High‐Performance,Room Temperature,Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2

Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high‐performance ultra‐broadband photodetector based on PdSe₂ with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid‐infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid‐infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W^?1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe₂, anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.     

Chemical Patterning of High‐Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Patterning of high‐mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next‐generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high‐mobility semiconducting Bi₂O₂Se crystals using dilute H₂O₂ and protonic mixture acid as efficient etchants. The 2D Bi₂O₂Se crystal after chemical etching maintains a high Hall mobility of over 200 cm² V^?1 s^?1 at room temperature. Centimeter‐scale well‐ordered arrays of 2D Bi₂O₂Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi₂O₂Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W^?1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.     

Biodegradable Bi2O2Se Quantum Dots for Photoacoustic Imaging‐Guided Cancer Photothermal Therapy

As new 2D layered nanomaterials, Bi₂O₂Se nanoplates have unique semiconducting properties that can benefit biomedical applications. Herein, a facile top‐down approach for the synthesis of Bi₂O₂Se quantum dots (QDs) in a solution is described. The Bi₂O₂Se QDs with a size of 3.8 nm and thickness of 1.9 nm exhibit a high photothermal conversion coefficient of 35.7% and good photothermal stability. In vitro and in vivo assessments demonstrate that the Bi₂O₂Se QDs possess excellent photoacoustic (PA) performance and photothermal therapy (PTT) efficiency. After systemic administration, the Bi₂O₂Se QDs accumulate passively in tumors enabling efficient PA imaging of the entire tumors to facilitate imaging‐guided PTT without obvious toxicity. Furthermore, the Bi₂O₂Se QDs which exhibit degradability in aqueous media not only have sufficient stability during in vivo circulation to perform the designed therapeutic functions, but also can be discharged harmlessly from the body afterward. The results reveal the great potential of Bi₂O₂Se QDs as a biodegradable multifunctional agent in medical applications.     

Flexible and High‐Performance All‐2D Photodetector for Wearable Devices

Emerging novel applications at the forefront of innovation horizon raise new requirements including good flexibility and unprecedented properties for the photoelectronic industry. On account of diversity in transport and photoelectric properties, 2D layered materials have proven as competent building blocks toward next‐generation photodetectors. Herein, an all‐2D Bi₂Te₃‐SnS‐Bi₂Te₃ photodetector is fabricated with pulsed‐laser deposition. It is sensitive to broadband wavelength from ultraviolet (370 nm) to near‐infrared (808 nm). In addition, it exhibits great durability to bend, with intact photoresponse after 100 bend cycles. Upon 370 nm illumination, it achieves a high responsivity of 115 A W^?1, a large external quantum efficiency of 3.9 × 10⁴%, and a superior detectivity of 4.1 × 10¹¹ Jones. They are among the best figures‐of‐merit of state‐of‐the‐art 2D photodetectors. The synergistic effect of SnS's strong light–matter interaction, efficient carrier separation of Bi₂Te₃–SnS interface, expedite carrier injection across Bi₂Te₃–SnS interface, and excellent carrier collection of Bi₂Te₃ topological insulator electrodes accounts for the superior photodetection properties. In summary, this work depicts a facile all‐in‐one fabrication strategy toward a Bi₂Te₃‐SnS‐Bi₂Te₃ photodetector. More importantly, it reveals a novel all‐2D concept for construction of flexible, broadband, and high‐performance photoelectronic devices by integrating 2D layered metallic electrodes and 2D layered semiconducting channels.     

Anomalous and Polarization‐Sensitive Photoresponse of Td‐WTe2 from Visible to Infrared Light

Recently, an emergent layered material T_d‐WTe₂ was explored for its novel electron–hole overlapping band structure and anisotropic inplane crystal structure. Here, the photoresponse of mechanically exfoliated WTe₂ flakes is investigated. A large anomalous current decrease for visible (514.5 nm), and mid‐ and far‐infrared (3.8 and 10.6 µm) laser irradiation is observed, which can be attributed to light‐induced surface bandgap opening from the first‐principles calculations. The photocurrent and responsivity can be as large as 40 µA and 250 A W^?1 for a 3.8 µm laser at 77 K. Furthermore, the WTe₂ anomalous photocurrent matches its in‐plane crystal structure and exhibits light polarization dependence, maximal for linear laser polarization along the W atom chain a direction and minimal for the perpendicular b direction, with the anisotropic ratio of 4.9. Consistently, first‐principles calculations confirm the angle‐dependent bandgap opening of WTe₂ under polarized light irradiation. The anomalous and polarization‐sensitive photoresponses suggest that linearly polarized light can significantly tune the WTe₂ surface electronic structure, providing a potential approach to detect polarized and broadband lights up to far infrared range.     

Epitaxial Growth of Ternary Topological Insulator Bi2Te2Se 2D Crystals on Mica

Nanostructures of ternary topological insulator (TI) Bi₂Te₂Se are, in principle, advantageous to the manifestation of topologically nontrivial surface states, due to significantly enhanced surface‐to‐volume ratio compared with its bulk crystals counterparts. Herein, the synthesis of 2D Bi₂Te₂Se crystals on mica via the van der Waals epitaxy method is explored and systematically the growth behaviors during the synthesis process are investigated. Accordingly, 2D Bi₂Te₂Se crystals with domain size up to 50 µm large and thickness down to 2 nm are obtained. A pronounced weak antilocalization effect is clearly observed in the 2D Bi₂Te₂Se crystals at 2 K. The method for epitaxial growth of 2D ternary Bi₂Te₂Se crystals may inspire materials engineering toward enhanced manifestation of the subtle surface states of TIs and thereby facilitate their potential applications in next‐generation spintronics.     

Cobalt Nanoparticles and Atomic Sites in Nitrogen‐Doped Carbon Frameworks for Highly Sensitive Sensing of Hydrogen Peroxide

In situ monitoring of hydrogen peroxide (H₂O₂) during its production process is needed. Here, an electrochemical H₂O₂ sensor with a wide linear current response range (concentration: 5 × 10^?8 to 5 × 10^?2 m ), a low detection limit (32.4 × 10^?9 m ), and a high sensitivity (568.47 µA mm ^?1 cm^?2) is developed. The electrocatalyst of the sensor consists of cobalt nanoparticles and atomic Co‐N_x moieties anchored on nitrogen doped carbon nanotube arrays (Co‐N/CNT), which is obtained through the pyrolysis of the sandwich‐like urea@ZIF‐67 complex. More cobalt nanoparticles and atomic Co‐N_x as active sites are exposed during pyrolysis, contributing to higher electrocatalytic activity. Moreover, a portable screen‐printed electrode sensor is constructed and demonstrated for rapidly detecting (cost ≈40 s) H₂O₂ produced in microbial fuel cells with only 50 µL solution. Both the synthesis strategy and sensor design can be applied to other energy and environmental fields.     

A Solution‐Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon‐Near‐Zero Medium

All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon‐near‐zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all‐optical control and device design. Here the authors demonstrate ultrafast all‐optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet‐chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub‐picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution‐processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices.     

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films

Atomically thin oxychalcogenides have been attracting intensive attention for their fascinating fundamental properties and application prospects. Bi₂O₂Se, a representative of layered oxychalcogenides, has emerged as an air‐stable high‐mobility 2D semiconductor that holds great promise for next‐generation electronics. The preparation and device fabrication of high‐quality Bi₂O₂Se crystals down to a few atomic layers remains a great challenge at present. Here, molecular beam epitaxy (MBE) of atomically thin Bi₂O₂Se films down to monolayer on SrTiO₃ (001) substrate is achieved by co‐evaporating Bi and Se precursors in oxygen atmosphere. The interfacial atomic arrangements of MBE‐grown Bi₂O₂Se/SrTiO₃ are unambiguously revealed, showing an atomically sharp interface and atom‐to‐atom alignment. Importantly, the electronic band structures of one‐unit‐cell (1‐UC) thick Bi₂O₂Se films are observed by angle‐resolved photoemission spectroscopy (ARPES), showing low effective mass of ≈0.15 m₀ and bandgap of ≈0.8 eV. These results may be constructive to the synthesis of other 2D oxychalcogenides and investigation of novel physical properties.     

Scalable Design of Two‐Dimensional Oxide Nanosheets for Construction of Ultrathin Multilayer Nanocapacitor

Large size of capacitors is the main hurdle in miniaturization of current electronic devices. Herein, a scalable solution‐based layer‐by‐layer engineering of metallic and high‐κ dielectric nanosheets into multilayer nanosheet capacitors (MNCs) with overall thickness of ≈20 nm is presented. The MNCs are built through neat tiling of 2D metallic Ru_0.95O₂^0.2? and high‐κ dielectric Ca₂NaNb₄O₁₃^? nanosheets via the Langmuir–Blodgett (LB) approach at room temperature which is verified by cross‐sectional high‐resolution transmission electron microscopy (HRTEM). The resultant MNCs demonstrate a high capacitance of 40–52 µF cm^?2 and low leakage currents down to 10^?5–10^?6 A cm^?2. Such MNCs also possess complimentary in situ robust dielectric properties under high‐temperature measurements up to 250 °C. Based on capacitance normalized by the thickness, the developed MNC outperforms state‐of‐the‐art multilayer ceramic capacitors (MLCC, ≈22 µF cm^?2/5 × 10⁴ nm) present in the market. The strategy is effective due to the advantages of facile, economical, and ambient temperature solution assembly.     

Developing a “Water‐Defendable” and “Dendrite‐Free” Lithium‐Metal Anode Using a Simple and Promising GeCl4 Pretreatment Method

Lithium metal is an ultimate anode in “next‐generation” rechargeable batteries, such as Li–sulfur batteries and Li–air (Li–O₂) batteries. However, uncontrollable dendritic Li growth and water attack have prevented its practical applications, especially for open‐system Li–O₂ batteries. Here, it is reported that the issues can be addressed via the facile process of immersing the Li metal in organic GeCl₄–THF steam for several minutes before battery assembly. This creates a 1.5 µm thick protection layer composed of Ge, GeO_x, Li₂CO₃, LiOH, LiCl, and Li₂O on Li surface that allows stable cycling of Li electrodes both in Li‐symmetrical cells and Li–O₂ cells, especially in “moist” electrolytes (with 1000–10 000 ppm H₂O) and humid O₂ atmosphere (relative humidity (RH) of 45%). This work illustrates a simple and effective way for the unfettered development of Li‐metal‐based batteries.     

MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Mercury telluride (HgTe) colloidal quantum dots (CQDs) have been developed as promising materials for the short and mid‐wave infrared photodetection applications because of their low cost, solution processing, and size tunable absorption in the short wave and mid‐infrared spectrum. However, the low mobility and poor photogain have limited the responsivity of HgTe CQD‐based photodetectors to only tens of mA W^?1. Here, HgTe CQDs are integrated on a TiO₂ encapsulated MoS₂ transistor channel to form hybrid phototransistors with high responsivity of ≈10⁶ A W^?1, the highest reported to date for HgTe QDs. By operating the phototransistor in the depletion regime enabled by the gate modulated current of MoS₂, the noise current is significantly suppressed, leading to an experimentally measured specific detectivity D* of ≈10¹² Jones at a wavelength of 2 µm. This work demonstrates for the first time the potential of the hybrid 2D/QD detector technology in reaching out to wavelengths beyond 2 µm with compelling sensitivity.     

Ultrasensitive 2D Bi2O2Se Phototransistors on Silicon Substrates

2D materials are considered as intriguing building blocks for next‐generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)‐grown 2D Bi₂O₂Se transferred onto silicon substrates with a noncorrosive transfer method. The as‐transferred Bi₂O₂Se preserves high quality in contrast to the serious quality degradation in hydrofluoric‐acid‐assisted transfer. The phototransistors show a responsivity of 3.5 × 10⁴ A W^?1, a photoconductive gain of more than 10⁴, and a time response in the order of sub‐millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 10¹³ Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD‐grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D‐material‐based optoelectronic applications as well as integrating with state‐of‐the‐art silicon photonic and electronic technologies.     

Effects of sodium oleate on synthesis and photocatalytic activity of Bi<Subscript>2</Subscript>WO<Subscript>6</Subscript>/Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>@RGO

In this study, the effects of sodium oleate on synthesis of Bi₂WO₆/Bi₂O₃ loaded reduced graphene oxide photocatalyst was studied. The as-prepared composites were characterized by X-ray diffraction, Fourier transform infrared, X-ray photoelectron spectroscopy, UV–visible diffuse reflectance and photoluminescence spectroscopy. The results suggested that addition of sodium oleate not only promoted synthesis of Bi₂O₃, but also enhanced the reduction of GO to graphene. When the amount of sodium oleate was 4 mol (Bi:SO?=?1:1), Bi₂WO₆/Bi₂O₃@RGO to the best visible-light photocatalytic activity can be synthesized by a facile one-step solvothermal process without further reduction reaction. Hence, it indicated that sodium oleate could affect the synthesis of the as-prepared composites and the photocatalytic activity for degradation of RhB. This study did provide not only a facile method to synthesize Bi₂WO₆/Bi₂O₃@RGO, but also a method to reduce graphene oxide to graphene.     

In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High‐Speed Visible–Near‐Infrared Photodetectors

c2D transition metal dichalcogenides (TMDCs)‐based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n‐MoS₂/n‐silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS₂ grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible–near‐infrared light with responsivity up to 11.9 A W^–1. Notably, the photodetector shows high‐speed response time of ≈30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS₂, as well as in situ device fabrication process. These findings suggest that the multilayered MoS₂/Si homotype heterojunction have great potential application in the field of visible–near‐infrared detection and might be used as elements for construction of high‐speed integrated optoelectronic sensor circuitry.     

Bolometric Effect in Bi2O2Se Photodetectors

Bi₂O₂Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi₂O₂Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi₂O₂Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real‐time temperature tracking of Bi₂O₂Se photodetectors under time evolution after light excitation. Moreover, the Bi₂O₂Se bolometer shows a high temperature coefficient of resistance (?1.6% K^?1), high bolometric coefficient (?31 nA K^?1), and high bolometric responsivity (>320 A W^?1). These findings offer a new approach to develop bolometric photodetectors based on Bi₂O₂Se layered materials.     

High Rate,Long Lifespan LiV3O8 Nanorods as a Cathode Material for Lithium‐Ion Batteries

LiV₃O₈ nanorods with controlled size are successfully synthesized using a nonionic triblock surfactant Pluronic‐F127 as the structure directing agent. X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy techniques are used to characterize the samples. It is observed that the nanorods with a length of 4–8 µm and diameter of 0.5–1.0 µm distribute uniformly. The resultant LiV₃O₈ nanorods show much better performance as cathode materials in lithium‐ion batteries than normal LiV₃O₈ nanoparticles, which is associated with the their unique micro–nano‐like structure that can not only facilitate fast lithium ion transport, but also withstand erosion from electrolytes. The high discharge capacity (292.0 mAh g^?1 at 100 mA g^?1), high rate capability (138.4 mAh g^?1 at 6.4 A g^?1), and long lifespan (capacity retention of 80.5% after 500 cycles) suggest the potential use of LiV₃O₈ nanorods as alternative cathode materials for high‐power and long‐life lithium ion batteries. In particular, the synthetic strategy may open new routes toward the facile fabrication of nanostructured vanadium‐based compounds for energy storage applications.     

Surface‐Halogenation‐Induced Atomic‐Site Activation and Local Charge Separation for Superb CO2 Photoreduction

Solar‐energy‐driven CO₂ conversion into value‐added chemical fuels holds great potential in renewable energy generation. However, the rapid recombination of charge carriers and deficient reactive sites, as two major obstacles, severely hampers the photocatalytic CO₂ reduction activity. Herein, a desirable surface halogenation strategy to address the aforementioned concerns over a Sillén‐related layer‐structured photocatalyst Bi₂O₂(OH)(NO₃) (BON) is demonstrated. The surface halogen ions that are anchored on the Bi atoms by replacing surface hydroxyls on the one hand facilitate the local charge separation, and, on the other hand, activate the hydroxyls that profoundly boost the adsorption of CO₂ molecules and protons and facilitate the CO₂ conversion process, as evidenced by experimental and theoretical results collectively. Among the three series of BON‐X (X = Cl, Br, and I) catalysts, BON‐Br shows the most substantially enhanced CO production rate (8.12 µmol g^?1 h^?1) without any sacrificial agents or cocatalysts, ≈73 times higher than that of pristine Bi₂O₂(OH)(NO₃), also exceeding that of the state‐of‐the‐art photocatalysts reported to date. This work presents a surface polarization protocol for engineering charge behavior and reactive sites to promote photocatalysis, which shows great promise to the future design of high‐performance materials for clean energy production.     

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2D planar structures of nonlayered wide‐bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self‐confined chemical vapor deposition method is described. The enhanced spin‐triplet exciton (Z_f, 2.98 eV) luminescence and polarization‐enhanced second‐harmonic generation based on the 2D CuBr flakes demonstrate the potential of short‐wavelength luminescent applications. Solar‐blind and self‐driven ultraviolet (UV) photodetectors based on the as‐synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W^?1, an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 10¹¹ Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short‐wavelength light‐emitting devices, nonlinear optical devices, and UV photodetectors.     

Additive‐Assisted Novel Dual‐Salt Electrolyte Addresses Wide Temperature Operation of Lithium–Metal Batteries

In this study, self‐synthesized lithium trifluoro(perfluoro‐tert‐butyloxyl)borate (LiTFPFB) is combined with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) to formulate a novel 1 m dual‐salt electrolyte, which contains lithium difluorophosphate (LiPO₂F₂) additive and dominant carbonate solvents with low melting point and high boiling point. The addition of LiPO₂F₂ into this novel dual‐salt electrolyte dramatically improves cycleability and rate capability of a LiNi_0.5Mn_0.3Co_0.2O₂/Li (NMC/Li) battery, ranging from ?40 to 90 °C. The NMC/Li batteries adopt a Li–metal anode with low thickness of 100 µm (even 50 µm) and a moderately high cathode mass loading level of 10 mg cm^?2. For the first time, this paper provides valuable perspectives for developing practical lithium–metal batteries over a wide temperature range.