太赫兹脉冲能量测量

利用太赫兹波的单啁啾脉冲电光探测技术,通过调节实验装置中λ/4波片晶轴与探测激光线偏振方向成45°,可以巧妙地得到太赫兹波的绝对电场强度.利用CCD阵列,通过抽运探测的方法可以得到太赫兹脉冲的光斑尺寸,进而在两步实验的基础上计算得到太赫兹脉冲的能量.提供了一种行之有效的测量太赫兹脉冲能量的实验方案.     

光电导太赫兹天线效率参数的讨论

光电导天线是产生太赫兹波最常用的器件之一,但是目前它面临的主要问题是天线效率很低,难以获得高功率的太赫兹波.为了提高其输出功率和效率,介绍了计算光电导天线效率的公式,讨论了影响光电导天线光-太赫兹转换效率的参数:与激光源相关的参数如激光强度、脉冲宽度、激励光斑尺寸及位置;与光电导天线相关的参数如偏压电场、天线材料和几何结构、天线暗电阻率、基底材料等.这对光电导太赫兹天线的分析与设计也是大有裨益的.     

基于飞秒激光的太赫兹辐射增强技术研究

太赫兹波是介于微波和红外之间的一种还未被完全开发的电磁波,由于其穿透性强、频谱宽以及空间分辨率高等特点,基于飞秒激光的太赫兹技术已经广泛的应用于现代军事战争及民用领域,而获得高能量的太赫兹辐射源是太赫兹技术发展的前提基础。本文提出了两种新型的增强太赫兹辐射强度的方法,通过波前调制改变飞秒激光的入射光波长以及周围的气体环境来实现太赫兹辐射强度的增强,为今后太赫兹技术在军事等领域的应用发展提供了一定的基础。     

InSb光电导太赫兹源材料性质及辐射场研究

为了研究锑化铟(InSb)半导体材料光电导太赫兹辐射过程,用数值计算方法分析材料内载流子迁移率和表面电流,以及不同性质抽运激光器对太赫兹波近场强度的影响,用宏观电磁场理论和微观半导体理论分析材料表面电流,比较了InSb和GaAs材料的太赫兹波功率谱曲线。结果表明,InSb材料载流子弛豫时间越长,载流子迁移率越大;表面电流与载流子寿命和弛豫时间成正比;宏观电磁场理论更适于分析表面电流;抽运激光饱和能量密度越大,太赫兹近场辐射强度越强;抽运激光脉冲宽度越短,太赫兹近场辐射强度越强;InSb光电导辐射太赫兹波功率比GaAs高。该结果为基于InSb光电导太赫兹辐射源的研究奠定了一定的基础。     

微纳复合结构增强硅基太赫兹调制器性能

研究了由微米金字塔阵列和纳米级氧化铝(Al2O3)薄膜构成的微纳复合结构对硅基光控太赫兹调制器调制性能的增强效应和机制。实验表明,相对于半导体硅片,硅表面的微米金字塔阵列能够显著减少激光反射率,提高对激光的利用率,且能增加太赫兹波的调控面积。更重要的是,金字塔阵列上沉积的纳米级厚度Al2O3薄膜还能进一步降低激光反射率,并能明显提升太赫兹波的调制效果,在95.5 mW/mm2的激光功率密度下,其调制深度可达91.2%。该光控太赫兹调制器在低激光功率下拥有高调制深度,在太赫兹成像和通信领域都有巨大的应用潜力。     

基于频率梳的太赫兹辐射功率密度测量

为实现太赫兹辐射特性精准认知,开展太赫兹辐射功率密度测量研究.通过光学频率梳产生太赫兹频率梳,利用太赫兹频率梳实现太赫兹辐射源空间辐射功率密度测量.本文利用电光采样和光电导探测两种方式,实现了100 GHz辐射源空间辐射功率密度测量;将100 GHz辐射总功率溯源到标准太赫兹功率计,实现太赫兹辐射功率密度绝对测量.分析比较了利用800 nm空间光进行电光采样和利用1 550 nm光纤激光进行光电导探测的测量结果.在不同距离下,对太赫兹辐射源的空间辐射功率密度进行了测量和量值溯源,实验揭示了太赫兹辐射传输的空间演化特性.     

337μm连续太赫兹激光透射成像

针对太赫兹面阵探测器件发展不成熟的现状,利用二维移动平台,对合作目标进行了连续太赫兹波的扫描成像实验.太赫兹波的扫描成像结果可以显示遮蔽物内的物件,这是可见光和红外所不能完成的.通过减小激光光斑、提高成像分辨率,可更清晰地表现隐藏物件的轮廓,有助于辨别该物件.实验还测量了337μm太赫兹激光对典型物质的穿透特性,其中包括对近红外和中红外具有很好屏蔽作用的伪装网材料.测量结果显示:337μm太赫兹激光对包装泡沫穿透能力很强,适合包装物的无损检查;对干枯树叶和新鲜树叶透射差别较大,对野外探测具有启示意义;对某些伪装网具有一定的穿透能力,为某些军事应用提供了可能.     

激波管等离子体中太赫兹波传输特性仿真与实验研究

研究了太赫兹波在透射波窗口封闭的激波管中的等离子体中的传输特性,获得了传输衰减量随等离子体电子密度、碰撞频率、透波窗口材料以及电磁波频率的变化规律,并比较了相同条件下毫米波的传输特性.利用激波管为实验平台模拟产生高速飞行器等离子体,开展了太赫兹波在等离子体中传输特性实验.结果表明,太赫兹波在相同电子密度和碰撞频率的等离子体中衰减量比毫米波小得多;随着等离子体碰撞频率的增加,太赫兹波传输衰减量先增加后减小,透波窗口增加了太赫兹波的传输衰减;随着窗口材料的介电常数增加,太赫兹波反射率增加,太赫兹波传输衰减曲线出现周期性振荡,振荡周期约5 GHz;太赫兹波通信可能作为一种解决再入飞行器黑障问题的有效技术途径.     

相对论飞秒激光与微结构靶相互作用增强太赫兹波产生的数值模拟研究

为了增强相对论飞秒激光与固体靶相互作用下太赫兹波的产生,提出了前端锥形开口的纳米丝靶结构,并通过胞中粒子法(Particle-In-Cell)数值模拟,研究了该结构对太赫兹波产生的影响,还与普通结构的纳米丝靶所产生的太赫兹波结果进行了对比。结果显示,前端锥形开口的纳米丝靶结构能够明显增强太赫兹波的产生,在探测点位置得到了比普通纳米丝靶中的太赫兹波电场强3倍的结果。最后详细分析了不同靶型结构影响太赫兹波产生的物理因素,发现不同靶型结构通过影响入射激光的吸收与反射,进而影响靶后超热电子的能量与数目。上述研究结果将有助于推动强场太赫兹波领域的发展,为实验研究提供方案和数据支撑。     

离轴涡旋光束诱导空气等离子体产生太赫兹波

使用涡旋光束代替高斯光束作为产生光源,研究了涡旋光束产生太赫兹波的过程。探究了具有不同拓扑荷数的涡旋光束在产生太赫兹波时的差异,相位奇点的位置对产生太赫兹波的影响,不同脉冲强度和激光波长下涡旋光束产生的太赫兹波能量、频谱和偏振的变化。结果表明,产生的太赫兹波强度会随涡旋光束拓扑荷数的变化而变化,并且与涡旋中心的位置密切相关。涡旋光束所产生的太赫兹波随脉冲强度和激光波长的变化趋势与高斯光束一致。高斯光束与涡旋光束产生的太赫兹波在频谱和偏振上的变化趋势一致。     

Terahertz radiation of a butterfly-shaped photoconductive antenna (invited)

The terahertz(THz) far-field radiation properties of a butterfly-shaped photoconductive antenna (PCA) were experimentally studied using a home-built THz time-domain spectroscopy(THz-TDS) setup. To distinguish the contribution of in-gap photocurrent and antenna structure to far-field radiation, polarization-dependent THz field was measured and quantified as the illuminating laser beam moved along the bias field within the gap region of electrodes. The result suggests that, although the far-field THz radiation originates from the in-gap photocurrent, the antenna structure of butterfly-shaped PCA dominates the overall THz radiation. In addition, to explore the impact of photoconductive material, radiation properties of butterfly-shaped PCAs fabricated on both low-temperature-grown GaAs(LT-GaAs) and semi-insulating GaAs(Si-GaAs) were characterized and compared. Consistent with previous experiments, it is observed that while Si-GaAs-based PCA can emit higher THz field than LT-GaAs-based PCA at low laser power, it would saturate more severely as laser power increased and eventually be surpassed by LT-GaAs-based PCA. Beyond that, it is found the severe saturation effect of Si-GaAs was due to the longer carrier lifetime and higher carrier mobility, which was confirmed by the numerical simulation.     

光电导天线太赫兹波辐射特性研究进展

太赫兹科学技术已经成为当前电磁领域研究的热点,太赫兹波的产生是其关键技术,光电导天线(PCA)是目前产生宽频太赫兹波的重要手段。根据光电导天线太赫兹波的辐射特性的文献报道,对光电导天线产生太赫兹波的耦合输出效率、辐射场型、极化特性等研究进展做了较全面的评述,并针对光电导天线辐射特性对光电导天线应用的意义进行了探讨和展望,以期对光电导天线产生太赫兹波的研究和应用提供参考。     

用飞秒激光触发GaAs光电导体产生THz电磁波的研究

报道了用半绝缘GaAs材料研制的光电导偶极天线在飞秒激光脉冲触发下辐射THz电磁波的实验结果.GaAs光电导偶极芯片的两个欧姆接触电极间隙为3mm,采用Si3N4薄膜绝缘保护,在540V直流偏置下被波长800nm,脉宽14fs,重复频率75MHz,平均功率130mW的飞秒激光脉冲触发时产生THz电磁波.用电光取样测量得到了THz电磁脉冲的时域波形和频谱分布.THz电磁波的辐射峰值位于0.5THz左右,频谱宽度大于2THz,脉冲宽度约为1ps.     

Photonic Narrow Linewidth GHz Source Based on Highly Codoped Phosphate Glass Fiber Lasers in a Single MOPA Chain

We present the first demonstration of a fiber pumped source of coherent gigahertz (GHz) radiation based on parametric processes. The GHz source is compact, and pumped by two Q-switched highly codoped phosphate all-fiber lasers in a fusion-spliced master oscillator power amplifier chain at eye safe C-band wavelengths, with a GaSe crystal used for difference-frequency generation. The final stage used a novel highly codoped phosphate glass fiber that was only 12 cm long, and scaled the peak power of the narrow linewidth fiber laser to more than 4 kW. The generated GHz radiation at 270 GHz has a peak power of 48.1 muW, corresponding to a peak power spectral density of ~1.2 W/THz with an estimated linewidth of 40 MHz.     

双波长波片导致的脉冲分离对双色场辐射太赫兹波的影响

由于群速度的偏振依赖性,飞秒激光脉冲入射到双波长波片时出射光脉冲会分离为两个具有一定时间延迟的飞秒激光脉冲。从实验和理论模拟两方面研究了双波长波片导致的脉冲分离现象对飞秒激光双色场成丝辐射太赫兹(THz)波效率的影响。实验结果表明,脉冲分离导致的时间延迟会降低双色场辐射THz波的效率,可通过零级双波长波片缩短分离脉冲之间的时间延迟,有效提高THz波的产生效率。     

产生太赫兹辐射源的Nd:YAG双波长准连续激光器

产生太赫兹波辐射的方法可分为电子学和光子学两大类.在光子学领域,非线性光学差频方法是获取高功率、低成本、便携式、室温运转太赫兹波的主要方法之一.实验研究了激光二极管(LD)端面抽运Nd:YAG1319 nm/1338 nm双波长准连续线偏振运转激光器,理论计算了输出双波长在非线性晶体DAST(4-N,N-dimethylamino-4'-N-'methyl-stilbazolium tosylate)中差频产生太赫兹辐射的平均功率.在重复频率50 kHz时,双波长激光平均输出功率达到2.22 W,斜率效率12.72%,线偏振度0.983,脉冲宽度71.91 ns.M2因子仅为1.165,不稳定性小于0.487%.根据非线性差频理论,计算出可在1 mm厚DAST晶体中获得4.71 mw的3.23 THz高相干性太赫兹波辐射.这两条非常接近的谱线为进一步通过非线性光学差频方法获得高相干性太赫兹波提供了理论基础.     

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.     

Dielectric Structure with Periodic Strips for Increasing Radiation Power of Photoconductive Antennas: Theoretical Analysis

Low terahertz (THz) radiation power and low efficiency are the well-known drawbacks of photoconductive antennas (PCAs). To increase THz-radiation power of PCAs, a dielectric structure with periodic low-temperature-grown GaAs strips is proposed. Transmitted power of the proposed structure is obtained from a theoretical model, and further confirmed by finite element simulations. Results show that the structure is capable to transmit into the substrate 90 % of the power of transverse magnetic wave with wavelength as wide as from 0.7 to 1.0 μm. Favorability of this property gets amplified when power transmission in a wide range of frequency bandwidth is desired, e.g., for optical pulse with short duration time incident to PCA, which generates carriers in the semiconductor that create THz emission. Furthermore, the proposed dielectric structure with periodic strips, the whole structure placed in between electrodes of PCA is considered, and analyzed by the existing photoconductive antenna equivalent circuit model, to see how power radiation changes. Interestingly, THz-radiation power enhancements of 70 and 20 % are evinced for, respectively, 20 and 150 mW incident optical powers as instances, as compared to PCA without strips in the gap area.     

低温生长砷化镓光电导天线产生太赫兹波的辐射特性

研究了低温生长砷化镓光电导天线(LT-GaAs PCA)产生太赫兹(THz)波的辐射特性。利用太赫兹时域光谱(TDS)技术测量了光电导发射极在飞秒激光作用下辐射的太赫兹脉冲,得到了时域发射光谱,并通过快速傅里叶变换(FFT)得到相应的频域光谱。结果表明,低温砷化镓光电导天线产生的太赫兹波信号比飞秒激光激发半导体表面产生的太赫兹波信号具有更高的强度和信噪比;太赫兹波信号与光电导天线的偏置电压成线性关系;随着抽运激光功率的增强,太赫兹波信号增大并出现饱和。     

Semiconductor Diode Lasers for Terahertz Technology

We discuss different concepts for generating terahertz (THz) radiation with semiconductor diode lasers. Photomixing enables the generation of continuous wave THz radiation by difference frequency generation of two lasers or of two-colour lasers. Pulsed THz radiation for time domain THz spectroscopy is generated with modelocked diode laser systems including amplification and chirp compression. Finally, we analyse the concept of quasi time domain spectroscopy based on broadband diode laser systems.