Patterned Arrays of Functional Lateral Heterostructures via Sequential Template‐Directed Printing

The precise integration of microscale dots and lines with controllable interfacing connections is highly important for the fabrication of functional devices. To date, the solution‐processible methods are used to fabricate the heterogeneous micropatterns for different materials. However, for increasingly miniaturized and multifunctional devices, it is extremely challenging to engineer the uncertain kinetics of a solution on the microstructures surfaces, resulting in uncontrollable interface connections and poor device performance. Here, a sequential template‐directed printing process is demonstrated for the fabrication of arrayed microdots connected by microwires through the regulation of the Rayleigh–Taylor instability of material solution or suspension. Flexibility in the control of fluidic behaviors can realize precise interface connection between the micropatterns, including the microwires traversing, overlapping or connecting the microdots. Moreover, various morphologies such as circular, rhombic, or star‐shaped microdots as well as straight, broken or curved microwires can be achieved. The lateral heterostructure printed with two different quantum dots displays bright dichromatic photoluminescence. The ammonia gas sensor printed by polyaniline and silver nanoparticles exhibits a rapid response time. This strategy can construct heterostructures in a facile manner by eliminating the uncertainty of the multimaterials interface connection, which will be promising for the development of novel lateral functional devices.     

MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field‐Effect Transistors and Inverter Circuits

2D transition metal dichalcogenides are promising channel materials for the next‐generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS₂) few layers and organic crystal – 5,6,11,12‐tetraphenylnaphthacene (rubrene). In this work, ambipolar field‐effect transistors are successfully achieved based on MoS₂ and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm² V^?1 s^?1, respectively. The ambipolar behavior is explained based on the band alignment of MoS₂ and rubrene. Furthermore, being a building block, the MoS₂/rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of ?26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.     

High‐Throughput Near‐Field Optical Nanoprocessing of Solution‐Deposited Nanoparticles

The application of nanoscale electrical and biological devices will benefit from the development of nanomanufacturing technologies that are high‐throughput, low‐cost, and flexible. Utilizing nanomaterials as building blocks and organizing them in a rational way constitutes an attractive approach towards this goal and has been pursued for the past few years. The optical near‐field nanoprocessing of nanoparticles for high‐throughput nanomanufacturing is reported. The method utilizes fluidically assembled microspheres as a near‐field optical confinement structure array for laser‐assisted nanosintering and nanoablation of nanoparticles. By taking advantage of the low processing temperature and reduced thermal diffusion in the nanoparticle film, a minimum feature size down to ≈100 nm is realized. In addition, smaller features (50 nm) are obtained by furnace annealing of laser‐sintered nanodots at 400 °C. The electrical conductivity of sintered nanolines is also studied. Using nanoline electrodes separated by a submicrometer gap, organic field‐effect transistors are subsequently fabricated with oxygen‐stable semiconducting polymer.     

Self‐Assembled Monolayers as Patterning Tool for Organic Electronic Devices

The patterning of functional materials represents a crucial step for the implementation of organic semiconducting materials into functional devices. Classical patterning techniques such as photolithography or shadow masking exhibit certain limitations in terms of choice of materials, processing techniques and feasibility for large area fabrication. The use of self‐assembled monolayers (SAMs) as a patterning tool offers a wide variety of opportunities, from the region‐selective deposition of active components to guiding the crystallization direction. Here, we discuss general techniques and mechanisms for SAM‐based patterning and show that all necessary components for organic electronic devices, i.e., conducting materials, dielectrics, organic semiconductors, and further functional layers can be patterned with the use of self‐assembled monolayers. The advantages and limitations, and potential further applications of patterning approaches based on self‐assembled monolayers are critically discussed.     

Electrical probing of submicroliter liquid using graphene strip transistors built on a nanopipette

Graphene sheets made by chemical vapor deposition are transferred onto a glass nanopipette to form graphene strips. Two strips are connected at the nanopipette tip end to form a transistor channel. This graphene-based transistor can be operated in a liquid-gating condition, thereby allowing the electrical detection of the pH value of a droplet with submicroliter volume.     

Direct Growth of Perovskite Crystals on Metallic Electrodes for High‐Performance Electronic and Optoelectronic Devices

Metal halide perovskite has attracted enhanced interest for its diverse electronic and optoelectronic applications. However, the fabrication of micro‐ or nanoscale crystalline perovskite functional devices remains a great challenge due to the fragility, solvent, and heat sensitivity of perovskite crystals. Here, a strategy is proposed to fabricate electronic and optoelectronic devices by directly growing perovskite crystals on microscale metallic structures in liquid phase. The well‐contacted perovskite/metal interfaces ensure these heterostructures serve as high‐performance field effect transistors (FETs) and excellent photodetector devices. When serving as an FET, the on/off ratio is as large as 10⁶ and the mobility reaches up to ≈2.3 cm² V^?1 s^?1. A photodetector is displayed with high photoconductive switching ratio of ≈10⁶ and short response time of ≈4 ms. Furthermore, the photoconductive response is proved to be band‐bending‐assisted separation of photoexcited carriers at the Schottky barrier of the silver and p‐type perovskites.     

Solid‐State Electrolyte‐Gated Graphene in Optical Modulators

The gate‐tunable wide‐band absorption of graphene makes it suitable for light modulation from terahertz to visible light. The realization of graphene‐based modulators, however, faces challenges connected with graphene's low absorption and the high electric fields necessary to change graphene's optical conductivity. Here, a solid‐state supercapacitor effect with the high‐k dielectric hafnium oxide is demonstrated that allows modulation from the near‐infrared to shorter wavelengths close to the visible spectrum with remarkably low voltages (≈3 V). The electroabsorption modulators are based on a Fabry–Perot‐resonator geometry that allows modulation depths over 30% for free‐space beams.     

Label‐Free Attomolar Detection of Proteins Using Integrated Nanoelectronic and Electrokinetic Devices

High‐sensitivity screening of biomarkers is critical to areas ranging from early disease detection and diagnosis to bioterrorism surveillance. Here the development of integrated nanoelectronic and electrokinetic devices for label‐free attomolar detection of proteins is reported. Electrically addressable silicon nanowire field‐effect transistors and electrodes for electrokinetic transport are integrated onto a common sensor chip platform, and the nanowire devices are subsequently functionalized with receptors for selective biomarker detection. Nanowire devices modified with monoclonal antibody for prostate specific antigen exhibit close to a 10⁴ increase in sensitivity due to streaming dielectrophoresis and corresponding electrostatic contribution to the binding affinity after application of an AC electric field. The devices are also modified with receptors for cholera toxin subunit B and achieve a similar enhancement. These results show general applicability of this method, and could open up opportunities in early stage disease detection and the analysis of proteins from single cells.     

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large‐area electronics, particularly thin‐film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High‐permittivity (κ) oxide dielectrics are a key component for achieving low‐voltage and high‐performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO₂ with high‐κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low‐cost devices, tremendous efforts have been devoted to vacuum‐free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high‐κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high‐κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO₂ is outlined. Recent achievements of solution‐processed high‐κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water‐induced, self‐combustion reaction, and energy‐assisted post treatments, for the realization of flexible electronics and circuits are discussed.