Highly conducting and transparent antimony doped tin oxide thin films: the role of sputtering power density

Sb doped SnO₂ thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO₂ lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO₂ thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10⁻⁴ Ω cm at 7.65/cm² and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed.     

Nonlinear growth of zinc tin oxide thin films prepared by atomic layer deposition

Zinc tin oxide (ZTO) thin films can be deposited by atomic layer deposition (ALD) with adjustable electrical, optical and structural properties. However, the ternary ALD processes usually suffer from low growth rate and difficulty in controlling film thickness and elemental composition, due to the interaction of ZnO and SnO₂ processes. In this work, ZTO thin films with different Sn levels are prepared by ALD super cycles using diethylzinc, tetrakis(dimethylamido)tin, and water. It is observed that both the film growth rate and atom composition show nonlinear variation versus [Sn]/([Sn]+[Zn]) cycle ratio. The experimental thickness measured by spectroscopic ellipsometry and X-ray reflectivity are much lower than the expected thickness linearly interpolated from pure ZnO and SnO_x films. The [Sn]/([Sn]+[Zn]) atom ratios estimated by X-ray photoelectron spectroscopy have higher values than that expected from the cycle ratios. Hence, to characterize the film growth behavior versus cycle ratio, a numerical method is proposed by simulating the effect of reduced density and reactivity of surface hydroxyls and surface etching reactions. The structure, electrical and optical properties of ZTO with different Sn levels are also examined by X-ray diffraction, atomic force microscope, Hall measurements and ultraviolet–visible–infrared transmittance spectroscopy. The ZTO turns out to be transparent nanocrystalline or amorphous films with smooth surface. With more Sn contents, the film resistivity gets higher (>1 Ω cm) and the optical bandgap rises from 3.47 to 3.83 eV.     

Essential Macleod Program (EMP) simulated fabrication of high quality Zn:SnO2/Ag/Zn:SnO2 multilayer transparent conducting electrode on flexible substrates

In the quest of promising Indium free amorphous transparent conducting oxide (TCO), Zn-doped SnO₂/Ag/Zn-doped SnO₂ (OMO) multilayer films were prepared on flexible polyethylene terephthalate (PET) substrates by RF sputtering at room temperature (RT). Growth parameters were optimized by varying sputtering power and working pressure, to have high electrical conductivity and optical transmittance. Optimization of the thickness of each layer was done by Essential Macleod Program (EMP) simulation to get the higher transmission through OMO multilayer. The sheet resistance and transmittance of 3 at% Zn-doped SnO₂ thin film (30 nm) were 2.23 kΩ/□, (ρ ~ 8.92×10⁻³ Ω∙cm) and 81.3% (at λ ~ 550 nm), respectively. By using optimized thicknesses of Zn-doped SnO₂ (30 nm) and Ag (12 nm) and optimized growth condition Zn-doped SnO₂/Ag/Zn-doped SnO₂ multilayer thin films were deposited. The low sheet resistance of 7.2 Ω/□ and high optical transmittance of 85.1% in the 550 nm wavelength region was achieved with 72 nm multilayer film.     

Realization of high transparent conductive vanadium-doped zinc oxide thin films onto flexible PEN substrates by RF-magnetron sputtering using nanopowders targets

RF-magnetron sputtering has been carried out at room temperature to deposit vanadium-doped zinc oxide (VZO) nanostructured thin films onto flexible PEN substrates. The sputtering targets of compacted VZO nanopowder have been prepared using a rapid and inexpensive Sol-Gel synthesis followed by a supercritical drying process. Structural and morphological study of VZO particles in the targets has been carried out via X-ray diffraction and Transmission Electron Microscopy (TEM). The nanostructured thin films have been characterized to analyze the structural, morphological, electrical and optical properties as a function of vanadium content from 0 to 4 at.%. Structural characterization of VZO thin films revealed that the deposited thin films have been grown preferentially along (002) and exhibit the hexagonal wurtzite structure. The cross-sectional and microstructural analysis performed by Scanning Electron Microscopy (SEM) confirms the columnar growth of nanostructures. The deposited thin films exhibit transparent behavior with transmission >70% in the visible region. It has been observed that nanostructured thin films with vanadium content of 2% have demonstrated the lowest resistivity (6.71 × 10^?4 Ω cm) with Hall mobility of 10.62 cm² V^?1 s^?1. The deposited vanadium doped nanostructured thin films would have potential applications in electronic and optoelectronic devices.     

Indium-free large area Nb-doped SnO2 thin film as an alternative transparent conducting electrode

Niobium doped tin oxide (NTO) thin film deposited via facile chemical spray pyrolysis technique on to a large area (10 × 10 cm²) glass substrate exhibits better optical and electrical properties. The structural, surface, optical and electrical properties were analyzed by means of XRD, XPS, AFM, SEM-EDS, Hall Effect, and four-point probe techniques. The deposited NTO thin film was found to possess a maximum average transmittance value around 75% due to enhanced optical bandgap (3.77 eV) by Nb-dopant effect. The variation of sheet resistance of the large area (10 × 10 cm²) coated thin film over the entire region was studied at every 1 × 1 cm² area. The film doped with 1.5 wt% of Nb content showed improved carrier concentration (9.33 × 10¹⁹ cm^-3), higher free carrier mobility (39.4 cm²/V·s), improved electrical resistivity (1.69 × 10^-3 Ω cm) and low sheet resistance (26.5 Ω/□). The temperature dependent electrical measurement was carried out from 200 to 450 °C in steps of 50 °C to understand the resistance stability of the film. In addition to these studies, we report the surface work function of NTO thin film to identify its suitability in optoelectronic devices. The estimated electrical properties confirm the substitution of Nb⁵⁺ in Sn site of SnO₂ lattice. Our results indicate the optimized NTO thin film to possess promising optical and electrical transport properties to serve as a better indium-free alternate transparent conducting electrode in various optoelectronic devices.     

Characteristics of Transparent Conducting W‐Doped SnO2 Thin Films Prepared by Using the Magnetron Sputtering Method

Tungsten‐doped SnO₂ (WTO) thin films with a given thickness of about 300 nm have been prepared by magnetron sputtering with a substrate temperature in the range 400°C–700°C. The effects of substrate temperature on the structural, optical, and electrical properties and of WTO thin films have been investigated. A texture transition from (1 1 0) to (2 1 1) crystallographic orientations has experimentally been found by X‐ray diffraction measurements as substrate temperature is raised. It was found that all thin films showed smooth surface with no cracks and high transparency (>85%) with the optical band gap ranging from 4.22 to 4.32 eV. The mobility varied from 12.89 to 22.48 cm²·(V·s)^?1 without reducing the achieved high carrier concentration of about 1.6 × 10²⁰ cm^?3. Such an increase in mobility is shown to be clearly associated with the development of (2 0 0) but concurrent degradation of (1 1 0) in WTO thin films.     

Structural, Electrical and Optical Properties of p-Type Transparent Conducting SnO2:Zn Film

Highly transparent, p-type conducting SnO₂:Zn films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO₂ ceramic target followed by annealing at various temperatures. The effect of annealing temperature on the structural, electrical and optical performances of SnO₂:Zn films has been studied. XRD results show that all the SnO₂:Zn films possess tetragonal rutile structure with the preferred orientation of (101). Hall effect results indicate that at 873 K for 3 h was the optimum annealing parameters for p-type SnO₂:Zn films with relatively high hole concentration and low resistivity of 3.334 × 10¹⁹ cm⁻³ and 3.588 Ω cm, respectively. The average transmission of the p-type SnO₂:Zn films were above 80% in the visible light range. In addition, p-type conductivity was also confirmed by the non-linear characteristics of a p-type SnO₂:Zn/n-type SnO₂:Sb structure.     

Structural,photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates

Epitaxial Ta-doped SnO₂ films with Ta concentrations from 0 to 8?at.% have been deposited on MgF₂ (110) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The effects of Ta doping on the structural, photoelectrical and photoluminescence (PL) properties of the obtained films were studied in detail. The results showed that the single crystal rutile SnO₂ films were obtained and the heteroepitaxial relationship was SnO₂ (110) || MgF₂ (110) with SnO₂ [001] || MgF₂ [001]. The highest Hall mobility of 74.2?cm²?V^?1?s^?1 was achieved for the 5?at.% Ta-doped SnO₂ film and the minimum resistivity as low as 2.5?×?10^?4?Ω?cm was obtained at 6?at.% of Ta-doping. In the visible region, all the obtained films had average transmittances exceeding 87%. As the Ta concentration increased from 0 to 8?at.%, the optical band gap of the films rose from 3.89 to 4.32?eV. The room temperature PL spectra of Ta-doped SnO₂ films showed intense green emission, weak violet and yellow emissions. The corresponding PL mechanisms were discussed.     

Improved electrical and optical properties in epitaxial Cd2SnO4 films

Epitaxial Cd₂SnO₄ films were fabricated on MgO(00l) single crystalline substrates by pulsed laser deposition technique at various substrate temperatures and growth oxygen pressures. The microstructure, transport, and optical properties of the films were studied in detail. High-resolution X-ray diffraction and high-resolution transmission electron microscopy results demonstrate that all the Cd₂SnO₄ films are grown epitaxially on MgO(00l) substrates. Atomic force microscope images indicate that the films have smooth surface morphologies. Hall-effect measurements reveal that the epitaxial film grown at 680^°C and 40 Pa presents the minimum resistivity value of 0.61 mΩcm and maximal Hall mobility of 32.87 cm² V⁻¹ s⁻¹. The metal–semiconductor transitions of Cd₂SnO₄ films were observed and explained by competitive effects of two conductive mechanisms. The optical transmittance of the Cd₂SnO₄ films is higher than 75% in the visible and near-infrared range, and the optical bandgap was determined to be about 3.09 eV for the film grown at optimal condition. The band structure and density of states of the Cd₂SnO₄ were calculated by the density functional theory.     

Structural,electrical and optical properties of molybdenum-doped TiO2 thin films

Molybdenum doped TiO₂ (MTO) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature and followed by a heat treatment in a reductive atmosphere containing 90% N₂ and 10% H₂. XRD and FESEM were employed to evaluate the microstructure of the MTO films, revealing that the addition of molybdenum enhances the crystallization and increases the grain size of TiO₂ films. The optimal electrical properties of the MTO films were obtained with 3 wt% Mo doping, producing a resistivity of 1.1×10^?3 Ω cm, a carrier density of 9.7×10²⁰ cm^?3 and a mobility of 5.9 cm²/Vs. The refractive index and extinction coefficient of MTO films were also measured as a function of film porosity. The optical band gap of the MTO films ranged from 3.28 to 3.36 eV, which is greater than that of the un-doped TiO₂ film. This blue shift of approximately 0.14 eV was attributed to the Burstein–Moss effect.     

High-performance indium-free flexible transparent ATO/Au/ATO tri-layer films by magnetron sputtering

Due to the scarcity of indium (In) in the earth and its potential harm to individuals, the development of In-free transparent conductive film is considered crucial. In this work, In-free SnO₂:Sb/Au/SnO₂:Sb (ATO/Au/ATO, SAS) tri-layer films with high transparency and conductivity were successfully prepared on polycarbonate (PC) substrates by RF and DC magnetron sputtering at room temperature. The influence of the Au layer thickness on microstructure, electrical and optical performances was systematically studied after fixing the ATO thickness to 50 nm. It was indicated by X-ray diffraction patterns that ATO is amorphous and Au is oriented along (111). The trend of increasing and then decreasing light transmission with Au layer thickness was observed in both experimental and simulation results. The improved figure of merit (FoM, 1.89 × 10^?2 Ω^?1) was achieved in SAS tri-layer film, the resistivity and average transmittance of which was lowered to 7.50 × 10^?5 Ω cm and 81.4%, respectively, when Au layer thickness is 11 nm. Moreover, the mechanism of the variation of optical and electrical properties at different Au layer thickness was proposed. Particularly, the SAS tri-layer films also exhibit superior flexibility, durability and adhesion. These results demonstrate SAS tri-layer films are promising alternative to ITO in flexible electronics applications.     

Strain effects in epitaxial La-doped SrSnO3 films on lattice-matched PMN-PT substrates

Here we report the effect of the strain states on the structure, optical and electrical transport properties of the La_0.05Sr_0.95SnO₃ (LSSO) thin films grown epitaxially on (001)-oriented 0.70 Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ (PMN-PT) substrates by pulsed laser deposition. X-ray diffraction results indicate that the films are fully strained up to at least 100 nm thickness, and the in-plane compressive strain gradually releases in thicker films. High-resolution transmission electron microscopy characterizations demonstrate that the LSSO films were grown coherently on PMN-PT(001) substrates. With varying the thicknesses of the fully strained films from 20 to 100 nm, the electrical transport properties are improved significantly. A lowest room-temperature resistivity of 1.88 mΩcm and the highest mobility of 28.1 cm²/Vs are obtained in the 100 nm film. The optical band gap determined from spectroscopic ellipsometry is found to increase from 4.58 to 4.88 eV with the film thicknesses varying from 20 to 500 nm. The results imply that the LSSO epitaxial films exhibit tunable electrical performances and optical band gaps through strain, which may have potential applications in optoelectrical devices.     

Synthesis and characterization of Sb–SnO2/kaolinites nanoparticles

In this paper, we reported the synthesis of composite conductive powders of antimony-doped tin oxide (Sb–SnO₂) coated onto kaolinite. Structure and morphology of the samples were systematically characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), Fourier transform infrared (FTIR) and X-ray photoelectron spectrum (XPS). The results showed that Sb–SnO₂ nanoparticles (< 10 nm) were successfully coated as thin layers on the surface of kaolinite. The antimony-doped tin oxide/kaolinite (ATK) composites retained the flake morphology like the original kaolinite and had a resistivity of 273.2 Ω·cm. Sb–SnO₂ layers were proved to attach to the kaolinite surface via the Sn–O–Si or Sn–O–Al bonds. The growth mode of Sb–SnO₂ layers onto the kaolinite was investigated.     

Effect of silver (Ag) ions irradiation on the structural,optical and photovoltaic properties of Mn doped TiO2 thin films based dye sensitized solar cells

Dye sensitized solar cell (DSSC) is an emerging energy harvesting tool which converts direct sunlight into electrical energy. These cells have much better properties in contrast with silicon based solar cells because of their flexible nature, light weight, low cost, environment friendly nature, and involvement of a simple manufacturing process. Since, a photoanode is the backbone of DSSC, we synthesized a pure and 1% manganese (Mn) doped titanium dioxide (TiO₂) films by sol-gel method which are irradiated with silver (Ag) ions at two different concentrations (2 × 10¹⁴ and 4 × 10¹⁴) ions-cm^?2. X-ray diffraction revealed that Mn doping followed by Ag irradiation transformed TiO₂ from pure anatase to rutile phase. Ultraviolet–visible spectroscopy exposed the reduction in band gap of TiO₂ film during this doping and irradiation process. Therefore, absorption is enhanced with red shift in UV-range. When these films are used as a photoanode in DSSC, 1% Mn doped TiO₂ film exposed with Ag at the concentration of (2 × 10¹⁴) ions-cm^?2 exhibited maximum efficiency of 2.40%.     

A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon–tin oxide by atomic layer deposition

SiO₂ and SnO₂ films were deposited using plasma-enhanced atomic layer deposition (PEALD) at low temperature (100 °C), and homogeneously mixed structure (HMS) films consisting of Si, Sn, and O were deposited through a “1st precursor dose – 2nd precursor dose – oxidation”, a new ALD process method for mixing two elements. For a deep consideration of the growth mechanism during the HMS film deposition process, density functional theory (DFT) calculations of the adsorption reactions of the precursors on the surface were conducted. The properties of the thin films such as density, atomic composition, crystallinity, surface roughness, optical transmittance and the water vapor diffusion barrier property were analyzed by XRR, XPS, XRD, AFM, UV-VIS and the electrical Ca test.By changing the dose sequence of the two precursors in the HMS process, various physical/chemical characteristics of the films could be controlled. Also, by adjusting the appropriate amount of Sn in the HMS films, the shortcomings of SnO₂ were compensated by the mixed SiO₂; and through this process, excellent gas diffusion barrier properties of WVTR ∼ 1.33 × 10⁻⁴ g/m²day were secured.     

Structural,electrical, and optical properties of Sb-doped SnO2 transparent conductive oxides fabricated using an electrospray technique

Sb-doped SnO₂ (ATO) thin films, for use as transparent conductive oxides (TCOs), were synthesized using an electrospray technique, and their structural, electrical, and optical properties were investigated. To elucidate the optimum fabrication conditions for the best electrical and optical properties, ATO thin films were calcined using four different temperatures, 450 °C, 550 °C, 650 °C, and 750 °C. When calcined at 650 °C, ATO thin films exhibit excellent resistivity (~8.14×10⁻³ Ω cm), superior transmittance (~91.4% at 550 nm), and good figure of merit (~11.4×10⁻⁴ Ω⁻¹) compared to the other samples. The enhanced properties of ATO thin films are attributed to high densification without formation of cracks, and the increased grain size of ATO nanoparticles.     

Improved Crystal Quality of Transparent Conductive Ga‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation

This study investigates the enhanced structural, and optoelectronic properties of transparent conductive Ga‐doped Mg_xZn_{1 ? x}O (GMZO) thin films with a varied magnesium (Mg) composition of 2% and 8%, respectively. The X‐ray diffraction (XRD) measurements revealed that GMZO with an 8% Mg composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% Mg composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed GMZO thin films were also observed in XRD and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved GMZO thin‐film quality, and the oxygen vacancy signal was found to decrease with increased Mg content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10^?4 Ω·cm in Ga‐doped Mg_xZn_{1 ? x}O (x = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.     

Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis

Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10⁻⁴ Ω cm.     

Enhanced electrical properties of In-Ga-Sn-O thin films at low-temperature annealing

Electrical and optical properties of In-Ga-Sn-O (IGTO) thin films deposited by radio-frequency magnetron sputtering were investigated according to annealing temperatures. While IGTO films remained an amorphous phase even after a heat treatment at temperature up to 500 °C, Hall measurements showed that annealing temperature had a significant impact on electrical properties of IGTO thin films. After investigating a wide range of annealing temperatures for samples from as-deposited state to 500 °C, IGTO film annealed at 200 °C exhibited the best electrical performance with a conductivity of 229.31 Ω^?1cm^?1, a Hall mobility of 36.89 cm²V^?1s^?1, and a carrier concentration of 3.85 × 10¹⁹ cm^?3. Changes in proportions of oxygen-related defects and percentages of Sn²⁺ and Sn⁴⁺ ions within IGTO films according to annealing temperatures were analyzed with X-ray photoelectron spectroscopy to determine the cause of the superb performance of IGTO at a low temperature. In IGTO films annealed at 200 °C, Sn⁴⁺ ions acting as donor defects accounted for a high percentage, whereas hydroxyl groups working as electron traps showed a significantly reduced percentage compared to the as-deposited film. Optical band gaps of IGTO films obtained from UV–visible spectrum were 3.38–3.47 eV. The largest band gap value of 3.47 eV for the IGTO film annealed at 200 °C could be attributed to an increase in Fermi-level due to an increase of carrier concentration in the conduction band. These spectroscopic results well matched with electrical properties of IGTO films according to annealing temperatures. Excellent electrical properties of IGTO thin films annealed at 200 °C could be largely due to Sn donors besides oxygen vacancies, resulting in a significant increase in free carriers despite a low annealing. temperature.     

Four-phases characterization of synthesised CeO2 thin films: Effect of molarity on structural,optical, physical properties and gamma-ray attenuation parameters

A group of novel CeO₂ thin films were synthesised using ultrasonic spray pyrolysis process. The composition ratios of these films were modified to investigate changes in their optical, surface, electrical, and structural characteristics. Absorbance spectra in the range 300–900 nm was acquired. Transmittance in the visible area was determined to be 50%. The optical band gap was reported to vary between 3.38 and 3.52eV using absorbance spectra. X-ray diffraction was used to analyse the films' structure, while atomic force microscopy was used to determine the surface roughness values. Spectroscopic ellipsometry and the Cauchy–Urbach model were used to calculate the thicknesses. Electrical resistivity values were determined using a four-probe system. CeO₂ thin film X-ray diffraction patterns validated the polycrystalline cubic fluorite structure. According to the data, the deposited films expand preferentially in the (2 0 0) direction. The films were found to have a high resistivity of 10⁶ Ω cm. We also evaluated the nuclear radiation shielding properties of CeO₂ thin films in the 0.015–15 MeV photon energy range. The results indicated that CeO₂ thin film exhibits promising half value layers of 0.00169 cm, 0.14055 cm, 1.62665 cm, and 2.30273 cm, respectively, for 0.015 MeV, 0.15 MeV, 1 MeV, and 15 MeV CeO₂ films have been determined to be worth working on and may be promising materials for optoelectronic and nuclear security applications.