下进行600℃、700℃、800℃和900℃退火,制得SixMn1-x稀磁半导体.用同步辐射X射线衍射技术研究样品结构,发现Mn的注入和退火导致了Si结晶颗粒的产生,随退火温度升高,间隙位的Mn原子逐渐减少,替代位的Mn原子增加,同时晶格发生膨胀.间隙位和替代位Mn原子间的相互作用导致样品的铁磁性增强.     

电流型碳化硅探测器

本文从电流型半导体探测器的起源、传统电流型探测器在应用中的问题出发,论述了国内外在新型半导体探测器研制和电流型半导体探测器的研究现状。对半导体探测器结构和物理特性进行了研究,并重点介绍了电流型碳化硅(SiC)探测器的设计制作、响应性能研究、抗辐照性能研究等内容,为电流型半导体探测器的研究和应用提供参考。     

电流型碳化硅探测器

本文从电流型半导体探测器的起源、传统电流型探测器在应用中的问题出发，论述了国内外在新型半导体探测器研制和电流型半导体探测器的研究现状。对半导体探测器结构和物理特性进行了研究，并重点介绍了电流型碳化硅（SiC）探测器的设计制作、响应性能研究、抗辐照性能研究等内容，为电流型半导体探测器的研究和应用提供参考。     

PMOS剂量计的长期室温退火

为掌握ＰＭＯＳ剂量计的应用方式并提高其应用精度，研究了ＰＭＯＳ剂量计的辐照剂量记录－阈电压在室温下的长期退火表现。结果表明：氧化物电荷的隧道退火与界面态的后生长效应是造成退火的原因，ＰＭＯＳ剂量计辐照及贮藏偏置是决定其退火方向和程度大小的重要因素。负偏置条件能较好地保持其辐照记录，在正偏置贮存下的退火较大。     

块体非晶合金Zr55Cu30Al10Ni5玻璃转变温度附近晶化的同步辐射X光小角散射研究

应用同步辐射X光小角散射法对块体非晶合金Zr55Cu30Al10Ni5在玻璃转变温度附近的晶化进行研究。实验表明：在400—442℃的退火温度范围内,样品中已有结晶颗粒析出,析出颗粒的大小差别不明显,但析出颗粒的数量与退火温度及退火时间有关。退火时间一定时,析出的颗粒数量随退火温度的升高而增多：退火温度一定时,析出的颗粒数量随退火时间的增加而增多。     

应用于空间系统的Power MOSFET辐射响应特性

为给金属氧化物半导体场效应功率管（Power MOSFET）在航天系统中的应用提供辐照数据基础和依据。用60^Co源对将应用于空间系统的两种Power MOSFET进行了不同总剂量的辐照实验。从微观氧化物陷阱电荷和界面态的辐射感生角度，分析了Power MOSFET器件在60^Co γ，射线辐射下的总剂量和剂量率效应以及辐照后70℃退火特性。试验表明与N沟道Power MOSFET相比，P沟道Power MOSFET可能更适合空间应用。     

NiTiNb形状记忆合金的组织研究

应用金相显微镜、X射线衍射仪和透射电子显微镜研究了NiTiNb形状记忆合金的组织特征。结果表明,对于850℃热轧的合金,合金存在织构, 基体是立方结构的NiTi相, 沉淀相主要是b-Nb相;850℃热轧后再在850℃ 1h退火,合金中的织构依然存在,基体还是立方结构的NiTi相,沉淀相却为b-Nb相、单斜Ti2Ni3相,其中b-Nb相占多数。最后指出,经过850℃热轧后,在850℃1h退火合金已开始再结晶。     

半导体探测器及其在空间科学中的应用

阐述了空间辐射环境监测的意义，描述了由半导体探测器组成的望远镜系统在空间科学中的应用，并给出了已成功应用在卫星上进行地球辐射带的辐射环境监测的部分结果。     

最终退火温度对N36合金管材微观结构和性能的影响

为了对N36合金管材的微观结构和应用性能进行优化和调控,通过分析不同最终退火温度（520～560℃）下N36合金管材的性能数据,研究了最终退火温度对N36合金管材微观结构和性能的影响。经过研究发现,不同最终退火温度对于N36合金管材中的第二相粒子影响不大,主要影响N36合金管材的再结晶程度和晶粒尺寸,最终退火温度越高,则N36合金管材的再结晶程度越高,晶粒尺寸越大。随着最终退火温度升高,N36合金管材的室温和高温轴向和环向的强度明显降低,同时延伸率明显升高,主要是最终退火工艺对N36合金管材再结晶程度和晶粒尺寸的影响所造成的。随着最终退火温度升高,N36合金管材耐腐蚀性能提高,560℃最终退火温度的N36合金管材耐腐蚀性能明显优于其他管材,主要是560℃最终退火温度的N36合金管材再结晶程度最高所造成的。     

离子注入微型半导体探测器的研制

国际上最早使用的微型探测器是盖革-缪勒计数器,并用它首次对活体内的肿瘤进行了测试。六十年代以来,它逐步为半导体探测器所代替。七十年代以来,微型半导体探测器已广泛地用于血流动力学、肺功能研究以及食管、胃和眼睛等体内和体表器官的诊断。我们也曾用半导体硅探测器对甲状腺节结进行过测试,效果良好。     

Enhancement of luminescence from encapsulated Si nanocrystals in SiO2 with rapid thermal anneals

Potentialities of rapid thermal annealing to enhance the photoluminescence emission of Si nanocrystals in SiO₂ have been investigated. Ion implantation was used to synthesize specimens of SiO₂ containing excess Si with different concentrations. Si precipitation to form nanocrystals in implanted samples takes place with a conventional furnace anneal. The photoluminescence intensity and the peak energy of emission from Si nanocrystals depend on implanted ion fluence. Moreover, the luminescence intensity is strongly enhanced with a rapid thermal anneal prior to a conventional furnace anneal. The luminescence intensity, however, decreases with a rapid thermal anneal following a conventional furnace anneal. It is found that the order of heat treatment is an important factor in intensities of the luminescence. Moreover, the luminescence peak energy is found to be dependent, but a little, on thermal history of specimens. Based on our experimental results, we discuss about the mechanism of an enhancement of the photoluminescence, together with the mechanism of photoemission from encapsulated Si nanocrystals produced in a SiO₂ matrix by ion implantation and annealing.     

Thin relaxed SiGe layer grown on Ar^＋ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

1 Introduction Relaxed SiGe layers have gained considerable attention due to their applications in strained Si/SiGe high electron mobility transistor, metal-oxide-semi- conductor field-effect transistor (MOSFET) and other devices. High-quality relaxed SiGe templates, espe- cially those with low threading dislocation density and smooth surface, are crucial for the electrical perform- ance of devices.[1,2] In order to realize high-quality relaxed SiGe layer with such good characteristics, …     

Ion beam induced amorphization and recrystallization of Si/SiC/Si layer systems

Epitaxial, buried silicon carbide (SiC) layers have been fabricated in (100) and (111) silicon by ion beam synthesis (IBS). In order to study the ion beam induced epitaxial crystallization (IBIEC) of buried SiC layers, the resulting Si/SiC/Si layer systems were amorphized using 2 MeV Si²⁺ ion irradiation at 300 K. An unexpected high critical dose for the amorphization of the buried layers is observed. Buried, amorphous SiC layers were irradiated with 800 keV Si⁺ ions at 320 and 600°C, respectively, in order to achieve ion beam induced epitaxial crystallisation. It is demonstrated that IBIEC works well on buried layers and results in epitaxial recrystallization at considerably lower target temperatures than necessary for thermal annealing. The IBIEC process starts from both SiC/Si interfaces and may be accompanied by heterogenous nucleation of poly-SiC as well as interfacial layer-by-layer amorphization, depending on irradiation conditions. The structure of the recrystallized regions in dependence of dose, dose rate, temperature and crystal orientation is presented by means of TEM investigations.     

低束流钕离子注入外延硅薄层的结构研究

采用金属蒸气真空弧(MEWA)离子源以低束流方式将Nd离子注入到外延硅片中，经高温快速退火处理，制备了结晶良好的钕硅掺杂层。用扫描电子显微镜(SEM)、反射式高能电子衍射(RHEED)和X射线衍射(XRD)分析了在不同退火条件下样品注入层相结构的变化。研究结果表明，经高温热处理，注入层形成结晶良好的钕硅化合物，出现由Nd5Si4相向NdSi相转变的趋势。并对其转变过程进行了初步探讨。     

Influence of UV irradiation and RTA process on optical properties of Si implanted SiO2

Si ion implantation was widely used to synthesize specimens of SiO₂ containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluence of 7.5 × 10¹⁶ ions/cm². The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing (FA). Photoluminescence spectra were measured at various stages at the process. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. Moreover, effective visible photoluminescence which is not observed with a simple FA treatment, is found to be observed even after FA at 900 °C, only for specimens treated with excimer-UV lamp and RTA. Based on our experimental results, we discuss the effects of excimer-UV lamp irradiation and RTA process on Si nanocrystals related photoluminescence.     

Morphological evolution of films composed of energetic and size-selected silver nanocluster ions

In this study, morphologies of as-deposited and rapid thermal annealed films of silver nanoclusters are studied using scanning electron microscope (SEM) and atomic force microscope (AFM). Size-selected silver nanoclusters, containing 5000 atoms in a cluster, produced by the gas condensation method are deposited on Si substrate for a period of 8 min. In order to get an idea about the melting of clusters, the film is treated by rapid thermal annealing at 200 and 400 °C. The remarkable changes of morphology due to annealing signify a lowering of melting temperature of silver in the form of nanoscale particles.     

A study of the blue photoluminescence emission from thermally-grown, Si-implanted SiO2 films after short-time annealing

Thermal SiO₂ films have been implanted with Si⁺ ions using double-energy implants (200 + 100 keV) at a substrate temperature of about −20°C to total doses in the range 1.6 × 10¹⁶−1.6 × 10¹⁷ cm⁻² followed by short-time thermal processing, in order to form a Si nanostructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a function of ion dose, manner of heat treatment, anneal time and anneal temperature. For the formation of blue PL emitting centres, optimum processing conditions in terms of excess Si concentration and overall thermal budget are mandatory. The nature of the observed blue emission is discussed.     

Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si

FeSi₂ precipitates with various structural properties embedded within silicon matrix were formed by iron ion implantation using a metal vapor vacuum arc ion source followed by thermal annealing at various conditions. The microstructure and phase properties of the implanted samples were studied by transmission electron microscopy. The orientation relationships and thus the interfacial coherence between the FeSi₂ precipitates and the Si matrix were observed to change with the annealing conditions. A good correlation is identified in-between the structural properties and the photoluminescence properties of these samples.     

Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge ion implanted layers in silicon

Solid phase epitaxial growth (SPEG) of amorphous SiGe layers in Si has been investigated. The amorphous layers were formed by 40 keV ⁷⁴Ge⁺ ion implantation in Si(100) single crystals with doses giving 22 at.% Ge at the maximum of the ion implanted distribution of Ge. SPEG of the amorphous layers was achieved by either thermal SPEG or a combination of thermal SPEG and ion-beam induced crystallisation (IBIC). The crystal quality of the layers was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. Fully crystallised SiGe alloy layers were obtained by annealing in a furnace at 550°C for 60 min or at 850°C for 20 min. However, the SiGe alloy layers contain extended defects formed at the relaxation of the built-in strain in the alloy layer. When the combination of thermal SPEG and IBIC was used for the SPEG very few of these defects were formed.     

Enhancement of ferromagnetism in Ni-implanted HfO2 dielectric thin films

We report thermal annealing and 100 MeV Si⁸⁺ swift heavy ion irradiation effects on the structural and magnetic properties of Ni-implanted HfO₂ thin films. At low Ni doping concentration (∼1%), HfO₂ thin films show ferromagnetic behavior. We clearly demonstrate the cluster free nature of our film using cross-sectional high resolution transmission microscopy and magnetization vs. temperature data. Rutherford backscattering spectrometry is used to estimate the film thickness and to establish that Ni-ions are placed in the HfO₂ matrix. By comparing the results for the annealed and swift heavy ion irradiated samples, it is concluded that the enhancement in magnetic signal is closely related to the dispersion/diffusion of implanted Ni and defect creation such as oxygen vacancies. The results of magnetic force microscopy supported the observation of room temperature ferromagnetism in Ni-implanted HfO₂ films.