Multifunctional SrTiO3/NiZn ferrite/POE composites with eletromagnetic and flexible properties for RF applications

Multifunctional dielectric composites with electromagnetic and flexible properties for RF applications were investigated. A kind of low loss flexible dielectric and magnetic composite with SrTiO₃ (STO) ultrafine particles and NiZn ferrite (NZO) ultrafine particles embedded in a Thermoplastic Polyolefin Elastomer (POE) matrix was fabricated using the extrusion technology. The dielectric and magnetic properties of the as-prepared composites with different volume fraction of ceramic fillers were studied. The results indicate that when the volume of the ceramic fillers is fixed, the permittivity of the composites increase while the dielectric loss, permeability and magnetic loss decrease with the increasing of the ratio of STO to NZO. The cut-off frequencies of the composites are all above 1 GHz. The good frequency stability of the electromagnetic properties within a wide frequency range was observed. All the composites show very good flexibilities. With the increasing of the volume fraction of ceramic fillers, the tensile strength and elongation decrease. The obtained multifunctional flexible magnetic-dielectric composites are good candidates for the applications of the capacitor-inductor integrating devices in RF communications such as electromagnetic interference filters and antennas.     

Analysis and design of rectangular microstrip antenna on two-layer substrate materials at terahertz frequency

In this paper, an effective permittivity of the two-layer dielectric substrate material has been analyzed to enhance the electrical performance of the rectangular microstrip patch antenna at terahertz frequency. The frequency dependent effective dielectric permittivity of the substrate materials has been evaluated and result has been compared with finite integral technique based CST Microwave Studio a commercially available simulator. The input impedance characteristic with electrical performance of the rectangular microstrip patch antenna on two-layer substrate materials has also been analyzed at 600 GHz. Manipulation in the input impedance characteristic of the antenna has led to a slow wave structure. This slow wave structure has been examined at 542 GHz, and improvement in the performance has been observed without increasing the overall dimension of the proposed antenna.     

Dielectric Characteristics of In-Plane Polarized Lead Zirconate Titanate Thin Films on Oxide Layers

Sol-gel derived lead zirconate titanate (PZT) films have been prepared on STO-passivated silicon substrates. The STO buffer layer of thickness about 55 nm is prepared by rf-magnetron sputtering. XRD results reveal that the PZT film has well-crystallized perovskite phase, indicating that the thin STO layer can effectively prevent reaction and inter-diffusion between the PZT film and silicon substrate. Interdigitated electrodes (IDEs) have then been deposited on the PZT film by magnetron sputtering and patterned using the standard photolithography. With the IDEs, the dielectric and ferroelectric properties of the PZT film under transverse or in-plane electric fields have been investigated. By assuming a uniform distribution of electric field (in-plane electric field model), the estimated relative permittivity of the PZT film is about 2100, while the dielectric loss is less than 1%. Good in-plane polarization hysteresis loop is observed, showing an observed remanent polarization value of 21 μC/cm², which is comparable to that of a PZT film with both top and bottom electrodes. The in-plane polarized PZT/STO/SiO₂/Si film can be used to fabricate d₃₃-mode unimorph bending transducers, which will have much better performance than the conventional bending transducers driven electromechanically through the piezoelectric d₃₁ mode.     

Pyroelectric and dielectric properties of lead lanthanum zirconate titanate (Pb0.92La0.08)(Zr0.65Ti0.35)O3-P(VDF/TFE)(0.98/0.02) nanocomposites

PLZT-P(VDF/TFE) 0–3 composites with nanosized lead lanthanum zirconate titanate (Pb_0.92La_0.08)(Zr_0.65Ti_0.35)O₃ (PLZT 8/65/35) ceramic powders of volume fraction Φ up to 0.2 were fabricated using PLZT powders imbedded in a copolymer P(VDF/TFE)(0.98/0.02) matrix. The PLZT nanopowders were prepared by the sol-gel technique. The PLZT-P(VDF/TFE) composite samples were prepared from ceramic and polymer powders by the hot-pressing method. Dielectric response was studied in the frequency range from 100 Hz to 1 MHz and at temperatures from 100 to 450 K. The pyroelectric properties were studied by dynamic method with modulation frequency from 1 to 100 Hz. The dielectric response of the ceramics-polymer composite was found to be a combination of the responses of the pure polymer and the ceramics: (1) the addition of the PLZT ceramics increases the value of the dielectric permittivity ɛ′, (2) the composite shows the maximum of the permittivity coming from the PLZT ceramics, (3) the temperature dependences of the dielectric loss tgδ are characterized by the maximum attributed to the α-relaxation (glass transition) in the pure polymer. The pyroelectric coefficient of the composite increases from ∼20 μC/m²K in pure P(VDF/TFE) to ∼140 μC/m²K in the composites of Φ = 0.15.     

Effect of SiO<Subscript>2</Subscript> Addition to BaO-ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript> Glass on Dielectric and Thermal Properties for Application to Barrier Ribs of Plasma Display Panels

The effect of SiO₂ addition to barium zinc borate (BaO-ZnO-B₂O₃, BZB) glass on dielectric and thermal expansion properties was investigated. When SiO₂ was added to the glass batch to form a SiO₂-BaO-ZnO-B₂O₃ (SBZB) glass, the dielectric constant decreased significantly from 15.5 to 9.9. When SiO₂ (quartz) was further added to the SBZB in the form of filler particles to yield ceramic filler-reinforced SBZB microcomposites, the dielectric constant was further decreased. The coefficient of thermal expansion (CTE) of SBZB was slightly lower than the allowable range, while the filler addition to SBZB correspondingly increased CTE to the allowable range. Thus, the addition of SiO₂ to BZB glass to form SBZB glass and further addition to SBZB in the form of ceramic filler were shown to be amenable ways to tailor the dielectric constant as well as CTE of the barrier rib glass for the PDP application.     

Effects of Processing Conditions on the Dielectric Properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

There have been a number of recent reports of anomalously large permittivities (ε _r ≈ 10⁴) in the material CaCu₃Ti₄O₁₂. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu₃Ti₄O₁₂ can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 Å. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (ε _r ～ 8,000) dielectric with relatively low loss (tan δ < 0.05 at 1 kHz).     

Frequency-temperature compensation mechanism for bismuth based dielectric/PTFE microwave composites

The dielectric property and thermal expansion property of Bi₂O₃-ZnO-Nb₂O₃-based (BZN) ceramics filler reinforced composites have been investigated as a function of temperature range from ?50 to 175 °C. The composites with adjustable temperature coefficient of frequency (τ _f ) and dielectric temperature coefficient ( $ \alpha _{\varepsilon } $ ) are achieved by filling the ceramic filler with different $ \alpha _{\varepsilon } $ into polymer matrix. A series of polytetrafluoroethylene (PTFE) based composites blended with different amount of ceramic filler with different $ \alpha _{\varepsilon } $ have been studied in this paper. The results indicated that with the amount of ceramic filler increasing, both of the relative permittivity and dissipation factor of composites increased. Composite filled with positive $ \alpha _{\varepsilon } $ (245 ppm/°C) BZN ceramic filler (40 vol.%) has low $ \alpha _{\varepsilon } $ (22 ppm/°C), while filled with near-zero $ \alpha _{\varepsilon } $ (10 ppm/°C) BZN ceramic filler (40 vol.%) have low τ _f (?5 ppm/°C).     

Mode‐matching analysis of a spit‐circular cavity resonator for measurement of the dielectric constant for film on a substrate

In this paper, we apply the mode‐matching technique (eigenmode expansion) to formulate an analytical model for a split cylindrical cavity resonator with a thick ceramic film layer sandwiched between two‐layer alumina substrates. We then compute the resonant frequencies with the TE₀₁₁ mode with an eigenvalue problem approach using the model formula. The quality factor (Q ‐factor) of the resonator is also calculated by applying the perturbation method to the analytical model. The validity of the proposed analytical technique is confirmed by applying this method to the estimation of permittivity of thick films as an inverse problem. Ceramic films (2 µm thickness) were synthesized using a chemical solution method onto 200‐µm‐thick, 50‐mm‐diameter alumina substrates. The complex permittivity of the films was then determined using the TE₀₁₁ mode split cylindrical cavity resonator in the 10‐GHz band. The extent of the edge effect at a sample insertion space was evaluated by comparing the estimated results through TE wave analysis using the mode‐matching method when the transverse resonance technique and the perturbation method were applied to calculate the resonant frequency and the dielectric Q ‐factor. The results obtained indicate that a difference of 0.153% in the permittivity of the alumina substrate causes differences of 6.10 and 3.75% in the measured permittivity and loss tangent, respectively, of 2‐µm‐thick ceramic film with a permittivity of ∼50. Differences in permittivity and loss tangent were more pronounced with thinner films. It was also confirmed that the estimated results for permittivity and the loss tangent values of these ceramic films were affected by the estimated permittivity value of the alumina substrate. © 2017 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Effect of dc biasing on YBCO/STO/LAO tunable microstrip filters

Abstract

One of the critical design aspects in ferroelectric tunable microstrip filters is choosing the right bias configuration, for large tunability as well as to maintain the filter's passband characteristics. This work is based on strontium titanate (STO) ferroelectric thin-film based tunable microstrip filters for cryogenic temperature applications. Large tunability factors have been demonstrated in YBCO/STO/LAO two-layered microstrip filters when operated at or below 77 K. The effect of the dc electric field (primarily responsible for tuning) and critical design parameters such as the insertion loss, frequency tunability, return loss, and bandwidth of superconductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work.     

The effect of dielectric overlay on microstrip antenna embedded in composite laminated substrates

Composite structures with desire mechanical properties can be tailored to embed microstrip antenna for reducing aerodynamic disturbance in aerospace systems. This work aims at developing a spectral domain model to analyze the effect of dielectric overlay on the performance of microstrip antenna embedded in composite laminated substrates. Analysis shows that antenna performance depends not only on the dielectric overlay but also on the laminate layer's electromagnetic property, fiber direction, and stacking sequence. The common belief that the antenna size will be reduced because of the increase of equivalent permittivity by the dielectric overlay is no longer valid in composite laminated substrates. Of the eight substrates studied, overlay can, in general, reduce antenna radiation efficiency; however, it is found to have favorable effect in substrates with some selected electromagnetic properties and stacking sequence. For example, removing the antenna overlay in [45/−45/−45/45/45/−45] substrate can be counterproductive. Copyright © 2014 John Wiley & Sons, Ltd.     

Dielectric Properties of Yttrium Vanadate Crystals from 15 K to 295 K

Yttrium Vanadate (YVO₄) is a birefringent crystal, which has similar dielectric constant as that of Sapphire. In this paper we have reported the measurement of the real part of permittivity and loss tangent of YVO₄ crystal in the temperature range 15–295 K at a frequency of 16.3 GHz. We have used the dielectric post resonator technique for the microwave characterisation of the YVO₄ dielectric rod. The multifrequency Transmission Mode Q-Factor (TMQF) technique has been used for data processing and hence precise values of permittivity and loss tangent are achieved. Easily machineable YVO₄ is characterized by low losses at microwave frequencies. At temperature of 15 K and frequency of 16.3 GHz the permittivity was 9.23 and loss tangent was 2 × 10^{− 5}. YVO₄ is identified as a potential candidate to replace expensive Sapphire in many microwave applications.     

Improved energy density and dielectric properties of P(VDF-HFP) composites with TiO<Subscript>2</Subscript> nanowire clusters

Dielectric composites are of great demand in the micro-electronics industry. To enhance the energy storage density of the composites, TiO₂ nanowire clusters was synthesized by a hydrothermal method and incorporated into the P(VDF-HFP) polymer matrix in this work. The microstructure, dielectric properties of the prepared film were discussed and the effects of TiO₂ loading on the energy density were investigated. The results shows that the TiO₂ clusters were tightly blended to the P(VDF-HFP) matrix owing to the dopamine-modified interface. The dielectric constant increased with the loading of TiO₂, the maximum dielectric constant reached 12.04 with 7.5 vol% TiO₂ loading at 1 kHz, as compared to 5.01 for the neat P(VDF-HFP). The enhanced dielectric constant was attributed to the interface polarization originated from the large interface area between the TiO₂ nanowire and polymer matrix. The discharged energy density of the composite significantly increased to 1.35 J/cm³ with 7.5 vol% TiO₂ nanowire clusters, which was two times higher than that of the neat P(VDF-HFP) at the same condition. The findings of this work can shed a light on improving the energy density of energy storage device via morphology modification.     

Influence of substitution on dielectric diffuseness in Ba<Subscript>(1-x)</Subscript>Bi<Subscript>(2+2x/3)</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics prepared by chemical precursor decomposition method

Barium bismuth niobate, Ba_(1-x)Bi_(2+2x/3)Nb₂O₉ (BBN with x = 0.0, 0.1, 0.2, 0.3, 0.4) ceramic powders in the nanometer range were prepared by chemical precursor decomposition method (CPD). The single phase layered perovskite was prepared throughout the composition range studied. No intermediate phase was found during heat treatment at and above 600°C. The crystallite size and the particle size, obtained from XRD and TEM respectively, were in the range of 15–30 nm. The addition of Bi₂O₃ substantially improved the sinterability associated with high density (96%) which was otherwise difficult in the case of pure BaBi₂Nb₂O₉ (BBN x = 0.0). The sintering was done at 900°C for 4 h. The relative permittivity of BBN ceramics at both room temperature and in the vicinity of the temperature of maximum permittivity (T_m) has increased significantly with increase in bismuth content and loss is also decreased to a certain level of bismuth doping. T_m increased with increase in Bi₂O₃. The diffuseness (γ) in the phase transition was found to increase from 1.54 to 1.98 with the increase in Ba²⁺ substitution level from x = 0.0 to x = 0.3.     

Preparation and modification of high Curie point BaTiO<Subscript>3</Subscript>-based X9R ceramics

BaTiO₃ (BT) based X9R ceramics with high permittivity about 1700 were prepared by doping and pre-sintering technique. Pure Bi_0.5Na_0.5TiO₃ (BNT) dopant was synthesized by the conventional solid state reaction first. Using this new approach, high performance BTBNT (BT doped with BNT) materials, owning high Curie temperature (139 °C), flat ferroelectric transition region and large permittivity at room temperature, were obtained. The effects of several dopants on dielectric properties of BTBNT ceramics were measured by the LCR meter. The suppression effect for the peaks in the dielectric constant at Curie temperature of these dopants have been ranked as follows: BiNbO₄ > CaZrO₃ > Nb₂O₅ > BNT.     

Silicon nanorods‐based all‐dielectric waveguides with long decay‐length at the telecommunication band

We investigate subwavelength waveguides composed of silicon nanorods array in straight and nonstraight regimes deposited on a silica (SiO₂) substrate. It is shown that using all‐dielectric nanorods with high permittivity to design an all‐dielectric optical waveguide provides several advantages such as low‐dissipation coefficient and long decay length for the distributed fields. Exploiting silicon arrays in touching and nontouching arrangements, we examined the optical response of the structure to the guiding of magnetic and electric fields with transverse and longitudinal polarization modes. We studied the decay length for all propagated modes in both nanochain orientations numerically. Simulation results for straight arrays showed that the averaged decay length for the structure with dielectric particles in touching regime is 1.6 µm (for the waveguide with the length of 2.2 µm), and for the nontouching array is 2.2 µm (for the array with the length of 3.1 µm). Calculating transmission loss factors and considering decay length of the proposed waveguide, we verified the strong potential of the proposed structure to design all‐dielectric photonic devices to operate at telecommunication spectra (λ~1310 nm and 1550 nm). Also, we computed bending losses [dB] for the examined structures based on the bends degree. Copyright © 2015 John Wiley & Sons, Ltd.     

Effect of BaTiO3 size on dielectric property of BaTiO3/PVDF composites

The BaTiO₃/polyvinylidene fluoride (BaTiO₃/PVDF) polymer-based composites with different size and concentration of BaTiO₃ particles were fabricated via a simple physical mixing and subsequently hot-press processing. Effect of the filler size and frequency on the dielectric properties of the BaTiO₃/PVDF binary composites was discussed. The result shows that the BaTiO₃ size has an effect on the morphology of the BaTiO₃/PVDF composites. The composites with 0.2 and 0.3 μm BaTiO₃ exhibit high dielectric permittivity than those with 0.4 and 0.5 μm BaTiO₃. The composite with 0.4 μm BaTiO₃ has a minimum dielectric permittivity except one with 0.1 μm BaTiO₃. Dielectric loss of the BaTiO₃/PVDF binary composites changes slightly with the BaTiO₃ sizes. The ternary BaTiO₃/PVDF composites with 0.1 and 0.7 μm BaTiO₃ in coexistence exhibit good dielectric properties. As a result, the BaTiO₃/PVDF ternary composites in this study may have a promising application as dielectric material in embedded capacitor.     

在相同相对介电常数情况下不同厚度的微带贴片天线设计与仿真验证

微带贴片天线的基板材料的相对介电常数和介质板厚度是影响天线性能的重要因素.为了验证在相同相对介电常数的情况下,改变介质基板的不同的厚度时微带矩形贴片天线的阻抗带宽的变化,通过HFSS软件设计和仿真了工作频率为1.95 GHz的4个矩形微带贴片天线,相对介电常数均为2.2,介质基板厚度分别设计为0.8、1.6、2.4、3.2 mm,比较其各自的S参数、方向图,通过仿真结果验证了相关文献所述的对于在给定的频率下,选用相同的基板材料时,厚度增大时阻抗带宽会变大的说法.     

Dielectric properties of ZnNb2O6/epoxy composites

The dielectric properties of epoxy composites with various contents of ZnNb₂O₆ filler were investigated at microwave frequencies. Increasing frequency from 1 GHz to 9 GHz did not affect the composites’ dielectric constants but increased their dielectric losses; both of which depended on ZnNb₂O₆ content and showed typical values of 9.63 and 0.019, respectively, at 9 GHz in the composite with 0.6 volume fraction ZnNb₂O₆. The results were compared with theoretical models and shown to be well described by the EMT model.     

Low Temperature Sintering of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-Based Middle-<Emphasis Type="Italic">k</Emphasis> Dielectric Composition for LTCC Applications

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi₄O₉-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t_cf = 10 ppm/C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi₄O₉ to BaTi₅O₁₁ and Ba₄Ti₁₃O₃₀ was observed, which result in the modification of microwave dielectric properties.     

Dielectric properties of epoxy nanocomposites

The dielectric properties of epoxy nanocomposites with insulating nano-fillers, viz., TiO₂, ZnO and AI₂O₃ were investigated at low filler concentrations by weight. Epoxy nanocomposite samples with a good dispersion of nanoparticles in the epoxy matrix were prepared and experiments were performed to measure the dielectric permittivity and tan delta (400 Hz-1 MHz), dc volume resistivity and ac dielectric strength. At very low nanoparticle loadings, results demonstrate some interesting dielectric behaviors for nanocomposites and some of the electrical properties are found to be unique and advantageous for use in several existing and potential electrical systems. The nanocomposite dielectric properties are analyzed in detail with respect to different experimental parameters like frequency (for permittivity/tan delta), filler size, filler concentration and filler permittivity. In addition, epoxy microcomposites for the same systems were synthesized and their dielectric properties were compared to the results already obtained for nanocomposites. The interesting dielectric characteristics for epoxy based nanodielectric systems are attributed to the large volume fraction of interfaces in the bulk of the material and the ensuing interactions between the charged nanoparticle surface and the epoxy chains.