全球信息栅格信息保障(上)

全球信息栅格(GIG)是美军正在建设的重要基础设施,也是美军成功实施网络中心战的关键.本文主要介绍了美军GIG信息保障的目标及重要举措,包括出台信息保障战略计划、制定信息保障政策、在GIG体系结构中融入信息保障、实施深度防御策略、重视日常工作.     

全球信息栅格通信能力建设研究

全球信息栅格(GIG)是美军全力打造的军事电子信息系统,是未来网络中心战的基础.深入研究全球信息橱格对提高我军信息化水平,推进以信息技术革命为主体的新军事变革,具有十分重要的意义.从全球信息栅格概念、发展规划、体系结构入手,重点对GIG通信能力建设进行研究,深入分析了GIG通信体系结构参考模型,并与传统OSI模型进行比较;研究了GIG通信基础设施建设和通信信息安全建设.最后,给出了GIG对军队信息化建设的几点启示.     

美军全球信息栅格黑核加密技术发展研究

全球信息栅格(GIG)是美军目前最庞大的一项信息基础设施,是美军实现网络中心战,完成军事革命的重要推动器。GIG是各种组织机构和军兵种构建的网络之网络,这些网络相互之间如何实现保密通信是美军一直在探索的问题。黑核加密技术是美军发展全球信息栅格(GIG)所必需的13种关键技术之一,它对美军实现GIG信息保证具有十分重要的意义,为此,美军开展了积极且深入的研究。文中概述了美军GIG黑核技术的研究背景、发展现状及面临的挑战,最后提出了一些思考。     

美军GIG3．0进展研究

全球信息栅格（GIG）是美军正在建设的重要基础设施,是美军实现网络中心战而制定的最优先计划。文章跟踪了GIG的发展历程,在分析GIG2．0缺点的基础上,引出GIG3．0的几个关键点和重要概念,包括作战网络域、敏捷虚拟飞地、虚拟安全飞地等。GIG3．0立足于以作战司令部为中心的赛博空间作战,通过MPLS、IPSEC、GRE、虚拟化等重要技术构建穿越不同军事网络的虚拟安全飞地,同时,用户客户端也支持对不同安全等级军事网络的访问,这使得美军的网络化作战能力得以安全、高效地实施。     

联合信息环境JIE 及其安全研究

全球信息栅格(GIG)是美军为网络中心战建设的重要基础设施,而联合信息环境(JIE)是美军基于安全性考虑,对整个GIG重新设计而提出的,它将成为GIG的下一代战略储备。文中跟踪了JIE的研究进展,挖掘出美军提出JIE的深层原因,分析了JIE的特点、关键建设领域、理想的终极状态。同时,对JIE的统一的安全体系结构和统一的身份和访问管理解决方案进行了剖析,文中最后全面深入地研究了JIE的安全功能。     

美军GIG信息安全保证框架初探

本文阐述了美军全球信息栅格(GIG)信息保障的框架和建设内容。借鉴美军的经验,提出了对我国(军)信息保障系统建设的看法。     

基于HAIPE的GIG组网体制分析

美军GIG应用HAIPE通过黑核模式构建了栅格化网络,打破了原有信息系统的信息孤岛状态,实现了互操作,被美军视为保证其未来高科技战争中信息优势的根本。文章介绍了GIG的发展过程和现状,并分析了GIG组网体制和组网模式、以及HAIPE组网关键技术。     

美军HAIPE加密技术原理与分析

HAIPE是美国国家安全局在美军全球信息栅格(GIG)中强制要求使用的加密方式,用以保障美军在IP化GIG中的通信安全,GIG中所有网络节点都必须遵循其规范。首先对HAIPE进行简介,然后进一步详细描述其要求的硬件架构和网络结构以及完整的通信流程,并介绍了其同侪发现与路由和密钥管理及交换等关键技术,最后分析了HAIPE技术的优势及缺点。     

全球信息栅格信息保障(下)

在GIG体系结构中融入信息保障 为了确保GIG信息保障,美国国防部需要开发确保GIG安全的标准化体系结构概念——在GIG基本框架中融入信息保障.GIG体系结构的信息保障结构是利用重要的美国防部信息保障战略和研究成果,描述实现美国国防部安全企业体系结构的构想,并获得互操作能力和安全的蓝图需要的系统工程.     

体系对抗的发展方向——GIG对抗

美军为了适应网络中心战的要求,实现全球打击战略,在2000年就启动了全球信息栅格（GIG）计划。给出了GIG定义及其发展目标,分析了GIG体系结构和特征,找出了其薄弱环节,对GIG的对抗提供了参考。     

Switching in m.i.s.m. and m.i.s.i.m. structures

Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching.     

GaAs m.a.o.s.f.e.t. memory transistor

A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.     

Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given.     

U.H.F. low-noise GaAs m.e.s.f.e.t. amplifier for colour t.v. broadcasting translator

Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor.     

Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.     

Wide-range monolithic bipolar?j.f.e.t. c.c.o.

A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage.     

V.H.F. and u.h.f. Gunn-effect oscillators

In this letter, the use of the Gunn device as a broadband negative resistance, somewhat analogous to a tunnel diode, is explored. v.h.f. and u.h.f. oscillators are described; the frequency is determined by an external resonant circuit and is very nearly independent of the parameters of the Gunn-effect sample.     

Power m.o.s.f.e.t. linear h.f. amplifiers

N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors.     

More active RC filters using the d.v.c.c.s./d.v.c.v.s.

Novel configurations using a differential-voltage-controlled current source, differential-voltage-controlled voltage source (d.v.c.c.s./d.v.c.v.s.) as the active building block are described. The configurations assume that the active building block is divided into two independent parts initially.     

New n-channel m.o.s.f.e.t.s

By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described.